Fairchild FQP27P06 service manual

FQP27P06

60V P-Channel MOSFET

FQP27P06

May 2001

TM

QFET

General Description

These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as automotive,

Features

• -27A, -60V, R

• Low gate charge ( typical 33 nC)

• Low Crss ( typical 120 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

= 0.07Ω @VGS = -10 V

DS(on)

DC/DC converters, and high efficiency switching fo r power
management in portable and battery operated products.

S

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D

G

SD

TO-220

FQP Series

Absolute Maximum Ratings T

= 25°C unless otherwise noted

C

G

!!!!

!!!!

Symbol Parameter FQP27P06 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

Drain-Source Voltage -60 V
Drain Current

- Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

-27 A

-19.1 A

-108 A
Gate-Source Voltage ± 25 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

560 mJ

-27 A
12 mJ

-7.0 V/ns
120 W

- Derate above 25°C 0.8 W/°C

T

, T

J

STG

T

L

Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θCS

R

θJA

©2001 Fairchild Semiconductor Corporation Rev. A2. May 2001

Thermal Resistance, Junction-to-Case -- 1.25 °C/W
Thermal Resistance, Case-to-Sink 0.5 -- °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

FQP27P06

Elerical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Te st Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = -250 µA

V

GS

I

= -250 µA, Referenced to 25°C

D

V

= -60 V, VGS = 0 V

DS

V

= -48 V, TC = 150°C

DS

V

= -25 V, VDS = 0 V

GS

= 25 V, VDS = 0 V

V

GS

-60 -- -- V

-- -0.06 -- V/°C

-- -- -1 µA

-- -- -10 µA

-- -- -100 nA

-- -- 100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = -250 µA

DS

= -10 V, ID = -13.5 A

V

GS

= -30 V, ID = -13.5 A

V

DS

(Note 4)

-2.0 -- -4.0 V

-- 0.055 0.07 Ω

-- 12.4 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 510 660 pF
Reverse Transfer Capacitance -- 120 155 pF

= -25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 1100 1400 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 185 380 ns
Turn-Off Delay Time -- 30 70 n s
Turn-Off Fall Time -- 90 190 ns
Total Gate Charge
Gate-Source Charge -- 6.8 -- nC
Gate-Drain Charge -- 18 -- nC

= -30 V, ID = -13.5 A,

V

DD

= 25 Ω

R

G

V

= -48 V, ID = -27 A,

DS

V

GS

= -10 V

(Note 4, 5)

(Note 4, 5)

-- 18 45 ns

-- 33 43 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 0.9mH, IAS = -27A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ -27A, di/dt ≤ 300A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Maximum Continuous Drain-Source Diode Forward Current -- -- -27 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- -108 A

= 0 V, IS = -27 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 0.41 -- µC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = -27 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- -4.0 V

-- 105 -- ns

(Note 4)

Rev. A2. May 2001©2001 Fairchild Semiconductor Corporation

Typical Characteristics

FQP27P06

10

10

, Drain Current [A]

D

-I

10

2

V
Top : - 1 5.0 V

- 10.0 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

1

Bottom : - 4.5 V

0

-1

10

GS

※

1. 250μs Pulse Test

2. T

0

10

-VDS, Drain-Source Voltage [V]

0.24

0.20

0.16

],

Ω

[

0.12

DS(on)

R

0.08

Drain-Source On-Resistance

0.04

0.00
0 10 20 30 40 50 60 70 80 90 100 110 120 130

VGS = - 10V

VGS = - 20V

-ID , Drain Curren t [A ]

Notes :

C

※

Note : T

= 25

2

10

1

10

℃

175

℃

25

0

10

, Drain Current [A]

D

-I

℃

1

10

-1

10

246810

℃

-55

※

Notes :

1. V

= -30V

DS

2. 250μs Pulse Test

-VGS , Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

※

Notes :

= 0V

1. V

GS

2. 250μs Pulse Test

= 25

J

2

10

1

10

0

10

℃

175

℃

, Reve rs e D ra in Current [A ]

℃

DR

-I

-1

10

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8

25

-VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variati on vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

3000

2500

2000

1500

1000

Capacitance [pF]

500

0

-1

10

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

gd

C

oss

C

iss

C

rss

0

10

10

1

※

Notes :

1. V

= 0 V

GS

2. f = 1 MHz

12

10

8

6

4

, Gate-Source Voltage [V]

GS

2

-V

0

0 5 10 15 20 25 30 35

VDS, Drain-Source Voltage [V]

VDS = -30V

VDS = -48V

QG, Tota l Gate Charge [n C]

※

Note : I

= -27 A

D

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics

©2001 Fairchild Semiconductor Corporation Rev. A2. May 2001