Fairchild FQP10N50CF, FQPF10N50CF service manual

FQP10N50CF / FQPF10N50CF
500V N-Channel MOSFET

FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET

December 2006

TM

FRFET

Features

• 10A, 500V, R

• Low gate charge (typical 43 nC)

• Low Crss (typical 16pF)

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• Fast recovery body diode

G

= 0.61 Ω @VGS = 10 V

DS(on)

D

S

TO-220

FQP Series

GSD

Description

These N-Channel enhancement mode power field effect transis­tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.

This advanced technology has been especially tailored to mini­mize on-state resistance, provide superior switching perfor­mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi­cient switched mode power supplies and active power factor
correction.

D

G

TO-220F

FQPF Series

S

Absolute Maximum Ratings

Symbol Parameter FQP10N50CF FQPF10N50CF Unit

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt

P

D

T

J, TSTG

T

L

*Drain current limited by maximum junction temperature

Drain-Source Voltage 500 V

Drain Current - Continuous (TC = 25°C) 10 10* A

- Continuous (T

Drain Current - Pulsed
Gate-Source voltage ± 30 V

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Power Dissipation (TC = 25°C) 143 48 W

- Derate above 25°C1.140.38W/°C

Operating and Storage Temperature Range -55 to +150 °C

Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds

= 100°C)

C

(Note 1)

(Note 2)

(Note 1)

(Note 1)

(Note 3)

6.35 6.35*

40 40*

388 mJ

10 A

14.3 mJ

4.5 V/ns

300 °C

A

A

Thermal Characteristics

Symbol Parameter FQP10N50CF FQPF10N50CF Unit

R

θJC

R

θJA

© 2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FQP10N50CF / FQPF10N50CF Rev. A

Thermal Resistance, Junction-to-Case 0.87 2.58 °C/W

Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FQP10N50CF FQP10N50CF TO-220 - - 50

FQPF10N50CF FQPF10N50CF TO-220F - - 50

FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV
/ ∆T

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 7mH, IAS = 10A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 10A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA, TJ = 25°C 500 -- -- V

Breakdown Voltage Temperature

DSS

J

Coefficient

I

= 250µA, Referenced to 25°C--0.5--V/°C

D

Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V -- -- 10 µA

= 400V, TC = 125°C -- -- 100 µA

V

DS

Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA

Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250µA2.0--4.0V

Static Drain-Source
On-Resistance

Forward Transconductance VDS = 40V, ID = 5A

Input Capacitance VDS = 25V, VGS = 0V,

Output Capacitance -- 177 230 pF

V

= 10V, ID = 5A -- 0.5 0.61 Ω

GS

(Note 4)

-- 15 -- S

-- 1610 2096 pF

f = 1.0MHz

Reverse Transfer Capacitance -- 16 24 pF

Turn-O n Delay Time VDD = 250V, ID = 10A

R

= 25Ω

Turn-On Rise Time -- 80 170 ns

G

-- 29 67 ns

Turn-Off Delay Time -- 141 290 ns

Turn-Off Fall Time -- 80 165 ns

Total Gate Charge VDS = 400V, ID = 10A

V

= 10V

Gate-Source Charge -- 7.5 -- nC

GS

Gate-Drain Charge -- 18.5 -- nC

(Note 4, 5)

-- 43 56 nC

(Note 4, 5)

Maximum Continuous Drain-Source Diode Forward Current -- -- 10 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- 40 A

Drain-Source Diode Forward Voltage VGS = 0V, IS = 10A -- -- 1.4 V

Reverse Recovery Time VGS = 0V, IS = 10A

dI

/dt =100A/µs (Note 4)

Reverse Recovery Charge -- 0.1 -- µC

Starting TJ = 25°C

DSS,

F

-- 50 ns

FQP10N50CF / FQPF10N50CF Rev. A

2 www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET

-55oC

Notes :※

1. VDS = 40V

2. 250µ s Puls e Test

1

10

0

10

, Drain Current [A]

D

I

-1

10

10

V
Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V
Bottom : 4.5 V

-1

GS

0

10

VDS, Drai n-Source Voltage [ V]

Notes :※

1. 250µ s Pulse Test

= 25℃

2. T

C

1

10

1

10

150oC

25oC

0

10

, Drain Current [A]

D

I

-1

10

246810

VGS, Gate-Sour ce Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

25℃

Notes :※

1. VGS = 0V

2. 250µ s Pu lse Test

1.5

VGS = 10V

[Ω ],

1.0

DS(ON)

R

Drain-Source On-Resistance

0.5

0 5 10 15 20 25 30 3 5

ID, Drai n Current [A]

VGS = 20V

Note : T※J = 25℃

1

10

0

10

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0. 4 0.6 0.8 1.0 1. 2 1.4

150℃

VSD, Source-Drain vol tage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

4000

3000

2000

Capacitances [pF]

1000

0

-1

10

C

oss

C

iss

C

rss

10

VDS, Drain-Source Voltage [V]

FQP10N50CF / FQPF10N50CF Rev. A

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

gd

* Note :

= 0 V

1. V

GS

2. f = 1 MHz

0

1

10

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 1020304050

QG, Total Gate Charge [nC]

3 www.fairchildsemi.com

VDS = 100V

VDS = 250V

VDS = 400V

* Note : ID = 10A