Fairchild FQD4P25TM service manual

FQD4P25TM_WS / FQU4P25

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250V P-Channel MOSFET

October 27, 2011

General Description

These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state resistance, provide superior switching

FQD4P25TM_WS / FQU4P25

performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters.

Features

• -3.1A, -250V, R

• Low gate charge ( typical 10 nC)

• Low Crss ( typical 10.3 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• RoHS Compliant

= 2.1Ω @VGS = -10 V

DS(on)

D

G

S

D-PAK

FQD Series

G

G

Absolute Maximum Ratings T

D

S

= 25°C unless otherwise noted

C

I-PAK

FQU Series

Symbol Parameter FQD4P25TM_WS / FQU4P25 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt

P

D

Drain-Source Voltage -250 V

Drain Current

Drain Current - Pulsed

- Continuous (TC = 25°C)

- Continuous (TC = 100°C)

(Note 1)

-3.1 A

-1.96 A

-12.4 A

Gate-Source Voltage ± 30 V

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Power Dissipation (TA = 25°C) *

Power Dissipation (TC = 25°C)

(Note 2)

(Note 1)

(Note 1)

(Note 3)

280 mJ

-3.1 A

4.5 mJ

-5.5 V/ns

2.5 W

45 W

- Derate above 25°C 0.36 W/°C

TJ, T

T

L

STG

Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300 °C

S

D

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

R

θJA

* When mounted on the minimum pad size recommended (PCB Mount)

©2011 Fairchild Se miconductor Internationa l Rev. A4, Oct 2011

Thermal Resistance, Junction-to-Case -- 2.78 °C/W

Thermal Resistance, Junction-to-Ambient * -- 50 °C/W

Thermal Resistance, Junction-to-Ambient -- 110 °C/W

FQD4P25TM_WS / FQU4P25

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T

I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature
Coefficient

J

Zero Gate Voltage Drain Current

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

VGS = 0 V, ID = -250 µA

ID = -250 µA, Referenced to 25°C

VDS = -250 V, VGS = 0 V

VDS = -200 V, TC = 125°C

VGS = -30 V, VDS = 0 V

VGS = 30 V, VDS = 0 V

-250 -- -- V

-- -0.21 -- V/°C

-- -- -1 µA

-- -- -10 µA

-- -- -100 nA

-- -- 100 nA

On Characteristics

V

R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage

Static Drain-Source
On-Resistance

Forward Transconductance

VDS = VGS, ID = -250 µA

VGS = -10 V, ID = -1.55 A

VDS = -40 V, ID = -1.55 A

(Note 4)

-3.0 -- -5.0 V

-- 1.63 2.1 Ω

-- 2.0 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance

Output Capacitance -- 65 85 pF

Reverse Transfer Capacitance -- 10 13 pF

VDS = -25 V, VGS = 0 V,
f = 1.0 MHz

-- 325 420 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Q

Q

Turn-On Delay Time

Turn-On Rise Time -- 60 130 ns

VDD = -125 V, ID = -4.0 A,
RG = 25 Ω

Turn-Off Delay Time -- 14 40 ns

Turn-Off Fall Time -- 27 65 ns

g

gs

gd

Total Gate Charge

Gate-Source Charge -- 2.7 -- nC

Gate-Drain Charge -- 5.2 -- nC

VDS = -200 V, ID = -4.0 A,
VGS = -10 V

(Note 4, 5)

(Note 4, 5)

-- 9.5 30 ns

-- 10.3 14 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 46.6mH, IAS = -3.1A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ -4.0A, di/dt ≤ 300A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2011 Fairchild Se miconductor Internationa l

Maximum Continuous Drain-Source Diode Forward Current -- -- -3.1 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- -12.4 A

Drain-Source Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge -- 0.64 -- µC

Starting TJ = 25°C

DSS,

VGS = 0 V, IS = -3.1 A

VGS = 0 V, IS = -4.0 A,
dIF / dt = 100 A/µs

-- -- -5.0 V

-- 140 -- ns

(Note 4)

Rev. A4, Oct 2011

0.0 0.5 1.0 1.5 2.0 2.5 3.0

10

-1

10

0

10

1

150℃

Notes :※

1. VGS = 0V

2. 250µs Pulse Test

25℃

-I

DR

, Reverse Drain Current [A]

-VSD , Source-Drain Voltage [V]

2 4 6 8 10

10

-1

10

0

10

1

150℃

25℃

-55℃

Notes :※

1. VDS = -50V

2. 250µs Pulse Test

-I

D

, Drain Current [A]

-VGS , Gate-Source Voltage [V]

10

-1

10

0

10

1

10

-2

10

-1

10

0

10

1

V

GS

Top : -15.0 V

-10.0 V

-8.0 V

-7.0 V

-6.5 V

-6.0 V
Bottom : -5.5 V

Notes :※

1. 250µs Pulse Test

2. TC = 25℃

-I

D

, Drain Current [A]

-VDS, Drain-Source Voltage [V]

0 3 6 9 12

0

2

4

6

8

Note : T※J = 25℃

VGS = - 20V

VGS = - 10V

R

DS(on)

[Ω],

Drain-Source On-Resistance

-ID , Drain Current [A]

0 2 4 6 8 10 12

0

2

4

6

8

10

12

VDS = -125V

VDS = -50V

VDS = -200V

Note : I※D = -4.0 A

-V

GS

, Gate-Source Voltage [V]

QG, Total Gate Charge [nC]

10

-1

10

0

10

1

0

100

200

300

400

500

600

700

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

Notes :※

1. VGS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

Capacitance [pF]

-VDS, Drain-Source Voltage [V]

Typical Characteristics

FQD4P25TM_WS / FQU4P25

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

©2011 Fairchild Se miconductor Internationa l

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

Rev. A4, Oct 2011