Fairchild FQD19N10L, FQU19N10L service manual

FQD19N10L / FQU19N10L

100V LOGIC N-Channel MOSFET

January 2009

QFET

®

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.

FQD19N10L / FQU19N10L

This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as high efficiency

Features

• 15.6A, 100V, R

• Low gate charge ( typical 14 nC)

• Low Crss ( typical 35 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• RoHS Compliant

= 0.1Ω @VGS = 10 V

DS(on)

switching DC/DC converters, and DC motor control.

D

!

!

G

S

D-PAK

FQD Series

G

G

Absolute Maximum Ratings T

I-PAK

D

S

= 25°C unless otherwise noted

C

FQU Series

Symbol Parameter FQD19N10L / FQU19N10L Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

Drain-Source Voltage 100 V
Drain Current

- Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

15.6 A

9.8 A

62.4 A
Gate-Source Voltage ± 20 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TA = 25°C) *
Power Dissipation (T

= 25°C)

C

(Note 2)
(Note 1)
(Note 1)
(Note 3)

220 mJ

15.6 A

5.0 mJ

6.0 V/ns

2.5 W
50 W

- Derate above 25°C 0.4 W/°C

, T

T

J

STG

T

L

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300 °C

!

!

D

!

!

"

"

"

"

"

"
"

"

!

!

S

Thermal Charac teristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

R

θJA

* When mounted on the minimum pad size recommended (PCB Mount)

©2009 Fairchild Semiconductor Corporation

Thermal Resistance, Junction-to-Case -- 2.5 °C/W
Thermal Resistance, Junction-to-Ambient * -- 50 °C/W
Thermal Resistance, Junction-to-Ambient -- 110 °C/W

Rev. A1. January 2009

FQD19N10L / FQU19N10L

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter T e st Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

V

= 0 V, ID = 250 µA

GS

= 250 µA, Referenced to 25°C

I

D

V

= 100 V, VGS = 0 V

DS

= 80 V, TC = 125°C

V

DS

V

= 20 V, VDS = 0 V

GS

V

= -20 V, VDS = 0 V

GS

100 -- -- V

-- 0.09 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

V

= 10 V, ID = 7.8 A

GS

= 5 V, ID = 7.8 A

V

GS

= 30 V, ID = 7.8 A

V

DS

(Note 4)

1.0 -- 2.0 V

0.074

--

0.082

0.10

0.11

-- 14 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 160 210 pF
Reverse Transfer Capacitance -- 35 45 pF

V

= 25 V, VGS = 0 V,

DS

f = 1.0 MHz

-- 670 870 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 410 830 ns
Turn-Off Delay Time -- 20 50 ns
Turn-Off Fall Time -- 140 29 0 n s
Total Gate Charge
Gate-Source Charge -- 2.9 -- nC
Gate-Drain Charge -- 9.2 -- nC

V

= 50 V, ID = 19 A,

DD

R

= 25 Ω

G

= 80 V, ID = 19 A,

V

DS

V

GS

= 5 V

(Note 4, 5)

(Note 4, 5)

-- 14 38 ns

-- 14 18 nC

Ω

Drain-So urce Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 1.35mH, IAS = 15.6A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 19A, di/dt ≤ 300A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2009 Fairchild Semiconductor Corporation

Maximum Continuous Drain-Source Diode Forward Current -- -- 15.6 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 62.4 A

V

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 0.195 -- µC

Starting TJ = 25°C

DSS,

= 0 V, IS = 15.6 A

GS

= 0 V, IS = 19 A,

V

GS

dI

/ dt = 100 A/µs

F

(Note 4)

-- -- 1.5 V

-- 80 -- ns

Rev. A1. January 2009

Typical Characteristics

FQD19N10L / FQU19N10L

V

GS

Top : 10.0 V

8.0 V

6.0 V

5.0 V

4.5 V

4.0 V

1

3.5 V

10

Bottom : 3.0 V

, Drain Current [A]

D

I

0

10

-1

10

0

10

※

Notes :

1. 250μs Pulse Te st

℃

2. T

= 25

C

1

10

VDS, Drain-Source Voltage [V]

VGS = 5V

VGS = 10V

※

Note : T

= 25

J

0.30

0.24

0.18

],

Ω

[

0.12

DS(ON)

R

0.06

Drain-Source On-Resistance

0.00
01530456075

ID, Dra i n Current [A]

1

10

℃

150

0

℃

25

10

, Dra in Curre n t [A ]

D

I

-1

10

0246810

℃

-55

※

Note s :

1. V

= 30V

DS

2. 250μs Pulse Test

VGS , Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i st ics

1

10

0

10

℃

150

, Reverse Drain Current [A]

DR

℃

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

℃

25

※

Notes :

= 0V

1. V

GS

2. 250μs Pulse Tes t

VSD, Sou r c e-Drain voltage [ V ]

Figure 3. On-Resistance Variati on vs .

Drain Current and Gate Voltage

1800

1500

1200

900

600

Capacitance [pF]

300

0

-1

10

10

VDS, Drain-Source Voltage [V]

Figure 5. Capacitance C haracteristics Figure 6. Gate Charg e C haracteristics

©2009 Fairchild Semiconductor Corporation

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

VDS = 50V

VDS = 80V

※

Note : I

= 19A

D

Rev. A1. January 2009

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

C

iss

C

oss

※

Notes :

C

rss

0

1. V

2. f = 1 MH z

1

10

= 0 V

GS

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 5 10 15 20 25

QG, Tota l Gate Charge [n C]