Fairchild FQB34N20L, FQI34N20L service manual
FQB34N20L / FQI3 4N20L
200V LOGIC N-Channel MOSFET
October 2008
QFET
®
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
FQB34N20L / FQI34N20L
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supply, motor control.
Features
• 31A, 200V, R
• Low gate charge ( typical 55 nC)
• Low Crss ( typical 52 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct
opration from logic drivers
• RoHS Compliant
= 0.075Ω @VGS = 10 V
DS(on)
D
!
!
G
S
D2-PAK
FQB Series
G
D
Absolute Maximum Ratings T
S
= 25°C unless otherwise noted
C
I2-PAK
FQI Series
G
Symbol Parameter FQB34N20L / FQI34N20L Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
Drain-Source Voltage 200 V
Drain Current
- Continuous (T
- Continuous (T
Drain Current - Pulsed
= 25°C)
C
= 100°C)
C
(Note 1)
31 A
20 A
124 A
Gate-Source Voltage ± 20 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TA = 25°C) *
Power Dissipation (T
= 25°C)
C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
640 mJ
31 A
18 mJ
5.5 V/ns
3.13 W
180 W
- Derate above 25°C 1.43 W/°C
, T
T
J
STG
T
L
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300 °C
!
!
D
!
!
"
"
"
"
"
"
"
"
!
!
S
Thermal Charac teristics
Symbol Parameter Typ Max Units
R
θJC
R
θJA
R
θJA
* When mounted on the minimum pad size recommended (PCB Mount)
©2008 Fairchild Semiconductor International Rev. A1, Oct 2008
Thermal Resistance, Junction-to-Case -- 0.7 °C/W
Thermal Resistance, Junction-to-Ambient * -- 40 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
FQB34N20L / FQI34N20L
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter T e s t Conditions Min Typ Max Units
Off Characteristics
BV
∆BV
/ ∆T
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
DSS
Breakdown Voltage Temperature
DSS
Coefficient
J
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
= 0 V, ID = 250 µA
GS
= 250 µA, Referenced to 25°C
I
D
V
= 200 V, VGS = 0 V
DS
= 160 V, TC = 125°C
V
DS
V
= 20 V, VDS = 0 V
GS
V
= -20 V, VDS = 0 V
GS
200 -- -- V
-- 0.16 -- V/°C
-- -- 1 µA
-- -- 10 µA
-- -- 100 nA
-- -- -100 nA
On Characteristics
V
R
g
FS
GS(th)
DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
= VGS, ID = 250 µA
DS
V
= 10 V, ID = 15.5 A
GS
= 5 V, ID = 15.5 A
V
GS
= 30 V, ID = 15.5 A
V
DS
(Note 4)
1.0 -- 2.0 V
0.057
--
0.060
0.075
0.080
-- 41 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance -- 400 520 pF
Reverse Transfer Capacitance -- 52 67 pF
= 25 V, VGS = 0 V,
V
DS
f = 1.0 MHz
-- 3000 390 0 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time -- 520 1050 ns
Turn-Off Delay Time -- 170 350 n s
Turn-Off Fall Time -- 370 75 0 n s
Total Gate Charge
Gate-Source Charge -- 9.9 -- nC
Gate-Drain Charge -- 27 -- nC
V
= 100 V, ID = 34 A,
DD
R
= 25 Ω
G
= 160 V, ID = 34 A,
V
DS
V
GS
= 5 V
(Note 4, 5)
(Note 4, 5)
-- 45 100 ns
-- 55 72 nC
Ω
Drain-So urce Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.0mH, IAS = 31A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 34A, di/dt ≤ 300A/µs, VDD ≤ BV
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2008 Fairchild Semiconductor International
Maximum Continuous Drain-Source Diode Forward Current -- -- 31 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 124 A
V
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 1.1 -- µC
Starting TJ = 25°C
DSS,
= 0 V, IS = 31 A
GS
= 0 V, IS = 34 A,
V
GS
dI
/ dt = 100 A/µs
F
-- -- 1.5 V
-- 205 -- ns
(Note 4)
Rev. A1, Oct 2008
Typical Characteristics
FQB34N20L / FQI34N20L
2
V
Top : 10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
1
0
-1
10
GS
※
Notes :
1. 250μs Pulse Te st
℃
2. T
= 25
C
0
10
1
10
10
10
, Drain Current [A]
D
I
10
VDS, Drain-Source Voltage [V]
0.25
0.20
0.15
],
Ω
[
0.10
DS(ON)
R
0.05
Drain-Source On-Resistance
0.00
0306090120
VGS = 5V
VGS = 10V
※
Note : T
℃
= 25
J
ID, Dra i n Current [A]
2
10
1
10
℃
150
0
10
, Dra in Curre n t [A ]
℃
25
D
I
-1
10
0246810
℃
-55
※
Note s :
1. V
= 30V
DS
2. 250μs Pulse Test
VGS , Gate-Source Voltage [V]
Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i st ics
2
10
1
10
0
10
, Reverse Drain Current [A]
DR
I
10
℃
150
℃
25
-1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD, Sou r c e-Drain voltage [V]
※
Notes :
= 0V
1. V
GS
2. 250μs Pulse Test
Figure 3. On-Resistance Variati on vs .
Drain Current and Gate Voltage
7000
6300
5600
4900
4200
3500
2800
2100
Capacitance [pF]
1400
700
0
-1
10
Figure 5. Capacitance C haracteristics Figure 6. Gate Charg e C haracteristics
©2008 Fairchild Semiconductor International
C
C
C
C
iss
C
oss
C
rss
0
10
VDS, Drain-Source Voltage [V]
= Cgs + Cgd (Cds = shorted)
iss
= Cds + C
oss
gd
= C
rss
gd
※
Notes :
1. V
= 0 V
GS
2. f = 1 MH z
1
10
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
VDS = 40V
※
Note : I
= 34 A
D
Rev. A1, Oct 2008
12
10
8
VDS = 100V
VDS = 160V
6
4
, Gate-Source Voltage [V]
2
GS
V
0
0 20406080100120
QG, Tota l Gate Charge [n C]
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