Fairchild FQP2N60C, FQPF2N60C service manual
FQP2N60C/FQPF2N60C
2.0A, 600V N-Channel MOSFET
FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET
April 2006
®
QFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
G
D
S
TO-220
FQP Series
Absolute Maximum Ratings T
Symbol Parameter FQP2N60C FQPF2N60C Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
TJ, T
STG
T
L
* Drain current limited by maximum junction temperature.
Drain-Source Voltage 600 V
Drain Current
Drain Current - Pulsed
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TC = 25°C)
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8∀ from case for 5 seconds
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Derate above 25°C 0.43 0.18 W/°C
D
G
= 25°C unless otherwise noted
C
Features
•r
• Low gate charge (typical 8.5 nC)
• Low Crss (typical 4.3 pF)
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
= 4.7Ω @ VGS = 10 V
DS(on)
TO-220F
FQPF Series
2.0 2.0 * A
1.35 1.35 * A
54 23 W
8 8 * A
D
G
S
120 mJ
2.0 A
5.4 mJ
4.5 V/ns
300 °C
Thermal Characteristics
Symbol Parameter FQP2N60C FQPF2N60C Units
R
θJC
R
θCS
R
θJA
©2006 Fairchild Semiconductor Corporation
FQP2N60C/FQPF2N60C, Rev. A1
Thermal Resistance, Junction-to-Case 2.32 5.5 °C/W
Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W
Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
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FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
ΔBV
DSS
/ ΔT
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 μA
ID = 250 μA, Referenced to 25°C
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
600 -- -- V
-- 0.6 -- V/°C
-- -- 1 μA
-- -- 10 μA
-- -- 100 nA
-- -- -100 nA
On Characteristics
V
GS(th)
r
DS(on)
g
FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 1 A
VDS = 40 V, ID = 1 A (Note 4)
2.0 -- 4.0 V
-- 3.6 4.7 Ω
-- 5.0 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance -- 20 25 pF
Reverse Transfer Capacitance -- 4.3 5.6 pF
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 180 235 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time -- 25 60 ns
VDD = 300 V, ID = 2 A,
RG = 25 Ω
-- 9 28 ns
Turn-Off Delay Time -- 24 58 ns
Turn-Off Fall Time -- 28 66 ns
Total Gate Charge
Gate-Source Charge -- 1.3 -- nC
Gate-Drain Charge -- 4.1 -- nC
(N ote 4, 5)
VDS = 480 V, ID = 2 A,
VGS = 10 V
(N ote 4, 5)
-- 8.5 12 nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 56mH, IAS = 2A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 2A, di/dt ≤ 200A/μs, VDD ≤ BV
4. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
FQP2N60C/FQPF2N60C, Rev. A1
Maximum Continuous Drain-Source Diode Forward Current -- -- 2 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 8 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 1.0 -- μC
Starting TJ = 25°C
DSS,
VGS = 0 V, IS = 2 A
VGS = 0 V, IS = 2 A,
dIF / dt = 100 A/μs (Not e 4)
-- -- 1.4 V
-- 230 -- ns
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Typical Characteristics
FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
0
10
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
-1
10
, Drain Current [A]
D
I
-2
10
-1
10
0
10
Notes :
1. 250us Pulse Test
2. T
= 25oC
C
1
10
VDS, Drain-Sour ce Voltage [V]
12
10
8
6
[Ohm],
DS(ON)
r
4
2
Drain-Source On-Resistance
0
012345
VGS = 10V
VGS = 20V
Note : TJ = 25oC
ID, Drain Curr ent [A]
1
10
150oC
0
10
25oC
, Drain Current [A]
D
I
-1
10
246810
-55oC
Notes :
= 40V
1. V
DS
2. 250us Pulse Test
VGS, Gate-Source Voltage [V]
Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics
0
10
150oC
, Reverse Drain Current [A]
DR
I
-1
10
0.2 0. 4 0.6 0.8 1.0 1.2 1.4
25oC
Notes :
= 0V
1. V
GS
2. 250us Pulse Te st
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
500
450
400
350
300
250
200
150
Capacitances [pF]
100
50
0
-1
10
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FQP2N60C/FQPF2N60C, Rev. A1
C
= Cgs + Cgd (Cds = shorted)
iss
C
oss
C
= C
rss
C
iss
C
oss
C
rss
0
10
VDS, Drain-Source Volt age [V]
= Cds + C
gd
10
gd
1
Note ;
1. V
= 0 V
GS
2. f = 1 MHz
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
VDS = 300V
8
6
4
, Gate-Source Voltage [V]
2
GS
V
0
0246810
VDS = 480V
QG, Total Gate Charge [nC]
VDS = 120V
Note : ID = 2A
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