Fairchild FQD17P06 service manual
FQD17P06 / FQU17P06
©2009 Fairchild S emiconductor Corporation Rev. A3.January 2009
FQD17P06 / FQU17P06
60V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as automotive,
DC/DC converters, and high efficiency switching for power
management in portable and battery operated products.
Features
• -12A, -60V, R
DS(on)
= 0.135Ω @VGS = -10 V
• Low gate charge ( typical 21 nC)
• Low Crss ( typical 80 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol Parameter FQD17P06 / FQU17P06 Units
V
DSS
Drain-Source Voltage -60 V
I
D
Drain Current
- Continuous (T
C
= 25°C)
-12 A
- Continuous (T
C
= 100°C)
-7.6 A
I
DM
Drain Current - Pulsed
(Note 1)
-48 A
V
GSS
Gate-Source Voltage ± 25 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
300 mJ
I
AR
Avalanche Current
(Note 1)
-12 A
E
AR
Repetitive Avalanche Energy
(Note 1)
4.4 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
-7.0 V/ns
P
D
Power Dissipation (TA = 25°C) *
2.5 W
Power Dissipation (T
C
= 25°C)
44 W
- Derate above 25°C 0.35 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150 °C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Symbol Parameter Typ Max Units
R
θJC
Thermal Resistance, Junction-to-Case -- 2.85 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient * -- 50 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient -- 110 °C/W
* When mounted on the minimum pad size recommended (PCB Mount)
I-PAK
FQU Series
D-PAK
FQD Series
G
S
D
G
S
D
!!!!
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!!!!
!!!!
!!!!
S
D
G
January 2009
QFET
®
• RoHS Compliant
FQD17P06 / FQU17P06
Rev. A3.January 2009©2009 Fairchild S emiconductor Corporation
Elerical Characteristics T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 2.4mH, I
AS
= -12A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD! -17A, di/dt ! 300A/µs, VDD! BV
DSS,
Starting TJ = 25°C
4. Pulse Test : Pulse width ! 300µs, Duty cycle ! 2%
5. Essentially independent of operating temperature
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, ID = -250 µA
-60 -- -- V
∆BV
DSS
/ ∆T
J
Breakdown Voltage Temperature
Coefficient
I
D
= -250 µA, Referenced to 25°C
-- -0.06 -- V/°C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= -60 V, VGS = 0 V
-- -- -1 µA
V
DS
= -48 V, TC = 125°C
-- -- -10 µA
I
GSSF
Gate-Body Leakage Current, Forward
V
GS
= -25 V, VDS = 0 V
-- -- -100 nA
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= 25 V, VDS = 0 V
-- -- 100 nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= VGS, ID = -250 µA
-2.0 -- -4.0 V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= -10 V, ID = -6.0 A
-- 0.11 0.135 Ω
g
FS
Forward Transconductance
V
DS
= -30 V, ID = -6.0 A
-- 8.7 -- S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= -25 V, VGS = 0 V,
f = 1.0 MHz
-- 690 900 pF
C
oss
Output Capacitance -- 325 420 pF
C
rss
Reverse Transfer Capacitance -- 80 105 pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
VDD = -30 V, ID = -8.5 A,
R
G
= 25 Ω
-- 13 35 ns
t
r
Turn-On Rise Time -- 100 210 ns
t
d(off)
Turn-Off Delay Time -- 22 55 ns
t
f
Turn-Off Fall Time -- 60 130 ns
Q
g
Total Gate Charge
V
DS
= -48 V, ID = -17 A,
V
GS
= -10 V
-- 21 27 nC
Q
gs
Gate-Source Charge -- 4.2 -- nC
Q
gd
Gate-Drain Charge -- 10 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current -- -- -12 A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current -- -- -48 A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, IS = -12 A
-- -- -4.0 V
t
rr
Reverse Recovery Time
V
GS
= 0 V, IS = -17 A,
dI
F
/ dt = 100 A/µs
-- 92 -- ns
Q
rr
Reverse Recovery Charge -- 0.32 -- µC
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
FQD17P06 / FQU17P06
©2009 Fairchild S emiconductor Corporation Rev. A3. Januaary 2 009
0 10 20 30 40 50 60
0.00
0.04
0.08
0.12
0.16
0.20
0.24
0.28
0.32
0.36
0.40
$
Note : T
J
= 25
%
VGS = - 20V
VGS = - 10V
R
DS(on)
[Ω],
Drain-Source On-Resistance
-ID , Drain Current [A]
10
-1
10
0
10
1
10
0
10
1
V
GS
Top : - 15.0 V
- 10.0 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom : - 4.5 V
$
Notes :
1. 250&s Pulse Test
2. T
C
= 25
%
-I
D
, Drain Current [A]
-VDS, Drain-Source Voltage [V]
0 4 8 12 16 20 24
0
2
4
6
8
10
12
VDS = -30V
VDS = -48V
$
Note : I
D
= -17 A
-V
GS
, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
10
-1
10
0
10
1
0
200
400
600
800
1000
1200
1400
1600
1800
2000
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
$
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Capacitance [pF]
VDS, Drain-Source Voltage [V]
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
10
-1
10
0
10
1
150
%
$
Notes :
1. VGS = 0V
2. 250&s Pulse Test
25
%
-I
DR
, Reverse Drain Current [A]
-VSD , Source-Drain Voltage [V]
2 4 6 8 10
10
-1
10
0
10
1
150
%
25
%
-55
%
$
Notes :
1. V
DS
= -30V
2. 250&s Pulse Test
-I
D
, Drain Current [A]
-VGS , Gate-Source Voltage [V]
Typical Characteristics
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics
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