Fairchild FQD20N06, FQU20N06 service manual

FQD20N06 / FQU20N06

January 2009

QFET

FQD20N06 / FQU20N06

60V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.

D

S

D-PAK

= 25°C)

C

G

D

S

= 25°C unless otherwise noted

C

= 25°C)

C

= 100°C)

C

FQD Series

- Continuous (T

- Continuous (T

- Derate above 25°C 0.30 W/°C

G

Absolute Maximum Ratings T

Symbol Parameter FQD20N06 / FQU20N06 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

, T

T

J

STG

T

L

Drain-Source Voltage 60 V
Drain Current

Drain Current - Pulsed
Gate-Source Voltage ± 25 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TA = 25°C) *
Power Dissipation (T

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

Features

• 16.8A, 60V, R

• Low gate charge ( typical 11.5 nC)

• Low Crss ( typical 25 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

o

C maximum junction temperature rating

• 150

• RoHS Compliant

I-PAK

FQU Series

(Note 1)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

= 0.063Ω @ VGS = 10V

DS(on)

!

!

G

16.8 A

10.6 A

67.2 A

155 mJ

16.8 A

3.8 mJ

7.0 V/ns

2.5 W
38 W

300 °C

!

!

D

!

!

"

"

"

"

"

"
"

"

!

!

S

®

Thermal Charac teristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

R

θJA

* When mounted on the minimum pad size recommended (PCB Mount)

©2009 Fairchild Semiconductor Corporation

Thermal Resistance, Junction-to-Case -- 3.28 °C/W
Thermal Resistance, Junction-to-Ambient * -- 50 °C/W
Thermal Resistance, Junction-to-Ambient -- 110 °C/W

Rev. A2. January 2009

FQD20N06 / FQU20N06

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter T e st Conditions Min Typ Max Units

Off Characteristics

BV
∆BV
/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

V

= 0 V, ID = 250 µA

GS

= 250 µA, Referenced to 25°C

I

D

V

= 60 V, VGS = 0 V

DS

= 48 V, TC = 125°C

V

DS

V

= 25 V, VDS = 0 V

GS

V

= -25 V, VDS = 0 V

GS

60 -- -- V

-- 0.07 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V, ID = 8.4 A

V

GS

V

= 25 V, ID = 8.4 A

DS

(Note 4)

2.0 -- 4.0 V

--

0.050 0.063 Ω

--

-- 10 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 170 220 pF
Reverse Transfer Capacitance -- 25 35 pF

V

= 25 V, VGS = 0 V,

DS

f = 1.0 MHz

-- 450 590 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 45 100 ns
Turn-Off Delay Time -- 20 50 ns
Turn-Off Fall Time -- 25 60 ns
Total Gate Charge
Gate-Source Charge -- 3 -- nC
Gate-Drain Charge -- 4.5 -- nC

V

= 30 V, ID = 10 A,

DD

R

= 25 Ω

G

V

= 48 V, ID = 20 A,

DS

V

GS

= 10 V

(Note 4, 5)

(Note 4, 5)

-- 5 20 ns

-- 11.5 15 nC

Drain-So urce Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 640µH, IAS = 16.8A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 20A, di/dt ≤ 300A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2009 Fairchild Semiconductor Corporation

Maximum Continuous Drain-Source Diode Forward Current -- -- 16.8 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 67.2 A

V

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 50 -- nC

Starting TJ = 25°C

DSS,

= 0 V, IS = 16.8 A

GS

= 0 V, IF = 20 A,

V

GS

dI

/ dt = 100 A/µs

F

-- -- 1.5 V

-- 43 -- ns

(Note 4)

Rev. A2. January 2009

Typical Characteristics

FQD20N06 / FQU20N06

V

GS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V
Botto m : 5 .0 V

1

10

, Drain Current [A]

D

I

!

Note s :

1. 250#s Pulse Test

"

2. T

0

10

-1

10

= 25

C

0

10

VDS, Drain-Source Voltage [V]

100

80

],

60

$

VGS = 20V

VGS = 10V

[m

40

DS(ON)

R

20

Drain-Source On-Resistance

0

0 1020304050

!

Note : T

ID, Drain Current [A]

1

10

0

10

"

150

, Drain Current [A]

D

I

"

25

"

-55

-1

1

10

10

246810

VGS, Gate-Source Voltage [V]

!

Notes :

1. V

= 25V

DS

2. 250#s Pulse Test

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i st ics

1

10

0

10

, Reverse Drain Current [A]

DR

"

= 25

J

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4

"

150

"

25

!

Notes :

1. V

= 0V

GS

2. 250#s Pulse Test

VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variati on vs .

Drain Current and Gate Voltage

1200

800

400

Capacitance [pF]

0

-1

10

C

oss

C

iss

C

rss

0

10

VDS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

©2009 Fairchild Semiconductor Corporation

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current and

Temperature

C

= Cgs + Cgd (Cds = sho rted )

iss

C

= Cds + C

oss

gd

C

= C

rss

gd

!

Notes :

1. V

= 0 V

GS

10

2. f = 1 M H z

1

12

10

8

6

4

2

, Gate-Source Voltage [V]

GS

V

0

024681012

QG, Total Gate Charge [nC]

VDS = 30V

VDS = 48V

!

Note : I

= 20A

D

Rev. A2. January 2009