Fairchild FQB12P20, FQI12P20 service manual

FQB12P20 / FQI12P20

200V P-Chann el MOSFET

October 2008

QFET

®

General Description

These P-Channel enhancement mode power field effect

FQB12P20 / FQI12P20

transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters.

Features

• -11.5A, -200V, R

• Low gate charge ( typical 31 nC)

• Low Crss ( typical 30 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

RoHS Compliant

•

= 0.47Ω @VGS = -10 V

DS(on)

D

G

!!!!

!!!!

G

S

D2-PAK

FQB Series

G

D

Absolute Maximum Ratings T

S

= 25°C unless otherwise noted

C

I2-PAK

FQI Series

Symbol Parameter FQB12P20 / FQI12P20 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

Drain-Source Voltage -200 V
Drain Current

- Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

-11.5 A

-7.27 A

-46 A
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TA = 25°C) *
Power Dissipation (T

= 25°C)

C

(Note 2)
(Note 1)
(Note 1)
(Note 3)

810 mJ

-11.5 A
12 mJ

-5.5 V/ns

3.13 W
120 W

- Derate above 25°C 0.96 W/°C

, T

T

J

STG

T

L

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300 °C

S

!!!!

!!!!

●●●●

●●●●

●●●●

●●●●

▶▶▶▶

▶▶▶▶

▲▲▲▲

▲▲▲▲

●●●●

●●●●

!!!!

!!!!

D

Thermal Charac teristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

R

θJA

* When mounted on the minimum pad size recommended (PCB Mount)

©2008 Fairchild Semiconductor International Rev. A1, Oct 2008

Thermal Resistance, Junction-to-Case -- 1.04 °C/W
Thermal Resistance, Junction-to-Ambient * -- 40 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

FQB12P20 / FQI12P20

Elerical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Te st Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

V

= 0 V, ID = -250 µA

GS

= -250 µA, Referenced to 25°C

I

D

V

= -200 V, VGS = 0 V

DS

= -160 V, TC = 125°C

V

DS

V

= -30 V, VDS = 0 V

GS

V

= 30 V, VDS = 0 V

GS

-200 -- -- V

-- - -- V/°C

-- -- -1 µA

-- -- -10 µA

-- -- -100 nA

-- -- 100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = -250 µA

DS

= -10 V, ID = -5.75 A

V

GS

V

= -40 V, ID = -5.75 A

DS

(Note 4)

-3.0 -- -5.0 V

-- 0.36 0.47 Ω

-- 6.4 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 190 250 pF
Reverse Transfer Capacitance -- 30 40 pF

= -25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 920 1200 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 195 400 ns
Turn-Off Delay Time -- 40 90 ns
Turn-Off Fall Time -- 60 13 0 ns
Total Gate Charge
Gate-Source Charge -- 8.1 -- nC
Gate-Drain Charge -- 16 -- nC

V

= -100 V, ID = -11.5 A,

DD

R

= 25 Ω

G

V

= -160 V, ID = -11.5 A,

DS

V

GS

= -10 V

(Note 4, 5)

(Note 4, 5)

-- 20 50 ns

-- 31 40 nC

Drain-So urce Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 9.2mH, IAS = -11.5A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ -11.5A, di/dt ≤ 300A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2008 Fairchild Semiconductor International

Maximum Continuous Drain-Source Diode Forward Current -- -- -11.5 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- -46 A

V

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 1.44 -- µC

Starting TJ = 25°C

DSS,

= 0 V, IS = -11.5 A

GS

= 0 V, IS = -11.5 A,

V

GS

dI

/ dt = 100 A/µs

F

-- -- -5.0 V

-- 180 -- ns

(Note 4)

Rev. A1, Oct 2008

Typical Characteristics

V

GS

Top : -15.0 V

-10.0 V

-8.0 V

-7.0 V

1

10

-6.5 V

-6.0 V
Bottom : -5.5 V

0

10

FQB12P20 / FQI12P20

, Drain Current [A]

D

-I

-1

10

-1

10

0

10

※

Notes :

1. 250μs Pulse Test

℃

2. T

= 25

C

1

10

-VDS, Drain-Source Voltage [V]

1

10

℃

0

10

, Dra i n Current [A]

D

-I

-1

10

246810

150

℃

25

-VGS , Gate-Source Voltage [V]

※

℃

-55

Notes :

1. V

= -40V

DS

2. 250μs Pulse Tes t

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i st ics

2.0

1.5

],

Ω

[

1.0

DS(on)

R

0.5

Drain-Source On-Resistance

0.0
0 10203040

VGS = - 10V

VGS = - 20V

※

Note : T

℃

= 25

J

-ID , Drai n Curren t [A]

1

10

0

10

, Reverse Drain Current [A]

DR

-I

-1

10

0.0 0.5 1.0 1.5 2.0 2.5 3.0

℃

150

-VSD , Sou r c e-Drain Voltage [V]

※

℃

25

Notes :

= 0V

1. V

GS

2. 250μs Pulse Tes t

Figure 3. On-Resistance Variati on vs .

Drain Current and Gate Voltage

2400

2000

1600

1200

800

Capacitance [pF]

400

0

-1

10

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics

©2008 Fairchild Semiconductor International

C

iss

C

oss

C

rss

C

iss

C

oss

C

rss

0

10

-VDS, Drain-Source Voltage [V]

= Cgs + Cgd (Cds = shorted)

= Cds + C

gd

= C

gd

※

Notes :

1. V

= 0 V

GS

2. f = 1 MH z

1

10

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

12

10

8

6

4

, Gate-Source Voltage [V]

GS

2

-V

0

0 5 10 15 20 25 30 35

QG, Tota l Gate Charge [n C]

VDS = -40V

VDS = -100V

VDS = -160V

※

Note : I

= -11.5 A

D

Rev. A1, Oct 2008