Fairchild FQH44N10 service manual

FQH44N10_F133

100V N-Channel MOSFET

FQH44N10_F133

Octorber 2008

®

QFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

G

D

S

Absolute Maximum Ratings T

Symbol Parameter FQH44N10_F133 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt P

D

T

, T

J

STG

T

L

Drain-Source Voltage 100 V

Drain Current

Drain Current - Pulsed

Gate-Source Voltage ± 25 V

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

Operating and Storage Temperature Range -55 to +175 °C

Maximum lead temperature for soldering purposes, 1/8∀ from case for 5 seconds

- Continuous (T

- Derate above 25°C 1.2 W/°C

TO-247

FQH Series

= 25°C unless otherwise noted

C

= 25°C)

C

= 100°C)

C

Features

• 48A, 100V, R

• Low gate charge ( typical 48 nC)

• Low Crss ( typical 85 pF)

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

G

(Note 1)

(Note 2)

(Note 1)

(Note 3)

= 0.039Ω @VGS = 10 V

DS(on)

D

S

48 A

34 A

192 A

530 mJ

48 A

18 mJ

6.0 V/ns

180 W

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θCS

R

θJA

Thermal Resistance, Junction-to-Case -- 0.83 °C/W

Thermal Resistance, Case-to-Sink 0.24 -- °C/W

Thermal Resistance, Junction-to-Ambient -- 40 °C/W

1

FQH44N10_F133

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV / ΔT

I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 μA

V

GS

I

= 250 μA, Referenced to 25°C

D

V

= 100 V, VGS = 0 V

DS

V

= 80 V, TC = 150°C

DS

= 25 V, VDS = 0 V

V

GS

= -25 V, VDS = 0 V

V

GS

100 -- -- V

-- 0.1 -- V/°C

-- -- 1 μA

-- -- 10 μA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance

= VGS, ID = 250 μA

V

DS

V

= 10 V, ID = 24 A

GS

= 40 V, ID = 24 A (Note 4)

V

DS

2.0 -- 4.0 V

-- 0.03 0.039 Ω

-- 31 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance

Output Capacitance -- 425 550 pF

Reverse Transfer Capacitance -- 85 110 pF

V

= 25 V, VGS = 0 V,

DS

f = 1.0 MHz

-- 1400 1800 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

gs

gd

Turn-On Delay Time

Turn-On Rise Time -- 190 390 ns

Turn-Off Delay Time -- 90 190 ns

Turn-Off Fall Time -- 100 210 ns

Total Gate Charge

Gate-Source Charge -- 9.0 -- nC

Gate-Drain Charge -- 24 -- nC

= 50 V, ID = 43.5 A,

V

DD

R

= 25 Ω

G

(N ote 4 , 5)

V

= 80 V, ID = 43.5 A,

DS

= 10 V

V

GS

(Note 4, 5)

-- 19 45 ns

-- 48 62 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 0.345mH, I

3. I

SD

4. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Maximum Continuous Drain-Source Diode Forward Current -- -- 48 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- 192 A

Drain-Source Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge -- 360 -- nC

= 48A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C

≤ 43.5A, di/dt ≤ 300A/μs, VDD ≤ BV

AS

Starting TJ = 25°C

DSS,

= 0 V, IS = 48 A

V

GS

V

= 0 V, IS = 43.5 A,

GS

/ dt = 100 A/μs (Not e 4)

dI

F

2

-- -- 1.5 V

-- 98 -- ns

Rev. A, October 2008

Typical Characteristics

FQH44N10_F133

V

GS

Top : 15.0 V

2

10.0 V

10

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V Bottom : 4.5 V

1

10

, Drain Current [A]

D

I

0

10

-1

10

0

10

1. 250レs Pulse Test

2. T

VDS, Drain-Source Voltage [V]

0.15

0.12

0.09

[Ω],

DS(on)

R

0.06

Drain-Source On-Resistance

0.03

0.00 0 30 60 90 120 150 180

VGS = 10V

VGS = 20V

ID , Drain Current [ A]

Notes :∝

= 25∩

C

10

1

Note : T∝J = 25∩

2

10

1

10

175∩

25∩

0

10

, Drain Current [A]

D

I

-1

10

246810

-55∩

Notes :∝

1. VDS = 40V

2. 250

レs Pulse Test

VGS , Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

2

10

1

10

0

10

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

175∩

25∩

Notes :∝

1. VGS = 0V

2. 250

レs Pulse Test

VSD , Source-Drai n Voltage [V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

4000

3500

3000

2500

2000

1500

Capacitance [pF]

1000

500

0

-1

10

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

C

iss

C

oss

C

rss

0

10

1

Notes :∝

1. VGS = 0 V

2. f = 1 MHz

VDS, Drai n-Source Vol tage [ V]

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 1020304050

QG, Total Gate Charge [nC]

VDS = 50V

VDS = 80V

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

3

Note : I∝D = 43.5A

Fairchild FQH44N10 service manual

Specifications and Main Features

Frequently Asked Questions

User Manual

FQH44N10_F133

100V N-Channel MOSFET

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics