Fairchild FQD3N50C, FQU3N50C service manual

FQD3N50C / FQU3N50C

500V N-Channel MOSFET

FQD3N50C / FQU3N50C 500V N-Channel MOSFET

March 2008

®

QFET

Features

• 2.5A, 500V, R

• Low gate charge ( typical 10 nC)

• Low Crss ( typical 8.5pF)

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• RoHS compliant

= 2.5Ω @VGS = 10 V

DS(on)

GS

D-PAK

FQD Series

D

GSD

Absolute Maximum Ratings

Symbol Parameter

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

TJ, T

STG

T

L

Drain-Source Voltage 500 V
Drain Current - Continuous (TC = 25°C) 2.5 A

- Continuous (TC = 100°C) 1.5 A
Drain Current - Pulsed
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C) 35 W

- Derate above 25°C 0.28 W/°C
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.

D

I-PAK

FQU Series

(Note 1)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

G

S

FQD3N50C/FQU3N50C

10 A

200 mJ

2.5 A

3.5 mJ

4.5 V/ns

300 °C

Units

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

R

θJA

* When mounted on the minimum pad size recommended (PCB Mount)

©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FQD3N50C / FQU3N50C Rev. B

Thermal Resistance, Junction-to-Case -- 3.5 °C/W
Thermal Resistance, Junction-to-Ambient* -- 50 °C/W
Thermal Resistance, Junction-to-Ambient -- 110 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FQD3N50C FQD3N50CTM D-PAK 380mm 16mm 2500
FQD3N50C FQD3N50CTF D-PAK 380mm 16mm 2500
FQU3N50C FQU3N50CTU I-PAK - - 70

FQD3N50C / FQU3N50C 500V N-Channel MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV
∆T

J

I

DSS

I

GSSF

I

GSSR

On Characteristics
V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics
C

iss

C

oss

C

rss

Switching Characteristics
t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings
I

S

I

SM

V

SD

t

rr

Q

rr

NOTES:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 58mH, IAS =2.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 2.5A, di/dt ≤200A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temp er at ur e

Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 500 -- -- V

/

DSS

Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.7 -- V/°C
Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V -- -- 1 µA

VDS = 400 V, TC = 125°C -- -- 10 µA
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V
Static Drain-Source On-Resistance VGS = 10 V, ID = 1.25 A -- 2.1 2.5 Ω
Forward Transconductance VDS = 40 V, ID = 1.25 A (Note 4) -- 1.5 -- S

Input Capacitance VDS = 25 V, VGS = 0 V,
Output Capacitance -- 50 65 pF
Reverse Transfer Capacitance -- 8.5 11 pF

f = 1.0 MHz

Turn-On Delay Time VDD = 250 V, ID = 2.5A,
Turn-On Rise Time --

RG = 25 Ω

Turn-Off Delay Time -­Turn-Off Fall Time --

(Note 4, 5)

Total Gate Charge VDS = 400 V, ID = 2.5A,
Gate-Source Charge -­Gate-Drain Charge --

VGS = 10 V

(Note 4, 5)

-- 280 365 pF

--

10 30
25 60
35 80
25 60

--

10 13

1.5

5.5

Maximum Continuous Drain-Source Diode Forward Current -- -- 2.5 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 10 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.5 A -- -- 1.4 V
Reverse Recovery Time VGS = 0 V, IS = 3 A,
Reverse Recovery Charge -- 0.7 --

Starting TJ = 25°C

DSS,

dIF / dt = 100 A/µs (Note 4)

-- 170 -- ns

ns
ns
ns
ns

nC

-- nC

-- nC

µC

FQD3N50C / FQU3N50C Rev. B

2 www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

FQD3N50C / FQU3N50C 500V N-Channel MOSFET

-55°C

Note

1. V

2. 250

= 40V

DS

µs Pulse Tes t

, Drain Current [A]

D

I

10

10

10

V
Top : 15.0 V

10.0 V

1

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V
Bottom : 5.0 V

0

-1

-1

10

GS

0

10

VDS, Drain-Source Voltage [V]

1

10

150°C

Notes :

1. 250

2. T

1

10

µs Pulse Test

= 25°C

C

0

10

, Drain Current [A]

D

I

-1

10

246810

25°C

VGS , Gate-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

8.0

7.5

7.0

6.5

6.0

5.5

5.0

[Ω],

4.5

DS(ON)

4.0

R

3.5

3.0

Drain-Source On-Resistance

2.5

2.0

1.5
0246810

VGS = 10V

VGS = 20V

Note : TJ = 25°C

ID, Drain Current [A]

0

10

150°C

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4

VSD, Source-Drain voltage [V]

25°C

Notes :

1. V

= 0V

GS

2. 250

µs Pulse Test

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

600

400

200

Capacitances [pF]

0

-1

10

VDS, Drain-Source Voltage [V]

FQD3N50C / FQU3N50C Rev. B

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

C

iss

C

oss

Note ;

10

1

1. V

2. f = 1 MHz

C

rss

0

10

= 0 V

GS

12

10

8

VDS = 100V

VDS = 250V

VDS = 400V

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0510

QG, Total Gate Cha r g e [n C]

3 www.fairchildsemi.com

Note : ID = 3A