Fairchild FQD11P06, FQU11P06 service manual
FQD11P06 / FQU11P06
FQD11P06 / FQU11P06
60V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as automotive,
DC/DC converters, and high efficiency switching for power
management in portable and battery operated products.
D
GS
D-PAK
FQD Series
GSD
Features
• -9.4A, -60V, R
• Low gate charge ( typical 13 nC)
• Low Crss ( typical 45 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant
I-PAK
FQU Series
= 0.185Ω @V
DS(on)
G
!!!!
!!!!
January 2009
QFET
= -10 V
GS
S
!!!!
!!!!
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▶▶▶▶
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▲▲▲▲
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!!!!
D
®
Absolute Maximum Ratings
TC = 25°C unle ss otherw ise note d
Symbol Parameter FQD11P06 / FQU1 1P06 Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
Drain-Source Voltage -60 V
Drain Current
- Continuous (T
- Continuous (T
Drain Current - Pulsed
= 25°C)
C
= 100°C)
C
(Note 1)
-9.4 A
-5.95 A
-37.6 A
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TA = 25°C) *
Power Dissipation (T
= 25°C)
C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
160 mJ
-9.4 A
3.8 mJ
-7.0 V/ns
2.5 W
38 W
- Derate above 25°C 0.3 W/°C
, T
T
J
STG
T
L
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Thermal Characteristics
Symbol Parameter Typ Max Units
R
θJC
R
θJA
R
θJA
* When mounted on the minimum pad size recommended (PCB Mount)
Thermal Resistance, Junction-to-Case -- 3.28 °C/W
Thermal Resistance, Junction-to-Ambient * -- 50 °C/W
Thermal Resistance, Junction-to-Ambient -- 110 °C/W
©2009 Fairchild Semiconductor Corporation
Rev. C6. January 2009
FQD11P06 / FQU11P06
Elerical Characteristics
TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
/ ∆T
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
= 0 V, I
GS
= -250 µA, Referenced to 25°C
I
D
V
= -60 V, VGS = 0 V
DS
= -48 V, TC = 125°C
V
DS
V
= -25 V, VDS = 0 V
GS
V
= 25 V, VDS = 0 V
GS
= -250 µA
D
-60 -- -- V
-- -0.07 -- V/°C
-- -- -1 µA
-- -- -10 µA
-- -- -100 nA
-- -- 100 nA
On Characteristics
V
R
g
FS
GS(th)
DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
= VGS, I
DS
V
GS
V
DS
D
= -10 V, ID = -4.7 A
= -30 V, ID = -4.7 A
= -250 µA
(Note 4)
-2.0 -- -4.0 V
-- 0.15 0.185 Ω
-- 4.9 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance -- 195 250 pF
Reverse Transfer Capacitance -- 45 60 pF
V
= -25 V, VGS = 0 V,
DS
f = 1.0 MHz
-- 420 550 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time -- 40 90 ns
Turn-Off Delay Time -- 15 40 ns
Turn-Off Fall Time -- 45 100 ns
Total Gate Charge
Gate-Source Charge -- 2.0 -- nC
Gate-Drain Charge -- 6.3 -- nC
V
= -30 V, ID = -5.7 A,
DD
R
= 25 Ω
G
(Note 4, 5)
V
= -48 V, ID = -11.4 A,
DS
V
= -10 V
GS
(Note 4, 5)
-- 6.5 25 ns
-- 13 17 nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 2.1mH, I
3. I
SD
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2009 Fairchild Semiconductor Corporation
Maximum Continuous Drain-Source Diode Forward Current -- -- -9.4 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- -37.6 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 0.26 -- µC
= -9.4A, VDD = -25V, R
AS
≤ -11.4A, di/dt ≤ 300A/µs, VDD ≤ BV
= 25 Ω, Starting T
G
Starting TJ = 25°C
DSS,
= 25°C
J
V
= 0 V, IS = -9.4 A
GS
= 0 V, IS = -11.4 A,
V
GS
dI
/ dt = 100 A/µs
F
-- -- -4.0 V
-- 83 -- ns
(Note 4)
Rev. C6,January 2009
Typical Characteristics
FQD11P06 / FQU11P06
V
GS
Top : - 15.0 V
- 10.0 V
- 8.0 V
1
- 7.0 V
10
- 6.0 V
- 5.5 V
- 5.0 V
Bottom : - 4.5 V
0
10
, Drain Current [A]
D
-I
-1
10
-1
10
0
10
Notes :
※
1. 250µ s Pulse Test
2. T
= 25
℃
C
1
10
-VDS, Drain-Source Voltage [V]
0.8
0.6
],
Ω
[
0.4
DS(on)
R
0.2
Drain-Source On-Resistance
0.0
0 1020304050
VGS = - 10V
VGS = - 20V
※
Note : T
= 25
J
-ID , Drain Current [A]
1
10
150
℃
0
10
25
℃
, Drain Current [A]
D
-I
-1
10
246810
-55
℃
Notes :※
1. VDS = -30V
2. 250µ s Pulse Test
-VGS , Gate- Source Voltage [ V]
Figure 2. Transfer CharacteristicsFigure 1. On-Region Charact er i st ics
1
10
℃
0
10
, Reverse Drain Current [A]
DR
-I
-1
10
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
25
℃
150
℃
Notes :※
1. VGS = 0V
2. 250µ s Pulse Test
-VSD , Source- Drain Vol tage [ V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1200
1000
800
600
400
Capacitance [pF]
200
0
-1
10
-VDS, Drai n-Source Vol tage [ V]
Figure 5. Capacitance Characteristi cs Fig ure 6. Gate Charge Cha ra ct eri stics
©2009 Fairchild Semiconductor Corporation
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
VDS = -30V
VDS = -48V
Note : I
※
= -11.4 A
D
Rev. C6, January 2009
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
gd
C
= C
rss
gd
C
oss
C
iss
C
rss
0
10
Notes :
※
1. VGS = 0 V
2. f = 1 MHz
1
10
12
10
8
6
4
, Gate-Source Voltage [V]
GS
2
-V
0
0 2 4 6 8 10 12 14
QG, Total Gate Charge [nC]
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