Fairchild FQD6N50C, FQU6N50C service manual

FQD6N50C / FQU6N50C

FQD6N50C / FQU6N50C

500V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.

D

GS

D-PAK

FQD Series

GSD

Features

• 4.5A, 500V, R

• Low gate charge (typical 19nC)

• Low Crss (typical 15pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• RoHS Compliant

I-PAK

FQU Series

DS(on)

= 1.2 Ω @V

G

October 2008

QFET

= 10 V

GS

D

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Absolute Maximum Ratings

TC = 25°C unless otherwise noted

Symbol Parameter FQD6N50C / FQU6N50C Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt

P

D

Drain-Source Voltage 500 V

Drain Current

- Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

4.5 A

2.7 A

18 A

Gate-Source Voltage ± 30 V

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Power Dissipation (TA = 25°C)*

Power Dissipation (T

= 25°C)

C

(Note 2)

(Note 1)

(Note 1)

(Note 3)

300 mJ

4.5 A

6.1 mJ

4.5 V/ns

2.5 W

61 W

- Derate above 25°C 0.49 W/°C

, T

T

J

STG

T

L

Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

R

θJA

* When mounted on the minimum pad size recommended (PCB Mount)

Thermal Resistance, Junction-to-Case - 2.05 °C/W
Thermal Resistance, Junction-to-Ambient * - 50 °C/W
Thermal Resistance, Junction-to-Ambient - 110 °C/W

©2008 Fairchild Semiconductor Corporation

Rev. B1, October 2008

FQD6N50C / FQU6N50C

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T

I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature
Coefficient

J

Zero Gate Voltage Drain Current

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

V

= 0 V, I

GS

= 250 µA, Referenced to 25°C

I

D

V

= 500 V, VGS = 0 V

DS

= 400 V, TC = 125°C

V

DS

V

= 30 V, VDS = 0 V

GS

V

= -30 V, VDS = 0 V

GS

= 250 µA

D

500 -- -- V

-- 0.8 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage

Static Drain-Source
On-Resistance

Forward Transconductance

V

= VGS, I

DS

V

GS

V

DS

D

= 10 V, ID = 2.25A

= 40 V, ID = 2.25A

= 250 µA

(Note 4)

2.0 -- 4.0 V

-- 1.0 1.2 Ω

-- 4.5 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance

Output Capacitance -- 80 105 pF

Reverse Transfer Capacitance -- 15 20 pF

V

= 25 V, VGS = 0 V,

DS

f = 1.0 MHz

-- 540 700 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Q

Q

g

gs

gd

Turn-On Delay Time

Turn-On Rise Time -- 35 80 ns

Turn-Off Delay Time -- 55 120 ns

Turn-Off Fall Time -- 45 100 ns

Total Gate Charge

Gate-Source Charge -- 2.8 -- nC

Gate-Drain Charge -- 8.8 -- nC

V

= 250 V, ID = 4.5A,

DD

R

= 25 Ω

G

(Note 4, 5)

V

= 400 V, ID = 4.5A,

DS

V

= 10 V

GS

(Note 4, 5)

-- 10 30 ns

-- 19 25 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 26.6 mH, I

3. I

SD

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2008 Fairchild Semiconductor Corporation

Maximum Continuous Drain-Source Diode Forward Current -- -- 4.5 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- 18 A

Drain-Source Diode Forward Voltage

Reverse Recovery Time
Reverse Recovery Charge -- 1.6 -- µC

= 4.5A, VDD = 50V, R

≤ 4.5A, di/dt ≤ 200A/µs, VDD ≤ BV

AS

= 25 Ω, Starting T

G

Starting TJ = 25°C

DSS,

= 25°C

J

V

= 0 V, IS = 4.5 A

GS

= 0 V, IS = 4.5 A,

V

GS

dI

/ dt = 100 A/µs

F

-- -- 1.4 V

-- 260 -- ns

(Note 4)

Rev. B1, October 2008

Typical Characteristics

FQD6N50C / FQU6N50C

V

GS

Top : 15.0 V

1

10

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V
Bottom : 5.0 V

0

10

, Drain Current [A]

D

I

-1

10

-1

10

0

10

Notes :

※

1. 250µ s Pulse Test

2. T

1

10

VDS, Drai n-Source Vol tage [V]

3.5

3.0

2.5

[Ω ],

2.0

DS(ON)

R

1.5

Drain-Source On-Resistance

1.0

0.5
0 5 10 15

VGS = 10V

※

ID, Drain Current [ A]

= 25

C

Note : T

℃

VGS = 20V

= 25

J

1

10

150oC

25oC

0

10

, Drain Current [A]

D

I

-1

10

246810

-55oC

Notes :

※

1. VDS = 40V

2. 250µ s Pulse Test

VGS, Gate-Sour ce Volt age [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

1

10

℃

0

10

150

℃

25

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4

℃

Notes :

※

1. VGS = 0V

2. 250µ s Pulse Test

VSD, Sourc e-Drain vol tage [V]

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

1200

1000

800

600

400

Capacitance [pF]

200

0

-1

10

Figure 5. Capacitance Chara cteristics Figure 6. Gate Charge Characterist i cs

©2008 Fairchild Semiconductor Corporation

C

iss

C

oss

C

rss

0

10

VDS, Drain- Source Voltage [V]

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

※

1. VGS = 0 V

2. f = 1 MHz

1

10

Note ;

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

12

10

8

VDS = 250V

VDS = 400V

6

4

, Gate-Source Voltage [V]

GS

2

V

0

0 5 10 15 20

QG, Total Gate Charge [nC]

VDS = 100V

Note : I

※

= 4.5A

D

Rev. B1, October 2008