Fairchild FQD7P06, FQU7P06 service manual
FQD7P06 / FQU7P06
60V P-Channel MOSFET
FQD7P06 / FQU7P06
May 2001
TM
QFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
Features
• -5.4A, -60V, R
• Low gate charge ( typical 6.3 nC)
• Low Crss ( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
= 0.45Ω @VGS = -10 V
DS(on)
well suited for low voltage applications such as automotive,
DC/DC converters, and high efficiency switching fo r power
management in portable and battery operated products.
S
!!!!
D
S
D-PAK
FQD Series
G
G
Absolute Maximum Ratings T
I-PAK
D
S
= 25°C unless otherwise noted
C
FQU Series
G
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D
Symbol Parameter FQD7P06 / FQU7P06 Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
Drain-Source Voltage -60 V
Drain Current
- Continuous (T
- Continuous (T
Drain Current - Pulsed
= 25°C)
C
= 100°C)
C
(Note 1)
-5.4 A
-3.42 A
-21.6 A
Gate-Source Voltage ± 25 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TA = 25°C) *
Power Dissipation (T
= 25°C)
C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
90 mJ
-5.4 A
2.8 mJ
-7.0 V/ns
2.5 W
28 W
- Derate above 25°C 0.22 W/°C
, T
T
J
STG
T
L
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Thermal Characteristics
Symbol Parameter Typ Max Units
R
θJC
R
θJA
R
θJA
* When mounted on the minimum pad size recommended (PCB Mount)
©2001 Fairchild Semiconductor Corporation Rev. A2. May 2001
Thermal Resistance, Junction-to-Case -- 4.5 °C/W
Thermal Resistance, Junction-to-Ambient * -- 50 °C/W
Thermal Resistance, Junction-to-Ambient -- 110 °C/W
FQD7P06 / FQU7P06
Elerical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Te st Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
/ ∆T
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
= 0 V, ID = -250 µA
V
GS
I
= -250 µA, Referenced to 25°C
D
V
= -60 V, VGS = 0 V
DS
V
= -48 V, TC = 125°C
DS
V
= -25 V, VDS = 0 V
GS
= 25 V, VDS = 0 V
V
GS
-60 -- -- V
-- -0.07 -- V/°C
-- -- -1 µA
-- -- -10 µA
-- -- -100 nA
-- -- 100 nA
On Characteristics
V
R
g
FS
GS(th)
DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
= VGS, ID = -250 µA
DS
= -10 V, ID = -2.7 A
V
GS
= -30 V, ID = -2.7 A
V
DS
(Note 4)
-2.0 -- -4.0 V
-- 0.36 0.451 Ω
-- 3.8 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance -- 110 145 pF
Reverse Transfer Capacitance -- 25 32 pF
= -25 V, VGS = 0 V,
V
DS
f = 1.0 MHz
-- 225 295 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time -- 50 110 ns
Turn-Off Delay Time -- 7 .5 25 ns
Turn-Off Fall Time -- 25 60 ns
Total Gate Charge
Gate-Source Charge -- 1.6 -- nC
Gate-Drain Charge -- 3.1 -- nC
= -30 V, ID = -3.5 A,
V
DD
= 25 Ω
R
G
V
= -48 V, ID = -7.0 A,
DS
V
GS
= -10 V
(Note 4, 5)
(Note 4, 5)
-- 7 25 ns
-- 6.3 8.2 nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 3.6mH, IAS = -5.4A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ -7.0A, di/dt ≤ 300A/µs, VDD ≤ BV
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Maximum Continuous Drain-Source Diode Forward Current -- -- -5.4 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- -21.6 A
= 0 V, IS = -5.4 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 0.23 -- µC
Starting TJ = 25°C
DSS,
V
GS
= 0 V, IS = -7.0 A,
V
GS
/ dt = 100 A/µs
dI
F
-- -- -4.0 V
-- 77 -- ns
(Note 4)
Rev. A2. May 2001©2001 Fairchild Semiconductor Corporation
Typical Characteristics
FQD7P06 / FQU7P06
V
GS
Top : - 15.0 V
1
- 10.0 V
10
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Botto m : - 4.5 V
0
10
, Drain C u rren t [A ]
D
-I
-1
10
-1
10
0
10
※
Notes :
1. 250μs Pulse Tes t
2. TC = 25
-VDS, Drain-Source Voltage [V]
1.4
1.2
1.0
],
Ω
0.8
[
DS(on)
0.6
R
0.4
Drain-Source On-Resistance
0.2
0.0
0 4 8 12 16 20
VGS = - 10V
VGS = - 20V
※
-ID , Drai n Curren t [A]
10
Note : T
1
10
℃
℃
1
150
0
10
℃
25
, Drain Current [A]
D
-I
-1
10
246810
℃
-55
※
Notes :
1. V
= -30V
DS
2. 250μs Pulse Test
-VGS , Gate-Source Voltage [V]
Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s
1
10
℃
= 25
J
0
10
℃
150
℃
, Reve rs e D ra in Current [A ]
DR
-I
-1
10
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
25
※
Notes :
= 0V
1. V
GS
2. 250μs Pulse Test
-VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variati on vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
600
500
400
300
200
Capacitance [pF]
100
0
-1
10
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
gd
C
= C
rss
gd
C
oss
※
10
1. V
2. f = 1 MH z
1
Notes :
= 0 V
GS
C
iss
C
rss
0
10
VDS, Drain-Source Voltage [V]
12
10
8
6
4
, Gate-Source Voltage [V]
GS
2
-V
0
01234567
QG, Tota l Gate Charge [n C]
VDS = -30V
VDS = -48V
※
Note : I
= -7.0 A
D
Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics
©2001 Fairchild Semiconductor Corporation Rev. A2. May 2001
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