Fairchild FQD1N60C, FQU1N60C service manual

FQD1N60C / FQU1N60C

FQD1N60C / FQU1N60C

600V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.

D

GS

D-PAK

FQD Series

GSD

Features

• 1A, 600V, R

• Low gate charge ( typical 4.8nC)

• Low Crss ( typical 3.5 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• RoHS Compliant

I-PAK

FQU Series

DS(on)

= 11.5Ω @V

!!!!

!!!!

G

GS

January 2009

QFET

= 10 V

D

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Absolute Maximum Ratings T

= 25°C unless otherwise noted

C

Symbol Parameter FQD1N60C / FQU1N60C Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt

P

D

Drain-Source Voltage 600 V

Drain Current

- Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

1A

0.6 A

4A

Gate-Source Voltage ± 30 V

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Power Dissipation (TA = 25°C)*

Power Dissipation (T

= 25°C)

C

(Note 2)

(Note 1)

(Note 1)

(Note 3)

33 mJ

1A

2.8 mJ

4.5 V/ns

2.5 W

28 W

- Derate above 25°C 0.22 W/°C

, T

T

J

STG

T

L

Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300 °C

Thermal Charac teristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

R

θJA

* When mounted on the minimum pad size recommended (PCB Mount)

©2009 Fairchild Semiconductor Corporation

Thermal Resistance, Junction-to-Case -- 4.53 °C/W
Thermal Resistance, Junction-to-Ambient* -- 50 °C/W
Thermal Resistance, Junction-to-Ambient -- 110 °C/W

Rev. A1, January 2009

FQD1N60C / FQU1N60C

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter T e st Conditions Min Typ Max Units

Off Characteristics

BV
∆BV
/ ∆T

I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

V

= 0 V, I

GS

= 250 µA, Referenced to 25°C

I

D

V

= 600 V, VGS = 0 V

DS

= 480 V, TC = 125°C

V

DS

V

= 30 V, VDS = 0 V

GS

V

= -30 V, VDS = 0 V

GS

= 250 µA

D

600 -- -- V

-- 0.6 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V

R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage

Static Drain-Source
On-Resistance

Forward Transconductance

V

= VGS, I

DS

= 10 V, ID = 0.5 A

V

GS

V

= 40 V, ID = 0.5 A

DS

= 250 µA

D

(Note 4)

2.0 -- 4.0 V

-- 9.3 11.5 Ω

-- 0.75 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance

Output Capacitance -- 19 25 pF

Reverse Transfer Capacitance -- 3.5 4.5 pF

V

= 25 V, VGS = 0 V,

DS

f = 1.0 MHz

-- 130 170 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Q

Q

g

gs

gd

Turn-On Delay Time

Turn-On Rise Time -- 21 52 ns

Turn-Off Delay Time -- 13 36 ns

Turn-Off Fall Time -- 27 64 ns

Total Gate Charge

Gate-Source Charge -- 0.7 -- nC

Gate-Drain Charge -- 2.7 -- nC

V

= 300 V, ID = 1.1 A,

DD

R

= 25 Ω

G

(Note 4, 5)

V

= 480 V, ID = 1.1 A,

DS

V

GS

(Note 4, 5)

= 10 V

-- 7 24 ns

-- 4.8 6.2 nC

Drain-So urce Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 59 mH, IAS = 1.1 A, VDD = 50V, R

3. I

SD

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2009 Fairchild Semiconductor Corporation

Maximum Continuous Drain-Source Diode Forward Current -- -- 1 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- 4 A

V

Drain-Source Diode Forward Voltage

Reverse Recovery Time
Reverse Recovery Charge -- 0.53 -- µC

≤ 1.1 A, di/dt ≤ 200A/µs, VDD ≤ BV

= 25 Ω, Starting T

G

Starting TJ = 25°C

DSS,

= 25°C

J

= 0 V, IS = 0.5 A

GS

= 0 V, IS = 1.1 A,

V

GS

dI

/ dt = 100 A/µs

F

-- -- 1.4 V

-- 190 -- ns

(Note 4)

Rev. A1. January 2009

Typical Characteristics

FQD1N60C / FQU1N60C

V

GS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

0

6.5 V

10

6.0 V

5.5 V

5.0 V
Bottom : 4.5 V

-1

10

, Drai n Current [A]

D

I

$

Notes :

1. 250%s Pulse Test

2. T

-2

10

-1

10

0

10

C

1

10

VDS, Drai n-Source Vol tage [V]

30

25

20

],

'

[

15

DS(ON)

R

10

Drain-Source On-Resistance

5

0

0.0 0.5 1.0 1.5 2.0 2.5

VGS = 10V

VGS = 20V

$

Note : T

ID, Drain Curr ent [A]

0

10

150oC

-55oC

25oC

, Drai n Current [ A]

D

I

$

Notes :

= 40V

1. V

&

= 25

-1

10

246810

DS

2. 250%s Pulse Test

VGS, Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i st ics

0

10

150

℃

25

&

= 25

J

, Reverse Drain Current [A]

-1

DR

10

I

0.2 0.4 0.6 0.8 1.0 1.2 1.4

℃

Notes :

※

1. V

2. 250

= 0V

GS

s Pulse Test

μ

VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

250

200

150

100

Capacitance [pF]

50

0

-1

10

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

©2009 Fairchild Semiconductor Corporation

C

iss

C

oss

C

rss

0

10

VDS, Drai n-Sourc e Voltage [V]

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

$

1. V

2. f = 1 MHz

1

10

Notes ;

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

VDS = 480V

$

Note : I

= 1A

D

Rev. A1, January 2009

12

10

VDS = 120V

VDS = 300V

8

= 0 V

GS

6

4

, Gate-Sour ce Voltage [V]

GS

2

V

0

0123456

QG, Total Gate Charge [nC]