Fairchild FQP13N50, FQPF13N50 service manual

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FQP13N50/FQPF13N50

500V N-Channel MOSFET

FQP13N50/FQPF13N50

TM

QFET

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well

Features

• 12.5A, 500V, R

• Low gate charge ( typical 45 nC)

• Low Crss ( typical 25 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

= 0.43Ω @VGS = 10 V

DS(on)

suited for high efficiency switch mode power supply, power
factor correction, electronic lamp ballast based on half
bridge.

D

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S

G

SD

TO-220

FQP Series

Absolute Maximum Ratings T

D

G

S

= 25°C unless otherwise noted

C

TO-220F

FQPF Series

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!!!!

G

Symbol Parameter FQP13N50 FQPF13N50 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

Drain-Source Voltage 500 V
Drain Current

- Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

12.5 12.5 * A

7.9 7.9 * A
50 50 * A

Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

810 mJ

12.5 A
17 mJ

4.5 V/ns

170 56 W

- Derate above 25°C 1.35 0.45 W/°C

T

, T

J

STG

T

L

* Drain current limited by maximum junction temperature.

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter FQP13N50 FQPF13N50 Units

R

θJC

R

θCS

©2002 Fairchild Semiconductor Corporation Rev. B, September 2002

Thermal Resistance, Junction-to-Case 0.74 2.23 °C/W
Thermal Resistance, Case-to-Sink 0.5 -- °C/W

FQP13N50/FQPF13N50

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV
∆BV
/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 500 V, VGS = 0 V

DS

V

= 400 V, TC = 125°C

DS

V

= 30 V, VDS = 0 V

GS

= -30 V, VDS = 0 V

V

GS

500 -- -- V

-- 0.48 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V , ID = 6.25 A

V

GS

= 50 V, ID = 6.25 A

V

DS

(Note 4)

3.0 -- 5.0 V

-- 0.33 0.43 Ω

-- 10 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 245 320 pF
Reverse Transfer Capacitance -- 25 35 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 1800 2300 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 140 290 ns
Turn-Off Delay Time -- 100 210 n s
Turn-Off Fall Time -- 85 180 ns
Total Gate Charge
Gate-Source Charge -- 11 -- nC
Gate-Drain Charge -- 22 -- nC

= 250 V, ID = 13.4 A,

V

DD

= 25 Ω

R

G

V

= 400 V, ID = 13.4 A,

DS

V

GS

= 10 V

(Note 4, 5)

(Note 4, 5)

-- 40 90 ns

-- 45 60 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 9.3mH, IAS = 12.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 13.4A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2002 Fairchild Semiconductor Corporation

Maximum Continuous Drain-Source Diode Forward Current -- -- 12.5 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 50 A

= 0 V, IS = 12.5 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 2.6 -- µC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 13.4 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- 1.4 V

-- 290 -- ns

(Note 4)

Rev. B, September 2002

Typical Characteristics

FQP13N50/FQPF13N50

V

GS

Top : 15 V
10 V

8.0 V

7.0 V

6.5 V

1

6.0 V

10

Botto m : 5.5 V

0

, Dra in C u rre n t [A ]

D

10

I

$

Note s :

1. 250&s Pulse Test
= 25

2. T

C

-1

10

0

10

1

10

VDS , Drain-Source Voltage [V]

1.4

1.2

1.0

],

0.8

'

[

0.6

DS(ON)

R

0.4

Drain-Source On-Resistance

0.2

0.0
0 1020304050

VGS = 10V

VGS = 20V

$

Note : T

ID, Dra i n Curr ent [A ]

1

10

%

150

0

10

, Drain Current [A]

D

I

%

-1

10

246810

%

25

%

-55

$

Notes :

1. V

= 50V

DS

2. 250&s Pulse Test

VGS , Gate -S o urc e V o ltag e [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

1

10

0

10

, Reverse Drain Current [A]

DR

I

%

= 25

J

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

%

150

%

25

$

Note s :

= 0V

1. V

GS

2. 250&s Pulse Test

VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

VDS = 100V

VDS = 250V

VDS = 400V

$

Note : I

= 13.4 A

D

3500

3000

2500

2000

1500

Capacitance [pF]

1000

500

0

-1

10

VDS, Drain-Source Voltage [V]

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

gd

C

iss

C

oss

$

Note s :

1. V

= 0 V

GS

10

2. f = 1 MHz

1

C

rss

0

10

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 5 10 15 20 25 30 35 40 45 50

QG, Tota l Gate Cha rg e [nC ]

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Chara cteristics

©2002 Fairchild Semiconductor Corporation Rev. B, September 2002