Fairchild FQP13N50CF service manual
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FQP13N50CF / FQPF13N50CF
500V N-Channel MOSFET
FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET
May 2006
TM
FRFET
Features
• 13A, 500V, R
• Low gate charge (typical 43 nC)
• Low Crss (typical 20pF)
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Fast recovery body diode (typical 100ns)
G
= 0.54Ω @VGS = 10 V
DS(on)
D
S
TO-220
FDP Series
GSD
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor
correction.
D
G
TO-220F
FQPF Series
S
Absolute Maximum Ratings
Symbol Parameter FQP13N50CF FQPF13N50CF Unit
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
T
J, TSTG
T
L
*Drain current limited by maximum junction temperature
Drain-Source Voltage 500 V
Drain Current - Continuous (TC = 25°C) 13 13* A
- Continuous (T
Drain Current - Pulsed
Gate-Source voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TC = 25°C) 195 48 W
- Derate above 25°C1.560.39W/°C
Operating and Storage Temperature Range -55 to +150 °C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
= 100°C)
C
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
88*
52 52*
530 mJ
13 A
19.5 mJ
4.5 V/ns
300 °C
A
A
Thermal Characteristics
Symbol Parameter FQP13N50CF FQPF13N50CF Unit
R
θJC
R
θJA
© 2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FQP13N50CF / FQPF13N50CF Rev. A1
Thermal Resistance, Junction-to-Case 0.64 2.58 °C/W
Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FQP13N50CF FQP13N50CF TO-220 - - 50
FQPF13N50CF FQPF13N50CF TO-220F - - 50
FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
/ ∆T
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 5.6mH, IAS = 13A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 13A, di/dt ≤ 200A/µs, VDD ≤ BV
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA, TJ = 25°C 500 -- -- V
Breakdown Voltage Temperature
DSS
J
Coefficient
I
= 250µA, Referenced to 25°C--0.5--V/°C
D
Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V -- -- 10 µA
= 400V, TC = 125°C -- -- 100 µA
V
DS
Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA
Gate Threshold Voltage VDS = VGS, ID = 250µA2.0--4.0V
Static Drain-Source
On-Resistance
Forward Transconductance VDS = 40V, ID = 6.5A
Input Capacitance VDS = 25V, VGS = 0V,
Output Capacitance -- 180 235 pF
V
= 10V, ID = 6.5A -- 0.43 0.54 Ω
GS
(Note 4)
-- 15 -- S
-- 1580 2055 pF
f = 1.0MHz
Reverse Transfer Capacitance -- 20 25 pF
Turn-O n Delay Time VDD = 250V, ID = 13A
R
= 25Ω
Turn-On Rise Time -- 100 210 ns
G
-- 25 60 ns
Turn-Off Delay Time -- 130 270 ns
Turn-Off Fall Time -- 100 210 ns
Total Gate Charge VDS = 400V, ID = 13A
V
= 10V
Gate-Source Charge -- 7.5 -- nC
GS
Gate-Drain Charge -- 18.5 -- nC
(Note 4, 5)
-- 43 56 nC
(Note 4, 5)
Maximum Continuous Drain-Source Diode Forward Current -- -- 13 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 52 A
Drain-Source Diode Forward Voltage VGS = 0V, IS = 13A -- -- 1.4 V
Reverse Recovery Time VGS = 0V, IS = 13A
dI
/dt =100A/µs (Note 4)
Reverse Recovery Charge -- 0.35 -- µC
Starting TJ = 25°C
DSS,
F
-- 100 160 ns
FQP13N50CF / FQPF13N50CF Rev. A1
2 www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET
-55oC
Notes :※
1. VDS = 40V
2. 250µ s Puls e Test
1
10
0
10
, Drain Current [A]
D
I
-1
10
10
V
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
-1
GS
0
10
VDS, Drai n-Source Voltage [ V]
Notes :※
1. 250µ s Pulse Test
= 25℃
2. T
C
1
10
1
10
150oC
25oC
0
10
, Drain Current [A]
D
I
-1
10
246810
VGS, Gate-Sour ce Voltage [V]
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
25℃
Notes :※
1. VGS = 0V
2. 250µ s Pu lse Test
1.5
[Ω ],
1.0
DS(ON)
R
Drain-Source On-Resistance
0.5
0 5 10 15 20 25 30 3 5
ID, Drai n Current [A]
VGS = 10V
VGS = 20V
Note : T※J = 25℃
1
10
0
10
, Reverse Drain Current [A]
DR
I
-1
10
0.2 0. 4 0.6 0.8 1.0 1. 2 1.4
150℃
VSD, Source-Drain vol tage [V]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
3000
2500
2000
1500
1000
Capacitance [pF]
500
0
-1
10
0
10
VDS, Drain-Source Vol tage [V]
FQP13N50CF / FQPF13N50CF Rev. A1
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
gd
C
= C
rss
gd
C
iss
C
oss
Notes ;※
1. VGS = 0 V
10
2. f = 1 MHz
1
C
rss
12
10
8
6
4
, Gate-Source Voltage [V]
GS
2
V
0
0 1020304050
QG, Total Gate Charge [nC]
3 www.fairchildsemi.com
VDS = 100V
VDS = 250V
VDS = 400V
Note : I※D = 13A
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