Fairchild FQP12N60C, FQPF12N60C service manual
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FQP12N60C/FQPF12N60C
600V N-Channel MOSFET
FQP12N60C/FQPF12N60C
TM
QFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
Features
• 12A, 600V, R
• Low gate charge ( typical 48 nC)
• Low Crss ( typical 21 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
= 0.65Ω @VGS = 10 V
DS(on)
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
D
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S
G
SD
TO-220
FQP Series
Absolute Maximum Ratings T
D
G
S
= 25°C unless otherwise noted
C
TO-220F
FQPF Series
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!!!!
G
Symbol Parameter FQP12N60C FQPF12N60C Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
Drain-Source Voltage 600 V
Drain Current
- Continuous (T
- Continuous (T
Drain Current - Pulsed
= 25°C)
C
= 100°C)
C
(Note 1)
12 12 * A
7.4 7.4 * A
48 48 * A
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TC = 25°C)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
870 mJ
12 A
22.5 mJ
4.5 V/ns
225 51 W
- Derate above 25°C 1.78 0.41 W/°C
T
, T
J
STG
T
L
* Drain current limited by maximum junction temperature.
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Thermal Characteristics
Symbol Parameter FQP12N60C FQPF12N60C Units
R
θJC
R
θJS
R
θJA
©2003 Fairchild Semiconductor Corporation Rev. B, October 2003
Thermal Resistance, Junction-to-Case 0.56 2.43 °C/W
Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W
Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
FQP12N60C/FQPF12N60C
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
/ ∆T
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
= 0 V, ID = 250 µA
V
GS
I
= 250 µA, Referenced to 25°C
D
V
= 600 V, VGS = 0 V
DS
V
= 480 V, TC = 125°C
DS
V
= 30 V, VDS = 0 V
GS
= -30 V, VDS = 0 V
V
GS
600 -- -- V
-- 0.5 -- V/°C
-- -- 1 µA
-- -- 10 µA
-- -- 100 nA
-- -- -100 nA
On Characteristics
V
R
g
FS
GS(th)
DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
= VGS, ID = 250 µA
DS
= 10 V, ID = 6 A
V
GS
= 40 V, ID = 6 A
V
DS
(Note 4)
2.0 -- 4.0 V
-- 0.53 0.65 Ω
-- 13 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance -- 182 235 pF
Reverse Transfer Capacitance -- 21 28 pF
= 25 V, VGS = 0 V,
V
DS
f = 1.0 MHz
-- 1760 2290 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time -- 85 180 ns
Turn-Off Delay Time -- 155 120 ns
Turn-Off Fall Time -- 90 190 n s
Total Gate Charge
Gate-Source Charge -- 8.5 nC
Gate-Drain Charge -- 21 nC
= 300 V, ID = 12 A,
V
DD
= 25 Ω
R
G
(Note 4, 5)
V
= 400 V, ID = 12 A,
DS
V
GS
(Note 4, 5)
= 10 V
-- 30 70 ns
-- 48 63 nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 11mH, IAS = 12A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 12A, di/dt ≤ 200A/µs, VDD ≤ BV
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Maximum Continuous Drain-Source Diode Forward Current -- -- 12 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 48 A
= 0 V, IS = 12 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 4.9 -- µC
Starting TJ = 25°C
DSS,
V
GS
= 0 V, IS = 12 A,
V
GS
/ dt = 100 A/µs
dI
F
(Note 4)
-- -- 1.4 V
-- 420 -- ns
Rev. B, October 2003©2003 Fairchild Semiconductor Corporation
Typical Characteristics
FQP12N60C/FQPF12N60C
V
GS
Top : 15.0 V
10. 0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
1
Botto m : 4 .5 V
10
, Drain Current [A]
D
I
0
10
0
10
VDS, Drain-Source Voltage [V]
1.5
],
&
[
1.0
DS(ON)
R
Drain-Source On-Resistance
0.5
0 5 10 15 20 25 30 35
VGS = 10V
ID, Drain Current [A]
$
Note s :
1. 25 0's Pulse Test
%
2. TC = 25
1
10
VGS = 20V
$
Note : T
1
10
150oC
25oC
0
10
, Drain Current [A]
D
I
-1
10
246810
-55oC
$
Note s :
= 40V
1. V
DS
2. 250's Pulse Test
VGS, Gate-Source Voltage [V]
Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s
1
10
0
10
, Reverse Drain Current [A]
DR
%
= 25
J
I
-1
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4
%
150
$
Note s :
= 0V
%
25
1. V
GS
2. 250's Pulse T es t
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
3500
3000
2500
2000
1500
Capacitance [pF]
1000
500
0
-1
10
VDS, Drain-Source Voltage [V]
C
= Cgs + Cgd (Cds = shorted )
iss
C
= Cds + C
oss
gd
C
= C
rss
gd
C
iss
C
oss
$
Notes ;
= 0 V
1. V
GS
10
2. f = 1 MH z
1
C
rss
0
10
12
10
8
6
4
, Gate-Source Voltage [V]
GS
2
V
0
0 1020304050
QG, Tota l G a te C h a r ge [n C]
VDS = 300V
VDS = 480V
VDS = 120V
$
Note : I
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Ch a ra ct eristics
D
= 12A
Rev. B, October 2003©2003 Fairchild Semiconductor Corporation
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