Fairchild FQD16N25C service manual

FQD16N25C 250V N-Channel MOSFET

FQD16N25C

250V N-Channel MOSFET

Features

• 16A, 250V, R

• Low gate charge ( typical 41 nC)

• Low Crss ( typical 68 pF)

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• RoHS Compliant

= 0.27Ω @VGS = 10 V

DS(on)

D-PAK

FQD Series

January 2009

QFET

Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switching DC/DC converters, switch mode power
supplies, DC-AC converters for uninterrupted power supplies
and motor controls.

D

G

S

®

Absolute Maximum Ratings

Symbol Parameter FQD16N25C Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt

P

D

T

, T

J

STG

T

L

Drain-Source Voltage 250 V

Drain Current - Continuous (TC = 25°C) 16 A

- Continuous (T

Drain Current - Pulsed
Gate-Source Voltage ± 30 V

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Power Dissipation (TC = 25°C) 160 W

- Derate above 25°C 1.28 W/°C

Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

= 100°C) 10.1 A

C

(Note 1)

(Note 2)

(Note 1)

(Note 1)

(Note 3)

64 A

432 mJ

16 A

160 mJ

5.5 V/ns

300 °C

Thermal Characteristics

Symbol Parameter FQD16N25C Units

R

θJC

R

θJA

Thermal Resistance, Junction-to-Case 0.78 °C/W
Thermal Resistance, Junction-to-Ambient 110 °C/W

©2009 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FQD16N25C Rev. A1

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FQD16N25C FQD16N25CTM D-PAK 380mm 16mm 2,500

FQD16N25C FQD16N25CTF D-PAK 380mm 16mm 2,000

FQD16N25C 250V N-Channel MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV
∆T

J

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

NOTES:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 2.7mH, IAS = 16A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 16A, di/dt ≤300A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 250 -- -- V

/

DSS

Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.31 -- V/°C

Zero Gate Voltage Drain Current VDS = 250 V, VGS = 0 V -- -- 10 µA

V

= 200 V, TC = 125°C -- -- 100 µA

DS

Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA

Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250 µA2.0--4.0V

Static Drain-Source On-Resistance VGS = 10 V, ID = 8A -- 0.22 0.27 Ω

Forward Transconductance VDS = 40 V, ID =8 A (Note 4) -- 10.5 -- S

Input Capacitance VDS = 25 V, VGS = 0 V,

Output Capacitance -- 170 220 pF

Reverse Transfer Capacitance -- 68 89 pF

f = 1.0 MHz

Turn-O n Delay Time VDD = 125 V, ID = 16A,

R

= 25 Ω

Turn-O n Rise Time --

Turn-Off Delay Time --

G

(Note 4, 5)

Turn-Off Fall Time --

Total Gate Charge VDS = 200 V, ID = 16A,

= 10 V

V

Gate-Source Charge --

Gate-Drain Charge --

GS

(Note 4, 5)

-- 830 1080 pF

--

15 40

130 270

135 280

105 220

--

41 53.5

5.6

22.7

-- nC

-- nC

Maximum Continuous Drain-Source Diode Forward Current -- -- 16 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- 64 A

Drain-Source Diode Forward Voltage VGS = 0 V, IS = 16 A -- -- 1.5 V

Reverse Recovery Time VGS = 0 V, IS = 16 A,

/ dt = 100 A/µs (Note 4)

dI

Reverse Recovery Charge -- 2.47 --

Starting TJ = 25°C

DSS,

F

-- 260 -- ns

ns

ns

ns

ns

nC

µC

FQD16N25C Rev. A1

2 www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

FQD16N25C 250V N-Channel MOSFET

-55oC

Notes :※

1. VDS = 40V

2. 250µ s Pulse Test

10

10

, Drain Current [A]

D

I

-1

10

V
Top : 15.0 V

10.0 V

8.0 V

7.0 V

1

6.5 V

6.0 V

5.5 V

5.0 V
Bottom : 4.5 V

0

-1

10

GS

0

10

VDS, Drain-Source Voltage [V]

Notes :※

1. 250µ s Pulse Test

= 25℃

2. T

C

1

10

1

10

150oC

25oC

0

10

, Drain Current [A]

D

I

-1

10

246810

VGS, Gate-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

1.5

1.0

[Ω ],

DS(ON)

R

0.5

VGS = 10V

VGS = 20V

Drain-Source On-Resistance

Note : T※J = 25℃

0.0
0 1020304050

ID, Drai n Cur rent [A]

1

10

0

10

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

150℃

VSD, Source-Drain voltage [V]

25℃

Notes :※

1. VGS = 0V

2. 250µ s Pulse Tes t

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

3000

2500

2000

1500

1000

Capacitance [pF]

500

FQD16N25C Rev. A1

0

10

Notes :※

1. VGS = 0 V

2. f = 1 MHz

-1

C
C
C

C

iss

C

oss

C

rss

0

10

VDS, Drain- Source Voltage [ V]

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

oss

gd

= C

rss

gd

1

10

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 1020304050

QG, Total Gate Charge [nC]

3 www.fairchildsemi.com

VDS = 50V

VDS = 125V

VDS = 200V

Note : I※D = 15.6A