Fairchild FQD10N20C, FQU10N20C service manual
FQD10N20C / FQU10N20C
FQD10N20C / FQU10N20C
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supplies and motor controls.
D
GS
D-PAK
FQD Series
GSD
Features
• 7.8A, 200V, R
• Low gate charge ( typical 20 nC)
• Low Crss ( typical 40.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant
I-PAK
FQU Series
DS(on)
= 0.36Ω @V
!!!!
!!!!
G
January 2009
QFET
= 10 V
GS
D
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S
®
Absolute Maximum Ratings T
= 25°C unless otherwise noted
C
Symbol Parameter FQD10N20C / FQU10N20C Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
Drain-Source Voltage 200 V
Drain Current
- Continuous (T
- Continuous (T
Drain Current - Pulsed
= 25°C)
C
= 100°C)
C
(Note 1)
7.8 A
5.0 A
31.2 A
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TC = 25°C)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
210 mJ
7.8 A
5.0 mJ
5.5 V/ns
50 W
- Derate above 25°C 0.4 W/°C
, T
T
J
STG
T
L
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Thermal Charac teristics
Symbol Parameter Typ Max Units
R
θJC
R
θJA
R
θJA
* When mounted on the minimum pad size recommended (PCB Mount)
Thermal Resistance, Junction-to-Case -- 2.5 °C/W
Thermal Resistance, Junction-to-Ambient* -- 50 °C/W
Thermal Resistance, Junction-to-Ambient -- 110 °C/W
©2009 Fairchild Semiconductor Corporation
Rev. A2, January 2009
FQD10N20C / FQU10N20C
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter T e st Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
/ ∆T
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
= 0 V, I
GS
= 250 µA, Referenced to 25°C
I
D
V
= 200 V, VGS = 0 V
DS
= 160 V, TC = 125°C
V
DS
V
= 30 V, VDS = 0 V
GS
V
= -30 V, VDS = 0 V
GS
= 250 µA
D
200 -- -- V
-- 0.28 -- V/°C
-- -- 10 µA
-- -- 100 µA
-- -- 100 nA
-- -- -100 nA
On Characteristics
V
R
g
FS
GS(th)
DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
= VGS, I
DS
= 10 V, ID = 3.9 A
V
GS
V
= 40 V, ID = 3.9 A
DS
= 250 µA
D
(Note 4)
2.0 -- 4.0 V
-- 0.29 0.36 Ω
-- 5.6 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance -- 97 125 pF
Reverse Transfer Capacitance -- 40.5 53 pF
V
= 25 V, VGS = 0 V,
DS
f = 1.0 MHz
-- 395 510 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time -- 92 190 ns
Turn-Off Delay Time -- 70 150 ns
Turn-Off Fall Time -- 72 160 ns
Total Gate Charge
Gate-Source Charge -- 3.1 -- nC
Gate-Drain Charge -- 10.5 -- nC
V
= 100 V, ID = 9.5 A,
DD
R
= 25 Ω
G
(Note 4, 5)
V
= 160 V, ID = 9.5 A,
DS
V
GS
(Note 4, 5)
= 10 V
-- 11 30 ns
-- 20 26 nC
Drain-So urce Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 5.2mH, I
3. I
SD
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2009 Fairchild Semiconductor Corporation
Maximum Continuous Drain-Source Diode Forward Current -- -- 7.8 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 31.2 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 0.97 -- µC
= 7.8A, VDD = 50V, R
AS
≤ 9.5A, di/dt ≤ 300A/µs, VDD ≤ BV
= 25 Ω, Starting T
G
Starting TJ = 25°C
DSS,
= 25°C
J
V
= 0 V, IS = 7.8 A
GS
= 0 V, IS = 9.5 A,
V
GS
dI
/ dt = 100 A/µs
F
-- -- 1.5 V
-- 158 -- ns
(Note 4)
Rev. A2, January 2009
Typical Characteristics
FQD10N20C / FQU10N20C
V
GS
Top : 15.0 V
10.0 V
8.0 V
1
7.0 V
10
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
0
10
, Drain Current [A]
D
I
-1
10
-1
10
0
10
$
Notes :
1. 250&s Pulse Test
2. T
= 25
C
10
VDS, Drain-Source Volt age [V]
1.5
1.0
],
'
[
DS(ON)
R
0.5
VGS = 10V
Drain- Source On- Resistance
0.0
0 5 10 15 20 25 30
ID, Drai n Current [A]
1
$
Note : T
%
VGS = 20V
1
10
150oC
25oC
0
10
, Drain Curr ent [A]
D
I
-1
10
246810
-55oC
$
Notes :
1. V
= 40V
DS
2. 250&s Pulse Test
VGS, Gate-Source Voltage [V]
Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i st ics
1
10
0
10
, Reverse Drain Current [A]
DR
%
= 25
J
I
-1
10
0.2 0. 4 0.6 0.8 1. 0 1.2 1.4 1. 6
%
150
%
25
$
Notes :
1. V
= 0V
GS
2. 250&s Pulse Test
VSD, Source-Drai n voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
1200
1000
800
600
400
Capacit ances [pF]
$
Note ;
200
1. V
= 0 V
GS
2. f = 1 MHz
0
-1
10
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
©2009 Fairchild Semiconductor Corporation
C
C
C
C
iss
C
oss
C
rss
0
10
VDS, Dra in- Source Volt age [V]
= Cgs + Cgd (Cds = short ed)
iss
= Cds + C
oss
gd
= C
rss
gd
1
10
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
VDS = 40V
VDS = 100V
VDS = 160V
$
Note : I
= 9.5A
D
Rev. A2, January 2009
12
10
8
6
4
, Gate-Source Voltage [V]
2
GS
V
0
0 4 8 12 16 20 24
QG, Total Gate Charge [nC]
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