Fairchild FQB55N10, FQI55N10 service manual

FQB55N10 / FQI55N10

100V N-Channel MOSFET

October 2008

QFET

®

General Description

These N-Channel enhancement mode power field effect

FQB55N10 / FQI55N10

transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor

Features

• 55A, 100V, R

• Low gate charge ( typical 75 nC)

• Low Crss ( typical 130 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

• RoHS Compliant

= 0.026Ω @VGS = 10 V

DS(on)

control.

D

!

!

G

S

D2-PAK

FQB Series

G

D

Absolute Maximum Ratings T

S

= 25°C unless otherwise noted

C

I2-PAK

FQI Series

G

Symbol Parameter FQB55N10 / FQI55N10 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

Drain-Source Voltage 100 V
Drain Current

- Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

55 A

38.9 A
220 A

Gate-Source Voltage ± 25 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TA = 25°C) *
Power Dissipation (T

= 25°C)

C

(Note 2)
(Note 1)
(Note 1)
(Note 3)

1100 mJ

55 A

15.5 mJ

6.0 V/ns

3.75 W
155 W

- Derate above 25°C 1.03 W/°C

, T

T

J

STG

T

L

Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300 °C

!

!

D

!

!

"

"

"

"

"

"
"

"

!

!

S

Thermal Charac teristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

R

θJA

* When mounted on the minimum pad size recommended (PCB Mount)

©2008 Fairchild Semiconductor International Rev. A1, Oct 2008

Thermal Resistance, Junction-to-Case -- 0.97 °C/W
Thermal Resistance, Junction-to-Ambient * -- 40 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

FQB55N10 / FQI55N10

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter T e s t Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

V

= 0 V, ID = 250 µA

GS

= 250 µA, Referenced to 25°C

I

D

V

= 100 V, VGS = 0 V

DS

= 80 V, TC = 150°C

V

DS

V

= 25 V, VDS = 0 V

GS

V

= -25 V, VDS = 0 V

GS

100 -- -- V

-- 0.1 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V, ID = 27.5 A

V

GS

V

= 40 V, ID = 27.5 A

DS

(Note 4)

2.0 -- 4.0 V

-- 0.021 0.026 Ω

-- 38 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 640 830 pF
Reverse Transfer Capacitance -- 130 170 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 2100 2730 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 250 510 ns
Turn-Off Delay Time -- 110 230 ns
Turn-Off Fall Time -- 140 290 n s
Total Gate Charge
Gate-Source Charge -- 13 -- nC
Gate-Drain Charge -- 36 -- nC

V

= 50 V, ID = 55 A,

DD

R

= 25 Ω

G

V

= 80 V, ID = 55 A,

DS

V

GS

= 10 V

(Note 4, 5)

(Note 4, 5)

-- 25 60 ns

-- 75 98 nC

Drain-So urce Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 0.55mH, IAS = 55A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 55A, di/dt ≤ 300A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2008 Fairchild Semiconductor International

Maximum Continuous Drain-Source Diode Forward Current -- -- 55 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 220 A

V

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 380 -- nC

Starting TJ = 25°C

DSS,

= 0 V, IS = 55 A

GS

= 0 V, IS = 55 A,

V

GS

dI

/ dt = 100 A/µs

F

-- -- 1.5 V

-- 100 -- ns

(Note 4)

Rev. A1, Oct 2008

Typical Characteristics

V

GS

Top : 15.0 V

2

10.0 V

10

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V
Bottom : 4.5 V

1

10

FQB55N10 / FQI55N10

, Drain Current [A]

D

I

0

10

-1

10

0

10

※

Notes :

1. 250μs Pulse Te st

℃

2. T

= 25

C

1

10

VDS, Drain - S ou r ce V o lta g e [V]

2

10

1

10

℃

175

℃

25

0

10

, Drain Current [A]

D

I

-1

10

246810

VGS, Gate-Source V oltage [V]

※

℃

-55

Notes :

1. V

= 40V

DS

2. 250μs Pulse Test

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i st ics

0.12

0.09

],

Ω

[

0.06

DS(on)

R

0.03

Drain-Source On-Resistance

0.00
0 60 120 180 240 300

VGS = 10V

VGS = 20V

ID , Drain Curren t [A ]

※

Note : T

2

10

1

10

0

10

℃

175

, Reverse Drain Current [A]

DR

℃

= 25

J

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

25

VSD, Sou r c e-Drain voltage [V]

℃

※

Notes :

1. V

= 0V

GS

2. 250μs Pulse Test

Figure 3. On-Resistance Variati on vs .

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

VDS = 50V

VDS = 80V

※

Note : I

6000

5000

4000

3000

2000

Capacitance [pF]

1000

0

-1

10

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

C

iss

C

oss

C

rss

0

10

10

1

※

Notes :

1. V

= 0 V

GS

2. f = 1 MH z

VDS, Drain-Source Voltage [V]

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 1020304050607080

QG, Tota l Gate Charge [n C]

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics

D

= 55A

Rev. A1, Oct 2008©2008 Fairchild Semiconductor International