Fairchild FQB50N06L, FQI50N06L service manual
FQB50N06L / FQI50N06L
FQB50N06L / FQI5 0N06L
60V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.
D
G
S
D2-PAK
FQB Series
G
D
S
October 2008
QFET
Features
• 52.4A, 60V, R
• Low gate charge ( typical 24.5 nC)
• Low Crss ( typical 90 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• RoHS Compliant
I2-PAK
FQI Series
= 0.021Ω @VGS = 10 V
DS(on)
!
!
G
!
!
D
!
!
"
"
"
"
"
"
"
"
!
!
S
®
Absolute Maximum Ratings T
= 25°C unless otherwise noted
C
Symbol Parameter FQB50N06L / FQI50N06L Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
Drain-Source Voltage 60 V
Drain Current
- Continuous (T
- Continuous (T
Drain Current - Pulsed
= 25°C)
C
= 100°C)
C
(Note 1)
52.4 A
37.1 A
210 A
Gate-Source Voltage ± 20 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TA = 25°C) *
Power Dissipation (T
= 25°C)
C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
990 mJ
52.4 A
12.1 mJ
7.0 V/ns
3.75 W
121 W
- Derate above 25°C 0.81 W/°C
, T
T
J
STG
T
L
Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Thermal Charac teristics
Symbol Parameter Typ Max Units
R
θJC
R
θJA
R
θJA
* When mounted on the minimum pad size recommended (PCB Mount)
Thermal Resistance, Junction-to-Case -- 1.24 °C/W
Thermal Resistance, Junction-to-Ambient * -- 40 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
©2008 Fairchild Semiconductor Corporation Rev. A2. Oct 2008
FQB50N06L / FQI50N06L
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter T e s t Conditions Min Typ Max Units
Off Characteristics
BV
∆BV
/ ∆T
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
DSS
Breakdown Voltage Temperature
DSS
Coefficient
J
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
= 0 V, ID = 250 µA
GS
= 250 µA, Referenced to 25°C
I
D
V
= 60 V, VGS = 0 V
DS
= 48 V, TC = 150°C
V
DS
V
= 20 V, VDS = 0 V
GS
V
= -20 V, VDS = 0 V
GS
60 -- -- V
-- 0.06 -- V/°C
-- -- 1 µA
-- -- 10 µA
-- -- 100 nA
-- -- -100 nA
On Characteristics
V
R
g
FS
GS(th)
DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
= VGS, ID = 250 µA
DS
V
= 10 V, ID = 26.2 A
GS
= 5 V, ID =26.2 A
V
GS
= 25 V, ID = 26.2 A
V
DS
(Note 4)
1.0 -- 2.5 V
----0.017
0.020
0.021
0.025
-- 40 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance -- 445 580 pF
Reverse Transfer Capacitance -- 90 120 pF
= 25 V, VGS = 0 V,
V
DS
f = 1.0 MHz
-- 1250 163 0 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time -- 380 770 ns
Turn-Off Delay Time -- 80 170 ns
Turn-Off Fall Time -- 145 3 0 0 n s
Total Gate Charge
Gate-Source Charge -- 6 -- nC
Gate-Drain Charge -- 14.5 -- nC
V
= 30 V, ID = 26.2 A,
DD
R
= 25 Ω
G
= 48 V, ID = 52.4 A,
V
DS
V
GS
= 5 V
(Note 4, 5)
(Note 4, 5)
-- 20 50 ns
-- 24.5 32 n C
Ω
Drain-So urce Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 300µH, IAS = 52.4A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 52.4A, di/dt ≤ 300A/µs, VDD ≤ BV
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Maximum Continuous Drain-Source Diode Forward Current -- -- 52.4 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 210 A
V
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 125 -- nC
Starting TJ = 25°C
DSS,
= 0 V, IS = 52.4 A
GS
= 0 V, IS = 52.4 A,
V
GS
dI
/ dt = 100 A/µs
F
-- -- 1.5 V
-- 65 -- ns
(Note 4)
Rev. A2. Oct 2008©2008 Fairchild Semiconductor Corporation
Typical Characteristics
FQB50N06L / FQI50N06L
],
$
[m
R
, Drain Current [A]
I
DS(ON)
2
10
1
10
D
0
10
10
60
50
40
30
20
V
Top : 10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Botto m : 3.0 V
-1
GS
10
VDS, Drain-Source Voltage [V]
VGS = 5V
!
Note s :
1. 250#s Pulse Test
"
2. T
= 25
C
0
VGS = 10V
2
10
1
10
1
10
"
175
, Drain Current [A]
D
I
"
25
"
-55
0
10
0246810
V
, Gate-Source Voltage [V]
GS
!
Note s :
1. V
= 25V
DS
2. 250#s Pulse Test
Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i st ics
2
10
1
10
10
Drain-Source On-Resistance
0
0 25 50 75 100 125 150 175 200
!
Note : T
= 25
J
ID, Drain Current [A]
Figure 3. On-Resistance Variati on vs .
Drain Current and Gate Voltage
"
, Reverse Drain Current [A]
DR
I
10
175
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
"
"
25
!
Note s :
1. V
2. 250#s Pulse Test
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
VDS = 30V
VDS = 48V
!
Capacitance [pF]
4000
3000
2000
1000
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
gd
C
= C
rss
gd
C
oss
C
iss
C
rss
0
-1
10
0
10
1
10
!
Notes :
1. V
= 0 V
GS
2. f = 1 M H z
VDS, Drain-Source Voltage [V]
12
10
8
6
4
2
, Gate-Source Voltage [V]
GS
V
0
0 1020304050
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
= 0V
GS
Note : I
= 52.4A
D
©2008 Fairchild Semiconductor Corporation Rev. A2. Oct 2008
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