Fairchild FQH90N15, FQA90N15 service manual
FQH90N15 / FQA90N15
N-Channel Power MOSFET
FQH90N15 / FQA90N15 N-Channel Power MOSFET
October 2006
®
QFET
Features
• 90A, 150V, R
• Low gate charge (typical 220 nC)
•Low C
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability
•175°C maximum junction temper
(typical 200 pF)
rss
G
= 0.018Ω @VGS = 10 V
DS(on)
D
S
ature r
ating
TO-247
FQH Series
G
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for low
voltage applications such as audio amplifire, high efficiency
switching for DC/DC converters, and DC motor control,
uninterrupted power supply.
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G
SD
TO-3PN
FQA Series
D
!
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"
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S
Absolute Maximum Ratings
Symbol Parameter FQH90N15/FQA90N15 Unit
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
T
J, TSTG
T
L
Drain-Source Voltage 150 V
Drain Current - Continuous (TC = 25°C)
- Continuous (T
Drain Current - Pulsed
Gate-Source voltage ±25 V
Single Pulsed Avalanche Energy
Avalanche Current (Note 1) 90 A
Repetitive Avalanche Energy (Note 1) 37.5 mJ
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range -55 to +175 °C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
= 100°C)
C
(Note 1)
(Note 2)
(Note 3) 6.0 V/ns
90
63.5
360 A
1400 mJ
375
2.5
300 °C
t
ailored to
"
"
A
A
W
W/°C
Thermal Characteristics
Symbol Parameter Min. Max. Unit
R
θJC
R
θCS
R
θJA
©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FQH90N15 / FQA90N15 Rev. C
Thermal Resistance, Junction-to-Case -- 0.4 °C/W
Thermal Resistance, Case-to-Sink 0.24 -- °C/W
Thermal Resistance, Junction-to-Ambient -- 40 °C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Widt h Quantity
FQH90N15 FQH90N15 TO-247 -- -- 30
FQA90N15 FQA90N15 TO-3PN -- -- 30
FQA90N15 F
QA90N15_F109 TO-3PN -- -- 30
FQH90N15 / FQA90N15 N-Channel Power MOSFET
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Conditions Min. Typ. Max Units
Off Characteristics
BV
DSS
ΔBV
/ ΔT
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA 150 -- -- V
Breakdown Voltage Temperature
DSS
Coefficient
J
Zero Gate Voltage Drain Current VDS = 150V, VGS = 0V
I
= 250μA, Referenced to 25°C -- 0.15 -- V/°C
D
= 120V, TC = 150°C
V
DS
--
--
--
--
Gate-Body Leakage Current, Forward VGS = 25V, VDS = 0V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -25V, VDS = 0V -- -- -100 nA
Gate Threshold Voltage VDS = VGS, ID = 250μA 2.0 -- 4.0 V
Static Drain-Source
On-Resistance
Forward Transconductance VDS = 40V, ID = 45A
Input Capacitance VDS = 25V, VGS = 0V,
Output Capacitance -- 1400 1800 pF
V
= 10V, ID = 45A -- 0.014 0.018 Ω
GS
(Note 4)
-- 68 -- S
-- 6700 8700 pF
f = 1.0MHz
Reverse Transfer Capacitance -- 200 260 pF
Turn-O n Delay Time VDD = 75V, ID = 90A
R
= 25Ω
Turn-O n Ris e Ti me -- 760 1500 ns
G
-- 105 220 ns
Turn-O ff Delay Time -- 470 950 ns
Turn-O ff Fall Time -- 410 830 ns
Total Gate Charge VDS = 120V, ID = 90A
= 10V
V
Gate-Source Charge -- 43 -- nC
GS
Gate-Drain Charge -- 11 0 -- nC
(Note 4, 5)
-- 220 285 nC
(Note 4, 5)
Maximum Continuous Drain-Source Diode Forward Current -- -- 90 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 360 A
Drain-Source Diode Forward Voltage VGS = 0V, IS = 90A -- -- 1.5 V
Reverse Recovery Time VGS = 0V, IS = 90A
dI
/dt =100A/μs (Note 4)
Reverse Recovery Charge -- 0.97 -- μC
F
-- 175 -- ns
10
1
μA
μA
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.29mH, IAS = 90A, VDD = 25V, RG = 25Ω, Starting TJ = 25°C
3. I
≤ 90A, di/dt ≤ 300A/μs, VDD ≤ BV
SD
4. Pulse Test: Pulse width ≤ 300
5. Essentially Independent of Operating Temperature Typical Characteristics
, Starting TJ = 25°C
DSS
μs, Duty Cycle ≤ 2%
FQH90N15 / FQA90N15 Rev. C
2 www.fairchildsemi.com
Typical Performance Characteristics
FQH90N15 / FQA90N15 N-Channel Power MOSFET
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
V
GS
Top : 15.0 V
10.0 V
8.0 V
2
7.0 V
10
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
2
10
1
10
175oC
1
10
, Drain Current [A]
D
I
-1
10
0
10
Notes :
1. 250
2. T
μs Pulse Test
= 25oC
C
1
10
, Drain Current [A]
10
D
I
10
VDS, Drain-Source Voltage [V]
25oC
0
-1
-55oC
Notes :
1. V
2. 250
246810
VGS , Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
0.12
2
10
0.09
[Ω],
0.06
DS(on)
R
0.03
Drain-Source On-Resistance
0.00
0 50 100 150 200 250 300
VGS = 20V
ID , Drain Current [A]
VGS = 10V
Note : TJ = 25oC
1
10
0
10
, Reverse Drain Current [A]
DR
I
10
175oC
25oC
-1
0.0 0.4 0.8 1.2 1.6 2.0 2.4
VSD , Source-Drain Voltage [V]
Notes :
1. V
2. 250
= 30V
DS
μs Pulse Test
= 0V
GS
μs Pulse Test
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
18000
15000
12000
9000
6000
Capacitance [pF]
3000
0
-1
10
VDS, Drain-Source Voltage [V]
FQH90N15 / FQA90N15 Rev. C
C
= Cgs + Cgd (Cds = shorted)
iss
= Cds + C
C
oss
gd
C
= C
rss
gd
C
iss
C
oss
10
1
Notes :
1. V
GS
2. f = 1 MHz
C
rss
0
10
= 0 V
12
10
8
6
4
, Gate-Source Voltage [V]
2
GS
V
0
0 50 100 150 200 250
QG, Total Gate Charge [nC]
VDS = 30V
VDS = 75V
VDS = 120V
Note : ID = 90 A
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