Fairchild FQD2P40, FQU2P40 service manual
FQD2P40 / FQU2P40
FQD2P40 / FQU2P40
400V P-Chann el MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for electronic lamp ballasts based on the
complementary half bridge topology.
D
S
D-PAK
FQD Series
G
D
S
G
Features
• -1.56A, -400V, R
• Low gate charge ( typical 10 nC)
• Low Crss ( typical 6.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant
I-PAK
FQU Series
= 6.5Ω @VGS = -10 V
DS(on)
G
!!!!
!!!!
October 2008
QFET
S
!!!!
!!!!
●●●●
●●●●
●●●●
●●●●
▶▶▶▶
▶▶▶▶
▲▲▲▲
▲▲▲▲
●●●●
●●●●
!!!!
!!!!
D
®
Absolute Maximum Ratings T
= 25°C unless otherwise noted
C
Symbol Parameter FQD2P40 / FQU2P40 Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
Drain-Source Voltage -400 V
Drain Current
- Continuous (T
- Continuous (T
Drain Current - Pulsed
= 25°C)
C
= 100°C)
C
(Note 1)
-1.56 A
-0.98 A
-6.24 A
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TA = 25°C) *
Power Dissipation (T
= 25°C)
C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
120 mJ
-1.56 A
3.8 mJ
-4.5 V/ns
2.5 W
38 W
- Derate above 25°C 0.3 W/°C
, T
T
J
STG
T
L
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300 °C
Thermal Charac teristics
Symbol Parameter Typ Max Units
R
θJC
R
θJA
R
θJA
* When mounted on the minimum pad size recommended (PCB Mount)
Thermal Resistance, Junction-to-Case -- 3.29 °C/W
Thermal Resistance, Junction-to-Ambient * -- 50 °C/W
Thermal Resistance, Junction-to-Ambient -- 110 °C/W
2008 Fairchild Semiconductor Internationa Rev. A3, October 2008 8
FQD2P40 / FQU2P40
Elerical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
∆BV
/ ∆T
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
DSS
Breakdown Voltage Temperature
DSS
Coefficient
J
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
= 0 V, ID = -250 µA
GS
= -250 µA, Referenced to 25°C
I
D
V
= -400 V, VGS = 0 V
DS
= -320 V, TC = 125°C
V
DS
V
= -30 V, VDS = 0 V
GS
V
= 30 V, VDS = 0 V
GS
-400 -- -- V
-- - -- V/°C
-- -- -1 µA
-- -- -10 µA
-- -- -100 nA
-- -- 100 nA
On Characteristics
V
R
g
FS
GS(th)
DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
= VGS, ID = -250 µA
DS
= -10 V, ID = -0.78 A
V
GS
V
= -50 V, ID = -0.78 A
DS
(Note 4)
-3.0 -- -5.0 V
-- 5.0 6.5 Ω
-- 1.26 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance -- 45 60 pF
Reverse Transfer Capacitance -- 6.5 8.5 pF
V
= -25 V, VGS = 0 V,
DS
f = 1.0 MHz
-- 270 350 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time -- 33 75 ns
Turn-Off Delay Time -- 22 55 ns
Turn-Off Fall Time -- 25 60 ns
Total Gate Charge
Gate-Source Charge -- 2.1 -- nC
Gate-Drain Charge -- 5.5 -- nC
V
= -200 V, ID = -2.0 A,
DD
R
= 25 Ω
G
V
= -320 V, ID = -2.0 A,
DS
V
GS
= -10 V
(Note 4, 5)
(Note 4, 5)
-- 9 30 ns
-- 10 13 nC
Drain-So urce Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 86mH, IAS = -1.56A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ -2.0A, di/dt ≤ 200A/µs, VDD ≤ BV
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2008 Fairchild Semiconductor International
Maximum Continuous Drain-Source Diode Forward Current -- -- -1.56 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- -6.24 A
V
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 0.85 -- µC
Starting TJ = 25°C
DSS,
= 0 V, IS = -1.56 A
GS
= 0 V, IS = -2.0 A,
V
GS
dI
/ dt = 100 A/µs
F
-- -- -5.0 V
-- 250 -- ns
(Note 4)
Rev. A3, October 2008
Typical Characteristics
FQD2P40 / FQU2P40
V
GS
Top : -15. 0 V
-10.0 V
-8.0 V
-7.0 V
0
-6.5 V
10
-6.0 V
Botto m : -5. 5 V
-1
10
, Drain Current [A]
D
-I
-2
10
-1
10
0
10
※
Notes :
1. 250μs Pulse Tes t
℃
2. T
= 25
C
1
10
-VDS, Drain-Source Voltage [V]
VGS = - 10V
VGS = - 20V
※
Note : T
= 25
J
12
10
[Ω],
8
DS(on)
R
6
Drain-Source On-Resistance
4
0123456
-ID , Drai n Curren t [A]
0
10
℃
150
, Drain Current [A]
D
-I
-1
10
246810
℃
25
-55
℃
※
Notes :
1. V
= -50V
DS
2. 250μs Pulse Tes t
-VGS , Gate-Source Voltage [V]
Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i st ics
0
℃
10
℃
25
℃
, Reverse Drain Current [A]
DR
-I
-1
10
150
0.0 0.5 1.0 1.5 2.0 2.5 3.0
※
Notes :
1. V
= 0V
GS
2. 250μs Pulse Tes t
-VSD , Sou r c e-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
600
500
400
300
200
Capacitance [pF]
100
0
-1
10
-VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
©2008 Fairchild Semiconductor International
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
VDS = -80V
VDS = -200V
VDS = -320V
※
Note : I
= -2.0 A
D
Rev. A3, October 2008
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
gd
C
= C
rss
gd
C
iss
C
oss
※
Notes :
1. V
C
0
10
2. f = 1 MHz
rss
1
10
= 0 V
GS
12
10
8
6
4
, Gate-Source Voltage [V]
GS
2
-V
0
024681012
QG, Tota l Gate Charge [n C]
Loading...