Fairchild FQD2N60C, FQU2N60C service manual
FQD2N60C/FQU2N60C 600V N-Channel MOSFET
FQD2N60C/FQU2N60C
600V N-Channel MOSFET
Features
• 1.9A, 600V, R
• Low gate charge (typical 8.5 nC)
• Low Crss (typical 4.3 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant
DS(on)
GS
= 4.7Ω @V
D-PAK
FQD Series
GS
D
= 10 V
GSD
January 2009
QFET
®
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
D
!!!!
!!!!
●●●●
●●●●
◀◀◀◀
◀◀◀◀
▲▲▲▲
▲▲▲▲
●●●●
I-PAK
FQU Series
!!!!
!!!!
G
●●●●
●●●●
●●●●
!!!!
!!!!
S
Absolute Maximum Ratings
Symbol Parameter FQD2N60C / FQU2N60C Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
, T
T
J
STG
T
L
Drain-Source Voltage 600 V
Drain Current - Continuous (TC = 25°C) 1.9 A
- Continuous (T
Drain Current - Pulsed
= 100°C) 1.14 A
C
(Note 1)
7.6 A
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
(Note 2)
(Note 1)
(Note 1)
(Note 3)
120 mJ
1.9 A
4.4 mJ
4.5 V/ns
Power Dissipation (TA = 25°C)* 2.5 W
Power Dissipation (T
= 25°C) 44 W
C
- Derate above 25°C 0.35 W/°C
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
300 °C
1/8" from case for 5 seconds
Thermal Characteristics
Symbol Parameter Typ Max Units
R
θJC
R
θJA
R
θJA
* When mounted on the minimum pad size recommended (PCB Mount)
Thermal Resistance, Junction-to-Case -- 2.87 °C/W
Thermal Resistance, Junction-to-Ambient* -- 50 °C/W
Thermal Resistance, Junction-to-Ambient -- 110 °C/W
©2009 Fairchild Semiconductor Corporation
FQD2N60C/FQU2N60C Rev. B3
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FQD2N60C FQD2N60C D-PAK - -
FDU2N60C FDU2N60C I-PAK - -
FQD2N60C/FQU2N60C 600V N-Channel MOSFET
Electrical Characteristics
TC = 25°C unless other wise not ed
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
∆BV
∆T
I
DSS
I
GSSF
I
GSSR
DSS
J
Drain-Source Breakdown Voltage VGS = 0 V, I
/
Breakdown Voltage Temperature
DSS
I
= 250 µA, Referenced to 25°C -- 0.6 -- V/°C
D
Coefficient
Zero Gate Voltage Drain Current VDS = 600 V, V
V
DS
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteristics
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS = VGS, I
Static Drain-Source
VGS = 10 V, I
On-Resistance
g
FS
Forward Transconductance VDS = 40 V, ID = 0.95 A
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance VDS = 25 V, VGS = 0 V,
Output Capacitance -- 20 25 pF
f = 1.0 MHz
Reverse Transfer Capacitance -- 4.3 5.6 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time VDD = 300 V, ID = 2 A,
R
Turn-On Rise Time -- 25 60 ns
G
Turn-Off Delay Time -- 24 58 ns
Turn-Off Fall Time -- 28 66 ns
Total Gate Charge VDS = 480 V, ID = 2 A,
V
Gate-Source Charge -- 1.3 -- nC
GS
Gate-Drain Charge -- 4.1 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 56mH, I
3. I
≤ 2A, di/dt ≤ 200A/µs, VDD ≤ BV
SD
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Maximum Continuous Drain-Source Diode Forward Current -- -- 1.9 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 7.6 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.9 A -- -- 1.4 V
Reverse Recovery Time VGS = 0 V, IS = 2 A,
dI
Reverse Recovery Charge -- 1.0 -- µC
= 2A, VDD = 50V, R
AS
= 25 Ω, Starting T
G
Starting TJ = 25°C
DSS,
= 25°C
J
F
= 480 V, T
= 25 Ω
= 10 V
/ dt = 100 A/µs
= 250 µA 600 -- -- V
D
= 0 V -- -- 1 µA
GS
= 125°C -- -- 10 µA
C
= 250 µA2.0--4.0V
D
= 0.95 A -- 3.6 4.7 Ω
D
(Note 4)
-- 5.0 -- S
-- 180 235 pF
-- 9 28 ns
(Note 4, 5)
-- 8.5 12 nC
(Note 4, 5)
-- 230 -- ns
(Note 4)
FQD2N60C/FQU2N60C Rev. B3
2
www.fairchildsemi.com
Typical Performance Characterist ics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
-55oC
※
1. VDS = 40V
2. 250µ s Pulse Test
0
10
-1
10
, Drain Current [A]
D
I
-2
10
10
V
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
-1
GS
0
10
VDS, Drain-Source Voltage [V]
Notes :
※
1. 250µ s Pulse Test
= 25
℃
2. T
C
1
10
1
10
150oC
0
10
25oC
, Drain Current [A]
D
I
-1
10
246810
VGS, Gate-Source Volt age [V]
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
12
FQD2N60C/FQU2N60C 600V N-Channel MOSFET
Notes :
10
8
[Ω ],
6
DS(ON)
R
4
Drain-Source On-Resistance
2
0
012345
ID, Drai n Current [A]
VGS = 10V
※
Note : T
VGS = 20V
= 25
J
0
℃
10
150
, Reverse Drain Current [A]
DR
I
-1
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4
℃
Notes :
※
25
℃
1. VGS = 0V
2. 250µ s Pul se Test
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
500
450
400
350
300
250
200
150
Capacitance [pF]
100
50
0
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
gd
C
= C
rss
gd
C
iss
C
oss
Notes ;
※
C
rss
-1
10
0
10
1. VGS = 0 V
2. f = 1 MHz
1
10
VDS, Drain- Source Voltage [V]
12
10
VDS = 300V
8
6
4
, Gate-Source Voltage [V]
GS
2
V
0
0246810
VDS = 480V
QG, Total Gate Charge [nC]
VDS = 120V
※
Note : I
= 2A
D
FQD2N60C/FQU2N60C Rev. B3
3
www.fairchildsemi.com
Loading...