Fairchild FQP11N40C, FQPF11N40C service manual
FQP11N40C/FQPF11N40C
400V N-Channel MOSFET
FQP11N40C/FQPF11N40C 400V N-Channel MOSFET
May 2008
®
QFET
Features
• 10.5 A, 400V, R
• Low gate charge ( typical 28 nC)
• Low Crss ( typical 85pF)
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability
= 0.5 Ω @VGS = 10 V
DS(on)
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi
ciency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
D
{
{
●
●
◀
◀
▲
▲
●
{
{
G
G
D
S
TO-220
FQP Series
D
G
S
TO-220F
FQPF Series
●
●
●
{
{
S
Absolute Maximum Ratings
Symbol Parameter FQP11N40C FQPF11N40C Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
TJ, T
STG
T
L
* Drain current limited by maximum junction temperature
Drain-Source Voltage 400 V
Drain Current - Continuous (TC = 25°C) 10.5 10.5 * A
- Continuous (TC = 100°C) 6.6 6.6 * A
Drain Current - Pulsed
(Note 1)
42 42 * A
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
(Note 2)
(Note 1)
(Note 1)
(Note 3)
360 mJ
11 A
13.5 mJ
4.5 V/ns
Power Dissipation (TC = 25°C) 135 44 W
- Derate above 25°C 1.07 0.35 W/°C
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
300 °C
1/8" from case for 5 seconds
-
Thermal Characteristics
Symbol Parameter FQP11N40C FQPF11N40C Units
R
θJC
R
θCS
R
θJA
©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FQP11N40C/FQPF11N40C Rev. C1
Thermal Resistance, Junction-to-Case 0.93 2.86 °C/W Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FQP11N40C FQP11N40C TO-220 -- -- 50
FQPF11N40C FQPF11N40C TO-220F -- -- 50
FQP11N40C/FQPF11N40C 400V N-Channel MOSFET
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
DSS
∆BV
∆T
J
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 5.7 mH, IAS = 10.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 10.5A, di/dt ≤ 200A/µs, VDD ≤ BV
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 400 -- -- V
/
Breakdown Voltage Temperature
DSS
Coefficient
ID = 250 µA, Referenced to 25°C -- 0.54 -- V/°C
Zero Gate Voltage Drain Current VDS = 400 V, VGS = 0 V -- -- 1 µA
VDS = 320 V, TC = 125°C -- -- 10 µA
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V
Static Drain-Source
VGS = 10 V, ID = 5.25 A -- 0.43 0.53 Ω
On-Resistance
Forward Transconductance VDS = 40 V, ID = 5.25 A (Note 4) -- 7.1 -- S
Input Capacitance VDS = 25 V, VGS = 0 V,
Output Capacitance -- 250 325 pF
Reverse Transfer Capacitance -- 85 110 pF
f = 1.0 MHz
Turn-On Delay Time VDD = 200 V, ID = 10.5 A,
Turn-On Rise Time -- 89 190 ns
RG = 25 Ω
-- 840 1090 pF
-- 14 40 ns
Turn-Off Del ay Time -- 81 170 ns
Turn-Off Fal l Time -- 81 170 ns
Total Gate Charge VDS = 320 V, ID = 10.5 A,
Gate-Source Charge -- 4 -- nC
VGS = 10 V
Gate-Drain Charge -- 15 -- nC
(Note 4, 5)
-- 28 35 nC
(Note 4, 5)
Maximum Continuous Drain-Source Diode Forward Current -- -- 10.5 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 42 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 10.5 A -- -- 1.4 V
Reverse Recovery Time
Reverse Recovery Charge
Starting TJ = 25°C
DSS,
VGS = 0 V, IS = 10.5 A,
dIF / dt = 100 A/µs (Note 4 )
-- 290 -- ns
-- 2.4 -- µC
FQP11N40C/FQPF11N40C Rev. C1
2 www.fairchildsemi.com
Typical Performance Characteristics
FQP11N40C/FQPF11N40C 400V N-Channel MOSFET
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
, Drain Current [A]
D
I
1
10
0
10
-1
10
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
0
10
VDS, Drain-Source Voltage [ V]
1
10
150°C
, Drain Current [A]
Notes :
µs Pulse Test
1. 250
2. T
= 25°C
C
1
10
I
25°C
0
10
D
-1
10
246810
VGS, Gate-Source Voltage [V]
-55°C
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
25°C
Notes :
1. V
2. 250
2.0
VGS = 10V
1.5
[Ω],
1.0
DS(ON)
R
Drain-Source On-Resistance
0.5
0 5 10 15 20 25 30 35 40
ID, Drain Curr ent [A]
VGS = 20V
Note : TJ = 25°C
1
10
0
10
150°C
, Reverse Drain Current [A]
DR
I
-1
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-Drai n voltage [ V]
Notes :
1. V
2. 250
= 0V
GS
µs Pulse Test
= 40V
DS
µs Pulse Test
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
2000
1800
1600
1400
1200
1000
800
600
Capacitance [pF]
400
200
0
-1
10
FQP11N40C/FQPF11N40C Rev. C1
0
10
VDS, Drain- Source Voltage [V]
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
gd
C
= C
rss
gd
C
iss
C
oss
C
rss
Notes ;
1. V
= 0 V
GS
2. f = 1 MHz
1
10
12
10
8
6
4
, Gate-Source Voltage [V]
2
GS
V
0
0 5 10 15 20 25 30
VDS = 100V
VDS = 250V
VDS = 400V
Note : ID = 10.5A
QG, Total Gate Charge [nC]
3 www.fairchildsemi.com
Loading...