Fairchild FQD3N60C, FQU3N60C service manual
FQD3N60C / FQU3N60C
600V N-Channel MOSFET
FQD3N60C / FQU3N60C 600V N-Channel MOSFET
August 2006
®
QFET
Features
• 2.4A, 600V, R
• Low gate charge ( typical 10.5nC)
• Low Crss ( typical 5pF)
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability
= 3.4 Ω @VGS = 10 V
DS(on)
GS
D-PAK
FQD Series
D
Absolute Maximum Ratings
Symbol Parameter
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
, T
T
J
STG
T
L
Drain-Source Voltage 600 V
Drain Current - Continuous (TC = 25°C) 2.4 A
- Continuous (T
Drain Current - Pulsed
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TC = 25°C) 50 W
- Derate above 25°C 0.4 W/°C
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts
based on half bridge topology.
D
I-PAK
GSD
= 100°C) 1.5 A
C
FQU Series
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
S
FQD3N60C / FQU3N60C
9.6 A
150 mJ
2.4 A
5.0 mJ
4.5 V/ns
300 °C
Units
Thermal Characteristics
Symbol Parameter
R
θJC
R
θJA*
R
θJA
* When mounted on the minimum pad size recommended (PCB Mount)
©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FQD3N60C / FQU3N60C Rev. A1
Thermal Resistance, Junction-to-Case 2.5 °C/W
Thermal Resistance, Junction-to-Ambient* 50 °C/W
Thermal Resistance, Junction-to-Ambient 110 °C/W
FQD3N60C / FQU3N60C
Units
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FQD3N60C FQD3N60CTM D-PAK 380mm 16mm 2500
FQD3N60C FQD3N60CTF D-PAK 380mm 16mm 2000
FQU3N60C FQU3N60CTU I-PAK - - 75
FQD3N60C / FQU3N60C 600V N-Channel MOSFET
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
∆T
J
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 47mH, IAS = 2.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 3A, di/dt ≤ 200A/µs, VDD ≤ BV
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 600 -- -- V
/
DSS
Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.6 -- V/°C
Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 1 µA
= 480 V, TC = 125°C -- -- 10 µA
V
DS
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
Gate Threshold Voltage VDS = VGS, ID = 250 µA2.0--4.0V
Static Drain-Source On-Resistance VGS = 10 V, ID = 1.2 A -- 2.8 3.4 Ω
Forward Transconductance VDS = 40 V, ID = 1.2 A (Note 4) -- 3.5 -- S
Input Capacitance VDS = 25 V, VGS = 0 V,
Output Capacitance -- 45 60 pF
Reverse Transfer Capacitance -- 5 8 pF
f = 1.0 MHz
Turn-O n Delay Time VDD = 300 V, ID = 3A,
R
= 25 Ω
Turn-On Rise Time -- 30 70 ns
G
-- 435 565 pF
-- 12 34 ns
Turn-Off Delay Time -- 35 80 ns
Turn-Off Fall Time -- 35 80 ns
Total Gate Charge VDS = 480 V, ID = 3A,
V
= 10 V
Gate-Source Charge -- 2.1 -- nC
Gate-Drain Charge -- 4.5 -- nC
GS
(Note 4, 5)
(Note 4, 5)
-- 10.5 14 nC
Maximum Continuous Drain-Source Diode Forward Current -- -- 3 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 12 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.4 A -- -- 1.4 V
Reverse Recovery Time VGS = 0 V, IS = 3 A,
dI
/ dt = 100 A/µs (Note 4)
Reverse Recovery Charge -- 1.6 --
Starting TJ = 25°C
DSS,
F
-- 260 -- ns
µC
FQD3N60C / FQU3N60C Rev. A1
2 www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
FQD3N60C / FQU3N60C 600V N-Channel MOSFET
1
10
0
10
, Drain Current [A]
D
I
-1
10
10
V
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
0
GS
VDS, Drain-Source Voltage [V]
Notes :※
1. 250µ s Pulse Test
2. T
= 25℃
C
1
10
1
10
150oC
, Drain Current [A]
D
I
10
25oC
0
246810
VGS, Gate-Source Voltage [V]
-55oC
Notes :※
1. VDS = 40V
2. 250µ s Pulse Test
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
25℃
Notes :※
1. VGS = 0V
2. 250µ s Pulse Test
12
10
8
[Ω ],
6
DS(ON)
R
4
VGS = 10V
VGS = 20V
Drain-Source On-Resistance
2
0
01234567
Note : T※J = 25℃
ID, Drain Current [A]
1
10
0
10
, Reverse Drain Current [A]
DR
I
-1
10
0.20.40.60.81.01.21.41.6
150℃
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
800
700
C
600
500
400
300
Capacitances [pF]
200
100
0
-1
10
oss
C
iss
C
rss
VDS, Drain-Source Voltage [V]
FQD3N60C / FQU3N60C Rev. A1
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
gd
C
= C
rss
gd
Note ;※
1. VGS = 0 V
2. f = 1 MHz
0
10
1
10
12
10
8
6
4
, Gate-Source Voltage [ V]
2
GS
V
0
024681012
VDS = 120V
VDS = 300V
VDS = 480V
QG, Total Gate Charge [nC]
3 www.fairchildsemi.com
Note : I※D = 10A
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