Fairchild FQP15P12, FQPF15P12 service manual
现货库存、技术资料、百科信息、热点资讯，精彩尽在鼎好!
FQP15P12/FQPF15P12
120V P-Channel MOSFET
FQP15P12/FQPF15P12
®
QFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
Features
• -15A, -120V, R
• Low gate charge ( typical 29 nC)
• Low Crss ( typical 110 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
= 0.2Ω @VGS = -10 V
DS(on)
high efficiency switching DC/DC converters, and DC motor
control.
S
!!!!
!!!!
!!!!
!!!!
!!!!
!!!!
####
####
""""
""""
!!!!
!!!!
!!!!
!!!!
D
G
D
S
TO-220
FQP Series
Absolute Maximum Ratings T
GSD
= 25°C unless otherwise noted
C
TO-220F
FQPF Series
G
!!!!
!!!!
Symbol Parameter FQP15P12 FQPF15P12 Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
Drain-Source Voltage -120 V
Drain Current
- Continuous (T
- Continuous (T
Drain Current - Pulsed
= 25°C)
C
= 100°C)
C
(Note 1)
-15 -15 * A
-10.6 -10.6 * A
-60 -60 * A
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TC = 25°C)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
1157 mJ
-15 A
10 mJ
-5.0 V/ns
100 41 W
- Derate above 25°C 0.67 0.27 W/°C
T
, T
J
STG
T
L
* Drain current limited by maximum junction temperature.
Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Thermal Characteristics
Symbol Parameter FQP15P12 FQPF15P12 Units
R
θJC
R
θJS
R
θJA
©2003 Fairchild Semiconductor Corporation Rev. A, December 2003
Thermal Resistance, Junction-to-Case 1.5 3.66 °C/W
Thermal Resistance, Case-to-Sink Typ. 40 -- °C/W
Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
FQP15P12/FQPF15P12
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
/ ∆T
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
DSS
Coefficient
J
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
= 0 V, ID = 250 µA
V
GS
I
= -250 µA, Referenced to 25°C
D
V
= -120 V, VGS = 0 V
DS
V
= -96 V, TC = 150°C
DS
V
= -30 V, VDS = 0 V
GS
= 30 V, VDS = 0 V
V
GS
-120
-- -- V
-- -0.13 -- V/°C
-- -- -1 µA
-- -- -10 µA
-- -- -100 nA
-- -- 100 nA
On Characteristics
V
R
g
FS
GS(th)
DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
= VGS, ID = -250 µA
DS
= -10 V, ID = -7.5 A
V
GS
= -40 V, ID = -7.5 A
V
DS
(Note 4)
-2.0 -- -4.0 V
-- 0.17 0.2 Ω
-- 9.5 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance -- 310 400 pF
Reverse Transfer Capacitance -- 110 140 pF
= -25 V, VGS = 0 V,
V
DS
f = 1.0 MHz
-- 850 1100 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time -- 100 210 ns
Turn-Off Delay Time -- 80 170 ns
Turn-Off Fall Time -- 8 0 170 ns
Total Gate Charge
Gate-Source Charge -- 5.1 -- nC
Gate-Drain Charge -- 15 -- nC
= -60 V, ID = -15 A,
V
DD
= 25 Ω
R
G
(Note 4, 5)
V
= -96 V, ID = -15 A,
DS
V
GS
(Note 4, 5)
= -10 V
-- 15 40 ns
-- 29 38 nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 6.0mH, IAS = -15A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ -15A, di/dt ≤ 300A/µs, VDD ≤ BV
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Maximum Continuous Drain-Source Diode Forward Current -- -- -15 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- -60 A
= 0 V, IS = -15 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 0.61 -- µC
Starting TJ = 25°C
DSS,
V
GS
= 0 V, IS = -15 A,
V
GS
/ dt = 100 A/µs
dI
F
(Note 4)
-- -- -4.0 V
-- 126 -- ns
Rev. A, December 2003©2003 Fairchild Semiconductor Corporation
Typical Characteristics
FQP15P12/FQPF15P12
2
10
V
GS
Top : -15 .0 V
-10.0 V
-8.0 V
-7.0 V
-6.0 V
-5.5 V
1
10
-5.0 V
Botto m : -4.5 V
0
10
, Drain Current [A]
D
-I
-1
10
-1
10
0
10
$
Notes :
1. 250%s Pulse Test
&
2. TC = 25
1
10
-VDS, Drain -S o urce V o lta g e [V]
1.0
0.9
0.8
0.7
],
0.6
'
[
0.5
DS(ON)
0.4
R
0.3
0.2
Drain-Source On-Resistance
0.1
0.0
0 204060
VGS = -10V
$
VGS = -20V
Note : T
&
= 25
J
-ID, Drain C urrent [A ]
2
10
1
10
175oC
25oC
0
10
, Drain Current [A]
D
-I
-1
10
246810
-55oC
$
Notes :
1. V
= -40V
DS
2. 250%s Pulse Test
-VGS, Gate-Source Voltage [V]
Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s
1
10
&
&
175
0
10
, Reverse Drain Current [A]
DR
-I
-1
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
25
$
Notes :
1. V
= 0V
GS
2. 250%s Pulse Test
-VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
VDS = -30V
$
Note : I
2200
2000
1800
1600
1400
1200
1000
800
Capacitance [pF]
600
400
200
0
10
C
oss
C
iss
C
-1
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
gd
C
= C
rss
gd
$
Notes ;
1. V
= 0 V
GS
2. f = 1 MHz
rss
0
10
1
10
-VDS, Drain-Source Voltage [V]
12
10
VDS = -60V
8
VDS = -96V
6
4
, Ga te -S o u rc e V o lta g e [V]
2
GS
-V
0
0 10203040
QG, Tot al Ga te C h ar g e [n C]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Ch a ra ct eristics
= -15A
D
Rev. A, December 2003©2003 Fairchild Semiconductor Corporation
Loading...