Fairchild FQB6N80, FQI6N80 service manual

FQB6N80 / FQI6N80

800V N-Channel MOSFET

October 2008

QFET

®

General Description

FQB6N80 / FQI6N80

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.

Features

• 5.8A, 800V, R

• Low gate charge ( typical 31 nC)

• Low Crss ( typical 14 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

RoHS Compliant

•

= 1.95Ω @VGS = 10 V

DS(on)

D

!

!

G

S

D2-PAK

FQB Series

G

Absolute Maximum Ratings

D

S

TC = 25°C unless otherwise noted

I2-PAK

FQI Series

G

Symbol Parameter FQB6N80 / FQI6N80 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

Drain-Source Voltage 800 V
Drain Current

- Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

5.8 A

3.67 A

23.2 A
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TA = 25°C) *
Power Dissipation (T

= 25°C)

C

(Note 2)
(Note 1)
(Note 1)
(Note 3)

680 mJ

5.8 A

15.8 mJ

4.0 V/ns

3.13 W

158 W

- Derate above 25°C 1.27 W/°C

, T

T

J

STG

T

L

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300 °C

D

!

!

"

"

5

5

3

3

"

"
"

"

!

!

S

Thermal Charac teristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

R

θJA

* When mounted on the minimum pad size recommended (PCB Mount)

©2008 Fairchild Semiconductor International Rev. A1, Oct 2008

Thermal Resistance, Junction-to-Case -- 0.79 °C/W
Thermal Resistance, Junction-to-Ambient * -- 40 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

FQB6N80 / FQI6N80

Electrical Characteristics

T

= 25°C unless otherwise noted

C

Symbol Parameter T e s t Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

V

= 0 V, ID = 250 µA

GS

= 250 µA, Referenced to 25°C

I

D

V

= 800 V, VGS = 0 V

DS

= 640 V, TC = 125°C

V

DS

V

= 30 V, VDS = 0 V

GS

V

= -30 V, VDS = 0 V

GS

800 -- -- V

-- 0.9 -- V/°C

-- -- 10 µA

-- -- 100 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V , ID = 2.9 A

V

GS

V

= 50 V, ID = 2.9 A

DS

(Note 4)

3.0 -- 5.0 V

-- 1.5 1.95 Ω

-- 5.9 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 125 160 pF
Reverse Transfer Capacitance -- 14 18 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 1150 1500 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 70 150 ns
Turn-Off Delay Time -- 65 14 0 n s
Turn-Off Fall Time -- 45 1 0 0 n s
Total Gate Charge
Gate-Source Charge -- 7.1 -- nC
Gate-Drain Charge -- 15 -- nC

V

= 400 V, ID = 5.8 A,

DD

R

= 25 Ω

G

V

= 640 V, ID = 5.8 A,

DS

V

GS

= 10 V

(Note 4, 5)

(Note 4, 5)

-- 30 7 0 ns

-- 31 nC

Drain-So urce Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 38mH, IAS = 5.8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 5.8A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2008 Fairchild Semiconductor International

Maximum Continuous Drain-Source Diode Forward Current -- -- 5.8 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 23.2 A

V

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 5.7 -- µC

Starting TJ = 25°C

DSS,

= 0 V, IS = 5.8 A

GS

= 0 V, IS = 5.8 A,

V

GS

dI

/ dt = 100 A/µs

F

-- -- 1.4 V

-- 650 -- ns

(Note 4)

Rev. A1, Oct 2008

Typical Characteristics

V

GS

Top : 15 .0 V

1

10.0 V

10

8.0 V

7.0 V

6.5 V

6.0 V
Botto m : 5.5 V

0

10

FQB6N80 / FQI6N80

, Drain Current [A]

D

I

-1

10

-1

10

0

10

VDS, Drain-Source Voltage [V]

※

Notes :

1. 250μs Pulse Tes t

℃

2. T

= 25

C

1

10

1

10

150oC

0

10

, Dra i n Current [A]

D

I

-1

10

246810

25oC

VGS, Gate-Source Voltage [V]

-55oC

※

Notes :

1. V

= 50V

DS

2. 250μs Pulse Tes t

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i st ics

4

3

],

Ω

[

2

DS(ON)

R

1

VGS = 10V

VGS = 20V

Drain-Source On-Resistance

※

0

0 4 8 12 16

ID, Drain Current [A]

Note : T

1

10

℃

= 25

J

0

10

℃

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2

150

VSD, Sou r c e-Drain voltage [V]

℃

25

※

Notes :

= 0V

1. V

GS

2. 250μs Pulse Test

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

2000
1800
1600
1400
1200

1000

800
600

Capacitance [pF]

400
200

0

-1

10

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

10

gd

1

※

Note s :

1. V

= 0 V

GS

2. f = 1 MHz

C

iss

C

oss

C

rss

0

10

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 5 10 15 20 25 30 35

VDS, Drain-Source Voltage [V]

VDS = 160V

VDS = 400V

VDS = 640V

QG, Tota l Gate Charge [n C]

※

Note : I

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

= 5.8A

D

Rev. A1, Oct 2008©2008 Fairchild Semiconductor International