Fairchild FQH8N100C service manual
FQH8N100C
1000V N-Channel MOSFET
FQH8N100C 1000V N-Channel MOSFET
March 2008
®
QFET
Features
• 8A, 1000V, R
• Low gate charge (typical 53nC)
• Low C
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
(typical 16pF)
rss
= 1.45Ω @VGS = 10 V
DS(on)
G
D
TO-247
S
FQH Series
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
D
G
S
Absolute Maximum Ratings
Symbol Parameter FQH8N100C Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
TJ, T
STG
T
L
Drain-Source Voltage 1000 V
Drain Current - Continuous (TC = 25°C) 8.0 A
- Continuous (TC = 100°C) 5.0 A
Drain Current - Pulsed
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TC = 25°C) 225 W
- Derate above 25°C 1.79 W/°C
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
32 A
850 mJ
8.0 A
22 mJ
4.0 V/ns
300 °C
Thermal Characteristics
Symbol Parameter Typ Max Units
R
θJC
R
θCS
R
θJA
©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FQH8N100C Rev. A
Thermal Resistance, Junction-to-Case -- 0.56 °C/W
Thermal Resistance, Case-to-Sink 0.24 -- °C/W
Thermal Resistance, Junction-to-Ambient -- 40 °C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FQH8N100C FQH8N100C TO-247 -- -- 30
FQH8N100C 1000V N-Channel MOSFET
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
∆T
J
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 25mH, IAS =8.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 8.0A, di/dt ≤200A/µs, VDD ≤ BV
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 1000 -- -- V
/
DSS
Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 1.4 -- V/°C
Zero Gate Voltage Drain Current VDS = 1000 V, VGS = 0 V -- -- 10 µA
VDS = 800 V, TC = 125°C -- -- 100 µA
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
Gate Threshold Voltage VDS = VGS, ID = 250 µA 3.0 -- 5.0 V
Static Drain-Source On-Resistance VGS = 10 V, ID = 4.0A -- 1.2 1.45 Ω
Forward Transconductance VDS = 50 V, ID = 4.0 A (Note 4) -- 8.0 -- S
Input Capacitance VDS = 25 V, VGS = 0 V,
Output Capacitance -- 195 255 pF
f = 1.0 MHz
-- 2475 3220 pF
Reverse Transfer Capacitance -- 16 21 pF
Turn-On Delay Time VDD = 500 V, ID = 8.0A,
Turn-On Rise Time --
Turn-Off Delay Time --
Turn-Off Fall Time --
RG = 25 Ω
(Note 4, 5)
Total Gate Charge VDS = 800 V, ID = 8.0A,
Gate-Source Charge --
Gate-Drain Charge --
VGS = 10 V
(Note 4, 5)
--
--
50 110
95 200
122 254
80 170
53 70
13
23
Maximum Continuous Drain-Source Diode Forward Current -- -- 8.0 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 32.0 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 8.0 A -- -- 1.4 V
Reverse Recovery Time VGS = 0 V, IS = 8.0 A,
Reverse Recovery Charge -- 5.2 --
Starting TJ = 25°C
DSS,
dIF / dt = 100 A/µs (Note 4)
-- 620 -- ns
ns
ns
ns
ns
nC
-- nC
-- nC
µC
FQH8N100C Rev. A
2 www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
FQH8N100C 1000V N-Channel MOSFET
10
10
, Drain Current [A]
D
I
10
V
Top : 15.0 V
10.0 V
8.0 V
7.0 V
1
6.5 V
6.0 V
Bottom : 5.5 V
0
-1
-1
10
GS
0
10
VDS, Drain-Source Voltage [V]
1
10
150oC
25oC
0
10
, Drain Current [A]
D
Notes :※
1. 250µ s Pul se Test
2. T
= 25℃
C
1
10
I
-1
10
246810
VGS, Gate-Source Voltage [V]
-55oC
Note s :※
1. VDS = 50V
2. 250µ s Pulse Test
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
3.0
2.5
VGS = 10V
2.0
[Ω ],
DS(ON)
R
1.5
VGS = 20V
1.0
Drain-Source On-Resistance
0.5
0 5 10 15 20 25
ID, Drai n Current [A]
Note : T※J = 25℃
1
10
0
10
, Reverse Drain Current [A]
DR
I
-1
10
0.2 0.4 0. 6 0.8 1.0 1. 2 1.4
150℃
VSD, Source- Drai n voltage [V]
25℃
Note s :※
1. VGS = 0V
2. 250µ s Pulse Test
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
4000
3500
3000
2500
2000
1500
Capacitance [pF]
1000
500
0
-1
10
FQH8N100C Rev. A
C
C
C
C
iss
C
oss
C
rss
0
10
VDS, Drain-Source Voltage [V]
= Cgs + Cgd (Cds = shorted)
iss
= Cds + C
oss
gd
= C
rss
gd
Notes :※
1. VGS = 0 V
2. f = 1 MHz
1
10
12
10
8
6
4
, Gate-Source Voltage [V]
GS
2
V
0
0 10203040506070
VDS = 800V
3 www.fairchildsemi.com
VDS = 200V
VDS = 500V
QG, Total Gate Charge [nC]
Note : I※D = 8A
Loading...