Fairchild FQD13N06L, FQU13N06L service manual
FQD13N06L / FQU13N06L
January 2009
QFET
FQD13N06L / FQU13N06L
60V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.
D
S
D-PAK
= 25°C)
C
G
D
S
= 25°C unless otherwise noted
C
= 25°C)
C
= 100°C)
C
FQD Series
- Continuous (T
- Continuous (T
- Derate above 25°C 0.22 W/°C
G
Absolute Maximum Ratings T
Symbol Parameter FQD13N06L / FQU13N06L Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
, T
T
J
STG
T
L
Drain-Source Voltage 60 V
Drain Current
Drain Current - Pulsed
Gate-Source Voltage ± 20 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TA = 25°C) *
Power Dissipation (T
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Features
• 11A, 60V, R
• Low gate charge ( typical 4.8 nC)
• Low Crss ( typical 17 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• RoHS Compliant
I-PAK
FQU Series
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
= 0.115Ω @V
DS(on)
= 10 V
GS
D
!
!
"
"
"
"
!
!
"
!
!
G
"
"
"
!
!
S
11 A
7A
44 A
90 mJ
11 A
2.8 mJ
7.0 V/ns
2.5 W
28 W
300 °C
®
Thermal Charac teristics
Symbol Parameter Typ Max Units
R
θJC
R
θJA
R
θJA
* When mounted on the minimum pad size recommended (PCB Mount)
©2009 Fairchild Semiconductor Corporation Rev. A2. January 2009
Thermal Resistance, Junction-to-Case -- 4.5 °C/W
Thermal Resistance, Junction-to-Ambient * -- 50 °C/W
Thermal Resistance, Junction-to-Ambient -- 110 °C/W
FQD13N06L / FQU13N06L
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter T e st Conditions Min Typ Max Units
Off Characteristics
BV
∆BV
/ ∆T
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
DSS
Breakdown Voltage Temperature
DSS
Coefficient
J
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
= 0 V, I
GS
= 250 µA, Referenced to 25°C
I
D
V
= 60 V, VGS = 0 V
DS
= 48 V, TC = 150°C
V
DS
V
= 20 V, VDS = 0 V
GS
V
= -20 V, VDS = 0 V
GS
= 250 µA
D
60 -- -- V
-- 0.05 -- V/°C
-- -- 1 µA
-- -- 10 µA
-- -- 100 nA
-- -- -100 nA
On Characteristics
V
R
g
FS
GS(th)
DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
= VGS, I
DS
V
GS
V
GS
V
DS
D
= 10 V, ID = 5.5 A
= 5 V, ID = 5.5 A
= 25 V, ID = 5.5 A
= 250 µA
(Note 4)
1.0 -- 2.5 V
----0.092
0.115
0.115
0.145
-- 6 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance -- 95 125 pF
Reverse Transfer Capacitance -- 17 23 pF
V
= 25 V, VGS = 0 V,
DS
f = 1.0 MHz
-- 270 350 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time -- 90 190 ns
Turn-Off Delay Time -- 20 50 ns
Turn-Off Fall Time -- 40 90 ns
Total Gate Charge
Gate-Source Charge -- 1.6 -- nC
Gate-Drain Charge -- 2.7 -- nC
V
= 30 V, ID = 6.8 A,
DD
R
= 25 Ω
G
= 48 V, ID = 13.6 A,
V
DS
V
GS
= 5 V
(Note 4, 5)
(Note 4, 5)
-- 8 25 ns
-- 4.8 6.4 nC
Ω
Drain-So urce Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 870µH, I
3. I
≤ 13.6A, di/dt ≤ 300A/µs, V
SD
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Maximum Continuous Drain-Source Diode Forward Current -- -- 11 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 44 A
V
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 45 -- nC
= 11A, VDD = 25V, R
AS
= 25 Ω, Starting T
G
≤ BV
DD
DSS,
= 25°C
J
Starting TJ = 25°C
= 0 V, IS = 11 A
GS
= 0 V, IS = 13.6 A,
V
GS
dI
/ dt = 100 A/µs
F
-- -- 1.5 V
-- 45 -- ns
(Note 4)
Rev. A2. January 2009©2009 Fairchild Semiconductor Corporation
Typical Characteristics
FQD13N06L / FQU13N06L
],
$
[m
R
, Gate- Source Vol tage [V]
!
Not es :
1. V
= 25V
DS
2. 250#s Pulse Test
10
, Drai n Current [A]
D
I
10
V
Top : 10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
1
Bottom : 3.0 V
0
-1
10
GS
10
VDS, Drai n-Source Voltage [V]
!
Notes :
1. 250#s Pulse Test
"
2. T
= 25
C
0
1
10
0
10
"
150
, Drai n Current [ A]
D
I
"
25
"
-1
1
10
10
0246810
-55
V
GS
Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i st ics
300
1
200
VGS = 5V
10
VGS = 10V
DS(ON)
100
0
10
Drain-Source On-Resist ance
0
0 10203040
!
Note : T
"
= 25
J
ID, Drain Current [A]
Figure 3. On-Resistance Variati on vs .
Drain Current and Gate Voltage
, Reverse Drain Current [A]
DR
I
-1
10
0.2 0.4 0. 6 0. 8 1. 0 1.2 1.4 1.6
"
150
"
25
VSD, Source-Drai n voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
!
Not es :
1. V
2. 250#s Pulse Test
and Temperature
800
600
C
oss
C
400
Capacit ance [pF]
200
0
-1
10
iss
C
rss
VDS, Drai n-Source Voltage [ V]
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
gd
C
= C
rss
gd
!
Notes :
1. V
= 0 V
GS
2. f = 1 MHz
0
10
1
10
12
10
8
6
4
2
, Gate-Source Voltage [V]
GS
V
0
0246810
QG, Total Gate Charge [nC]
VDS = 30V
VDS = 48V
!
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
= 0V
GS
Note : I
= 13.6A
D
©2009 Fairchild Semiconductor Corporation Rev. A2.January 2009
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