Fairchild FQD17P06 service manual

FQD17P06 / FQU17P06

60V P-Channel MOSFET

General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

Features

• -12A, -60V, R

DS(on)

= 0.135Ω @VGS = -10 V

• Low gate charge ( typical 21 nC)

• Low Crss ( typical 80 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Absolute Maximum Ratings T

= 25°C unless otherwise noted

Thermal Characteristics

Symbol Parameter FQD17P06 / FQU17P06 Units

DSS

Drain-Source Voltage -60 V

Drain Current

- Continuous (T

= 25°C)

-12 A

- Continuous (T

= 100°C)

-7.6 A

Drain Current - Pulsed

(Note 1)

-48 A

GSS

Gate-Source Voltage ± 25 V

Single Pulsed Avalanche Energy

(Note 2)

300 mJ

Avalanche Current

(Note 1)

-12 A

Repetitive Avalanche Energy

(Note 1)

4.4 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3)

-7.0 V/ns

Power Dissipation (TA = 25°C) *

2.5 W

Power Dissipation (T

= 25°C)

44 W

- Derate above 25°C 0.35 W/°C

, T

STG

Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

300 °C

Symbol Parameter Typ Max Units

θJC

Thermal Resistance, Junction-to-Case -- 2.85 °C/W

θJA

Thermal Resistance, Junction-to-Ambient * -- 50 °C/W

θJA

Thermal Resistance, Junction-to-Ambient -- 110 °C/W

* When mounted on the minimum pad size recommended (PCB Mount)

I-PAK

FQU Series

D-PAK

FQD Series

!!!!

!!!! !!!!

""""

####

!!!!

!!!! !!!!

""""

####

!!!!

January 2009

QFET

• RoHS Compliant

FQD17P06 / FQU17P06

Elerical Characteristics T

= 25°C unless otherwise noted

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 2.4mH, I

= -12A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD! -17A, di/dt ! 300A/µs, VDD! BV

DSS,

Starting TJ = 25°C

4. Pulse Test : Pulse width ! 300µs, Duty cycle ! 2%

5. Essentially independent of operating temperature

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

DSS

Drain-Source Breakdown Voltage

= 0 V, ID = -250 µA

-60 -- -- V

∆BV

DSS

/ ∆T

Breakdown Voltage Temperature Coefficient

= -250 µA, Referenced to 25°C

-- -0.06 -- V/°C

DSS

Zero Gate Voltage Drain Current

= -60 V, VGS = 0 V

-- -- -1 µA

= -48 V, TC = 125°C

-- -- -10 µA

GSSF

Gate-Body Leakage Current, Forward

= -25 V, VDS = 0 V

-- -- -100 nA

GSSR

Gate-Body Leakage Current, Reverse

= 25 V, VDS = 0 V

-- -- 100 nA

On Characteristics

GS(th)

Gate Threshold Voltage

= VGS, ID = -250 µA

-2.0 -- -4.0 V

DS(on)

Static Drain-Source On-Resistance

= -10 V, ID = -6.0 A

-- 0.11 0.135 Ω

Forward Transconductance

= -30 V, ID = -6.0 A

-- 8.7 -- S

Dynamic Characteristics

iss

Input Capacitance

= -25 V, VGS = 0 V,

f = 1.0 MHz

-- 690 900 pF

oss

Output Capacitance -- 325 420 pF

rss

Reverse Transfer Capacitance -- 80 105 pF

Switching Characteristics

d(on)

Turn-On Delay Time

VDD = -30 V, ID = -8.5 A, R

= 25 Ω

-- 13 35 ns

Turn-On Rise Time -- 100 210 ns

d(off)

Turn-Off Delay Time -- 22 55 ns

Turn-Off Fall Time -- 60 130 ns

Total Gate Charge

= -48 V, ID = -17 A,

= -10 V

-- 21 27 nC

Gate-Source Charge -- 4.2 -- nC

Gate-Drain Charge -- 10 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain-Source Diode Forward Current -- -- -12 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- -48 A

Drain-Source Diode Forward Voltage

= 0 V, IS = -12 A

-- -- -4.0 V

Reverse Recovery Time

= 0 V, IS = -17 A,

/ dt = 100 A/µs

-- 92 -- ns

Reverse Recovery Charge -- 0.32 -- µC

(Note 4)

(Note 4, 5)

(Note 4)

FQD17P06 / FQU17P06

0 10 20 30 40 50 60

0.00

0.04

0.08

0.12

0.16

0.20

0.24

0.28

0.32

0.36

0.40

Note : T

= 25

VGS = - 20V

VGS = - 10V

DS(on)

[Ω],

Drain-Source On-Resistance

-ID , Drain Current [A]

-1

Top : - 15.0 V

- 10.0 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V Bottom : - 4.5 V

Notes :

1. 250&s Pulse Test

2. T

= 25

-I

, Drain Current [A]

-VDS, Drain-Source Voltage [V]

0 4 8 12 16 20 24

VDS = -30V

VDS = -48V

Note : I

= -17 A

-V

, Gate-Source Voltage [V]

QG, Total Gate Charge [nC]

-1

200

400

600

800

1000

1200

1400

1600

1800

2000

iss

= Cgs + Cgd (Cds = shorted)

oss

= Cds + C

rss

= C

Notes :

1. V

= 0 V

2. f = 1 MHz

rss

oss

iss

Capacitance [pF]

VDS, Drain-Source Voltage [V]

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

-1

150

Notes :

1. VGS = 0V

2. 250&s Pulse Test

-I

, Reverse Drain Current [A]

-VSD , Source-Drain Voltage [V]

2 4 6 8 10

-1

150

-55

Notes :

1. V

= -30V

2. 250&s Pulse Test

-I

, Drain Current [A]

-VGS , Gate-Source Voltage [V]

Typical Characteristics

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

FQD17P06 / FQU17P06

1 0

-5

1 0

-4

1 0

-3

1 0

-2

1 0

-1

1 0

-2

1 0

-1

1 0

N o te s :

1 . Z

(t ) = 2. 85 %/W M a x.

2 . D u ty F a c to r, D =t

1/t2

3 . TJM - TC = PDM * Z

(t )

s in gl e p u ls e

D = 0. 5

0 .0 2

0 .2

0 .0 5

0 .1

0 .0 1

( t), T h e r m a l R e s p o n s e

t1, S q u a r e W a v e P u ls e D u ra t i o n [ s e c ]

25 50 75 100 125 150

-I

, Drain Current [A]

TC, Case Temperature [%]

-1

10 ms

1 ms

100 µs

Operation in This Area is Limited by R

DS(on)

Notes :

1. T

= 25 oC

2. T

= 150 oC

3. Single Pulse

-I

, Drain Current [A]

-VDS, Drain-Source Voltage [V]

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

Notes :

1. V

= -10 V

2. I

= -6.0 A

DS(ON)

, (Normalized)

Drain-Source On-Resistance

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

Notes :

1. V

= 0 V

2. ID = -250 &A

-BV

DSS

, (Normalized)

Drain-Source Breakdown Voltage

TJ, Junction Temperature [oC]

Typical Characteristics (Continued)

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

Figure 7. Breakdown Voltage Variation

vs. Temperature

Figure 8. On-Resistance Variation

vs. Temperature

Figure 11. Transient Thermal Response Curve

FQD17P06 / FQU17P06

Charge

-10V

-3mA

DUT

300nF

50K

(

200nF

12V

Same Type

as DUT

Charge

-10V

-3mA

DUT

300nF

50K

(

200nF

12V

Same Type

as DUT

10%

90%

d(on)tr

off

d(off)

-10V

DUT

10%

90%

d(on)tr

off

d(off)

-10V

DUT

= L I

---2

-------------------BV

DSS

- V

DSS

(t)

Time

-10V

DUT

= L I

---2

= L I

---2

-------------------BV

DSS

- V

DSS

(t)

Time

-10V

DUT

IDI

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

FQD17P06 / FQU17P06

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

Driver

Compliment of DUT

(N-Channel)

• dv/dt controlled by R

• ISDcontrolled by pulse period

10V

( Driver )

( DUT )

Body Diode

Forward Voltage Drop

IFM, Body Diode Forward Current

Body Diode Reverse Current

Body Diode Recovery dv/dt

di/dt

D =

Gate Pulse Width Gate Pulse Period

--------------------------

DUT

Driver

Compliment of DUT

(N-Channel)

• dv/dt controlled by R

• ISDcontrolled by pulse period

10V

( Driver )

( DUT )

Body Diode

Forward Voltage Drop

IFM, Body Diode Forward Current

Body Diode Reverse Current

Body Diode Recovery dv/dt

di/dt

D =

Gate Pulse Width Gate Pulse Period

--------------------------

D =

Gate Pulse Width Gate Pulse Period

--------------------------

FQD17P06 / FQU17P06

Rev. A3.January 200 9

D-PAK

Package Dimensions

FQD17P06 / FQU17P06

Package Dimensions

(Continued)

6.60 ±0.20

0.76 ±0.10

MAX0.96

2.30TYP

[2.30±0.20]

2.30TYP

[2.30±0.20]

0.60 ±0.20

0.80 ±0.10

1.80 ±0.20

9.30 ±0.30

16.10 ±0.30

6.10 ±0.20

0.70 ±0.20

5.34 ±0.20

0.50 ±0.10

2.30 ±0.20

(0.50) (0.50)(4.34)

IPAK

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As used herein:

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Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I61

Fairchild FQD17P06 service manual

Specifications and Main Features

Frequently Asked Questions

User Manual