Fairchild FQB33N10, FQI33N10 service manual

FQB33N10 / FQI33N10

100V N-Channel MOSFET

October 2008

®

QFET

General Description

These N-Channel enhancement mode power field effect

FQB33N10 / FQI33N10

transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor

Features

• 33A, 100V, R

• Low gate charge ( typical 38 nC)

• Low Crss ( typical 62 pF)

• Fast switching.

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

• RoHS Compliant

= 0.052Ω @VGS = 10 V

DS(on)

control.

D

G

!

G

S

D2-PAK

FQB Series

G

Absolute Maximum Ratings

D

S



= 25°C unless otherwise noted

T

C

I2-PAK

FQI Series

!

Symbol Parameter FQB33N10 / FQI33N10 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt

P

D

Drain-Source Voltage 100 V

Drain Current

- Continuous (T

Drain Current - Pulsed

Gate-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Power Dissipation (TA = 25°C) *

Power Dissipation (T

= 25°C)

C

= 25°C)

C

= 100°C)

C

(Note 1)

(Note 2)

(Note 1)

(Note 3)

33 A

23 A

132 A

±

25 V

435 mJ

33 A

12.7 mJ

6.0 V/ns

3.75 W

127 W

- Derate above 25°C 0.85 W/°C

, T

T

J

STG

T

L

Operating and Storage Temperature Range -55 to +175 °C

Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds

300 °C

!

D

!

"

" "

"

!

S

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θ

JC

R

θ

JA

R

θ

JA

* When mounted on the minimum pad size recommended (PCB Mount)

Thermal Resistance, Junction-to-Case -- 1.18 °CW

Thermal Resistance, Junction-to-Ambient * -- 40 °CW

Thermal Resistance, Junction-to-Ambient -- 62.5 °CW

FQB33N10 / FQI33N10

Electrical Characteristics



TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

∆

BV / ∆T

I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

V

= 0 V, ID = 250 µA

GS

= 250 µA, Referenced to 25°C

I

D

V

= 100 V, VGS = 0 V

DS

= 80 V, TC = 150°C

V

DS

V

= 25 V, VDS = 0 V

GS

V

= -25 V, VDS = 0 V

GS

100 -- -- V

-- 0.11 -- V/°C

-- -- 1

-- -- 10

-- -- 100 nA

-- -- -100 nA

On Characteristics

V

R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V, ID = 16.5 A

V

GS

V

= 40 V, ID = 16.5 A

DS

(Note 4)

2.0 -- 4.0 V

-- 0.040 0.052

-- 22 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance

Output Capacitance -- 320 420 pF

Reverse Transfer Capacitance -- 62 80 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 1150 1500 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

gs

gd

Turn-On Delay Time

Turn-On Rise Time -- 195 400 ns

Turn-Off Delay Time -- 80 170 ns

Turn-Off Fall Time -- 110 230 ns

Total Gate Charge

Gate-Source Charge -- 7.5 -- nC

Gate-Drain Charge -- 18 -- nC

V

= 50 V, ID = 33 A,

DD

R

V V

Ω

= 25

G

= 80 V, ID = 33 A,

DS

GS

= 10 V

(Note 4, 5)

-- 15 40 ns

-- 38 51 nC

µ

A

µ

A

Ω

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 0.6mH, I

3. ISD  33A, di/dt  300A/µs, VDD  BV

4. Pulse Test : Pulse width 300µs, Duty cycle 2%

5. Essentially independent of operating temperature

Maximum Continuous Drain-Source Diode Forward Current -- -- 33 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- 132 A

V

Drain-Source Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge -- 0.22 --

= 33A, VDD = 25V, RG = 25

AS

Ω,

Starting TJ = 25°C

DSS,

= 0 V, IS = 33 A

GS

= 0 V, IS = 33 A,

V

GS

dI

/ dt = 100 A/µs

F

(Note 4)

-- -- 1.5 V

-- 80 -- ns

µ

Rev. A1, Oct 2008

C

Typical Characteristics

V

2

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V Bottom : 4.5 V

1

0

-1

10

GS



Notes :

1. 250s Pulse Test



2. T

= 25

C

0

10

1

10

FQB33N10 / FQI33N10

, Drai n Current [A]

D

I

10

VDS, Drai n-Source Voltage [V]

2

10

1

10



175

, Drai n Current [ A]

D

I



25

0

10

246810

VGS, Gate-Source Voltage [ V]



Notes :

1. V

= 40V



-55

DS

2. 250s Pulse Test

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

0.20

0.15

VGS = 10V

],

0.10



[

DS(ON)

R

0.05

Drain-Source On-Resistance

0.00 0 20406080100120

VGS = 20V



ID, Drain Current [A]

Not e : T

2

10

1

10

, Rever se Drai n Curr ent [ A]

DR



= 25

J

I

0

10

0.2 0. 4 0.6 0.8 1.0 1.2 1. 4



175

VSD, Source-Drai n voltage [ V]



25

Notes :

1. V

= 0V

GS

2. 250s Pulse Test

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

3000

2500

2000

1500

1000

Capacit ance [pF]

500

0

-1

10

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

C C C

C

iss

C

oss

C

rss

0

10

VDS, Drai n-Source Volt age [V]

= Cgs + Cgd (Cds = short ed)

iss

= Cds + C

oss

gd

= C

rss

gd



Notes :

1. V

= 0 V

GS

2. f = 1 MHz

1

10

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

12

10

8

6

4

2

, Gate-Source Voltage [V]

GS

V

0

0 5 10 15 20 25 30 35 40

QG, Total Gate Charge [nC]

VDS = 50V

VDS = 80V



Note : I

= 33A

D

Rev. A1, Oct 2008

Fairchild FQB33N10, FQI33N10 service manual

Specifications and Main Features

Frequently Asked Questions

User Manual