Fairchild FQB8N60C, FQI8N60C service manual
FQB8N60C / FQI8N60C
FQB8N60C / FQI8N60C
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
D
GS
D2-PAK
FQB Series
GSD
Features
• 7.5A, 600V, R
• Low gate charge ( typical 28 nC)
• Low Crss ( typical 12 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant
I2-PAK
FQI Series
= 1.2Ω @VGS = 10 V
DS(on)
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October 2008
QFET
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Absolute Maximum Ratings T
= 25°C unless otherwise noted
C
Symbol Parameter FQB8N60C / FQI8N60C Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
Drain-Source Voltage 600 V
Drain Current
- Continuous (T
- Continuous (T
Drain Current - Pulsed
= 25°C)
C
= 100°C)
C
(Note 1)
7.5 A
4.6 A
30 A
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TA = 25°C)*
Power Dissipation (T
= 25°C)
C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
230 mJ
7.5 A
14.7 mJ
4.5 V/ns
3.13 W
147 W
- Derate above 25°C 1.18 W/°C
, T
T
J
STG
T
L
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Thermal Charac teristics
Symbol Parameter Typ Max Units
R
θJC
R
θJA
R
θJA
* When mounted on the minimum pad size recommended (PCB Mount)
Thermal Resistance, Junction-to-Case -- 0.85 °C/W
Thermal Resistance, Junction-to-Ambient* -- 40 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
©2008 Fairchild Semiconductor Corporation Rev. A1, October 2008
FQB8N60C / FQI8N60C
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter T e s t Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
/ ∆T
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
= 0 V, ID = 250 µA
GS
= 250 µA, Referenced to 25°C
I
D
V
= 600 V, VGS = 0 V
DS
= 480 V, TC = 125°C
V
DS
V
= 30 V, VDS = 0 V
GS
V
= -30 V, VDS = 0 V
GS
600 -- -- V
-- 0.7 -- V/°C
-- -- 1 µA
-- -- 10 µA
-- -- 100 nA
-- -- -100 nA
On Characteristics
V
R
g
FS
GS(th)
DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
= VGS, ID = 250 µA
DS
= 10 V, ID = 3.75 A
V
GS
V
= 40 V, ID = 3.75 A
DS
(Note 4)
2.0 -- 4.0 V
-- 1.0 1.2 Ω
-- 8.7 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance -- 105 135 pF
Reverse Transfer Capacitance -- 12 16 pF
= 25 V, VGS = 0 V,
V
DS
f = 1.0 MHz
-- 965 1255 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time -- 60.5 130 ns
Turn-Off Delay Time -- 81 170 ns
Turn-Off Fall Time -- 64.5 140 ns
Total Gate Charge
Gate-Source Charge -- 4.5 -- nC
Gate-Drain Charge -- 12 -- nC
V
= 300 V, ID = 7.5A,
DD
R
= 25 Ω
G
(Note 4, 5)
V
= 480 V, ID = 7.5A,
DS
V
GS
(Note 4, 5)
= 10 V
-- 16.5 45 ns
-- 28 36 nC
Drain-So urce Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 7.3mH, IAS = 7.5 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 7.5A, di/dt ≤ 200A/µs, VDD ≤ BV
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Maximum Continuous Drain-Source Diode Forward Current -- -- 7.5 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 30 A
V
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 3.4 -- µC
Starting TJ = 25°C
DSS,
= 0 V, IS = 7.5 A
GS
= 0 V, IS = 7.5 A,
V
GS
dI
/ dt = 100 A/µs
F
(Note 4)
-- -- 1.4 V
-- 365 -- ns
Rev. A1, October 2008©2008 Fairchild Semiconductor Corporation
Typical Characteristics
FQB8N60C / FQI8N60C
V
GS
Top : 1 5 .0 V
10 .0 V
8.0 V
1
10
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5 .0 V
0
10
, Drain Current [A]
D
I
$
-1
10
-1
10
0
10
Notes :
1. 250&s Pulse Test
2. T
1
10
VDS, Drain-Source Voltage [V]
3.5
3.0
2.5
],
'
[
2.0
DS(ON)
R
1.5
Drain-Source On-Resistance
1.0
0.5
0 5 10 15 20
VGS = 10V
VGS = 20V
$
ID, Drain Current [A]
= 25
C
Note : T
1
10
150oC
%
25oC
0
10
, Drain Current [A]
D
I
-1
10
246810
-55oC
$
Notes :
= 40V
1. V
DS
2. 25 0&s Pulse Test
VGS, Gate-Source Voltage [V]
Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i st ics
1
10
%
= 25
J
0
10
, Reverse Drain Current [A]
DR
I
-1
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4
%
150
%
25
$
Note s :
1. V
= 0V
GS
2. 250&s Pulse T es t
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
2000
1800
1600
1400
1200
1000
800
600
Capacitance [pF]
400
200
0
-1
10
VDS, Drain-Source Voltage [V]
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
gd
C
= C
rss
gd
C
iss
12
10
8
VDS = 480V
C
oss
$
Note s ;
1. V
C
rss
0
10
2. f = 1 MHz
1
10
= 0 V
GS
6
4
, Ga te -S o u rc e V o lta g e [V ]
GS
2
V
0
0 5 10 15 20 25 30
QG, Tota l G a te Cha rg e [n C ]
VDS = 120V
VDS = 300V
$
Note : I
= 8A
D
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Rev. A1, October 2008©2008 Fairchild Semiconductor Corporation
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