Fairchild FQB9N50C, FQI9N50C service manual

FQB9N50C/FQI9N50C

500V N-Channel MOSFET

FQB9N50C/FQI9N50C

TM

QFET

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well

Features

• 9 A, 500V, R

• Low gate charge ( typical 28 nC)

• Low Crss ( typical 24 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

= 0.8 Ω @VGS = 10 V

DS(on)

suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.

D

!

!

!

!

"

"

"

"

"

"
"

"

!

!

S

D

GS

D2-PAK

FQB Series

Absolute Maximum Ratings T

I2-PAK

GSD

= 25°C unless otherwise noted

C

FQI Series

!

!

G

Symbol Parameter FQB9N50C/FQI9N50C Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

Drain-Source Voltage 500 V
Drain Current

- Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

9A

5.4 A
36 A

Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

360 mJ

9A

13.5 mJ

4.5 V/ns

135 W

- Derate above 25°C 1.07 W/°C

, T

T

J

STG

T

L

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300 °C

Thermal Charac teristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

R

θJA

©2009 Fairchild Semiconductor Corporation Rev. A, Jun 2009

Thermal Resistance, Junction-to-Case -- 0.93 °C/W
Thermal Resistance, Junction-to-Ambient * -- 40 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

FQB9N50C/FQI9N50C

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter T e s t Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

V

= 0 V, ID = 250 µA

GS

= 250 µA, Referenced to 25°C

I

D

V

= 500 V, VGS = 0 V

DS

= 400 V, TC = 125°C

V

DS

V

= 30 V, VDS = 0 V

GS

V

= -30 V, VDS = 0 V

GS

500 -- -- V

-- 0.57 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V, ID = 4.5 A

V

GS

V

= 40 V, ID = 4.5 A

DS

(Note 4)

2.0 -- 4.0 V

-- 0.65 0.8 Ω

-- 6.5 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 130 170 pF
Reverse Transfer Capacitance -- 24 30 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 790 1030 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 65 140 ns
Turn-Off Delay Time -- 93 195 ns
Turn-Off Fall Time -- 64 125 ns
Total Gate Charge
Gate-Source Charge -- 4 -- nC
Gate-Drain Charge -- 15 -- nC

V

= 250 V, ID = 9 A,

DD

R

= 25 Ω

G

(Note 4, 5)

V

= 400 V, ID = 9 A,

DS

V

GS

(Note 4, 5)

= 10 V

-- 18 45 ns

-- 28 35 nC

Drain-So urce Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 8 mH, IAS = 9A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 9A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Maximum Continuous Drain-Source Diode Forward Current -- -- 9 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 36 A

V

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 2.95 -- µC

Starting TJ = 25°C

DSS,

= 0 V, IS = 9 A

GS

= 0 V, IS = 9 A,

V

GS

dI

/ dt = 100 A/µs

F

(Note 4)

-- -- 1.4 V

-- 335 -- ns

Rev. A, Jun 2009©2009 Fairchild Semiconductor Corporation

Typical Characteristics

FQB9N50C/FQI9N50C

V

GS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

1

10

6.0 V

5.5 V

5.0 V
Bottom : 4.5 V

0

10

, Drain Current [A]

D

I

-1

10

-1

10

0

10

10

VDS, Drain-Source Voltage [V]

2.0

1.5

],

$

[

1.0

DS(ON)

R

Drain-Source On-Resistance

0.5

0 5 10 15 20 25

VGS = 10V

ID, Drain Current [A]

!

Notes :

1. 250#s Pulse Test

"

2. T

= 25

C

1

VGS = 20V

"

!

= 25

Note : T

J

1

10

150oC

25oC

0

10

, Drain Current [A]

D

I

-1

10

246810

-55oC

!

Notes :

= 40V

1. V

DS

2. 250#s Pulse Test

VGS, Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i st ics

1

10

0

10

"

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4

150

"

25

!

Notes :

= 0V

1. V

GS

2. 250#s Pulse Test

VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

2000

1600

1200

800

Capacitance [pF]

400

0

-1

10

VDS, Drain-Source Voltage [V]

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

gd

C

iss

C

oss

!

1

10

Notes ;

1. V

= 0 V

GS

2. f = 1 MHz

C

rss

0

10

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 5 10 15 20 25 30

QG, Tota l Gate Charge [ nC]

VDS = 100V

VDS = 250V

VDS = 400V

!

Note : I

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

= 9A

D

Rev. A, Jun 2009©2009 Fairchild Semiconductor Corporation