Fairchild FQB5N50C, FQI5N50C service manual

FQB5N50C/FQI5N50C

FQB5N50C/FQI5N50C

500V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.

D

GS

D2-PAK

FQB Series

GSD

Features

• 5A, 500V, R

• Low gate charge ( typical 18nC)

• Low Crss ( typical 15pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• RoHS Compliant

I2-PAK

FQI Series

= 1.4 Ω @VGS = 10 V

DS(on)

G

October 2008

QFET

D

!

!

"

"

"

"

!

!

"

!

!

"
"

"

!

!

S

®

Absolute Maximum Ratings T

= 25°C unless otherwise noted

C

Symbol Parameter FQB5N50C/FQI5N50C Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

Drain-Source Voltage 500 V
Drain Current

- Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

5A

2.9 A
20 A

Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

300 mJ

5A

7.3 mJ

4.5 V/ns
73 W

- Derate above 25°C 0.58 W/°C

, T

T

J

STG

T

L

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300 °C

Thermal Charac teristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

R

θJA

Thermal Resistance, Junction-to-Case -- 1.71 °C/W
Thermal Resistance, Junction-to-Ambient * -- 40 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

©2008 Fairchild Semiconductor Corporation Rev. A1, Oct 2008

FQB5N50C/FQI5N50C

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter T e s t Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

V

= 0 V, ID = 250 µA

GS

= 250 µA, Referenced to 25°C

I

D

V

= 500 V, VGS = 0 V

DS

= 400 V, TC = 125°C

V

DS

V

= 30 V, VDS = 0 V

GS

V

= -30 V, VDS = 0 V

GS

500 -- -- V

-- 0.5 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V, ID = 2.5A

V

GS

V

= 40 V, ID = 2.5A

DS

(Note 4)

2.0 -- 4.0 V

-- 1.14 1.4 Ω

-- 5.2 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 80 105 pF
Reverse Transfer Capacitance -- 15 20 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 480 625 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 46 100 ns
Turn-Off Delay Time -- 50 110 ns
Turn-Off Fall Time -- 48 105 ns
Total Gate Charge
Gate-Source Charge -- 2.2 -- nC
Gate-Drain Charge -- 9.7 -- nC

V

= 250 V, ID = 5A,

DD

R

= 25 Ω

G

(Note 4, 5)

V

= 400 V, ID = 5A,

DS

V

GS

(Note 4, 5)

= 10 V

-- 12 35 ns

-- 18 24 nC

Drain-So urce Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 21.5 mH, IAS = 5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 5A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Maximum Continuous Drain-Source Diode Forward Current -- -- 5 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 20 A

V

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 1.9 -- µC

Starting TJ = 25°C

DSS,

= 0 V, IS = 5 A

GS

= 0 V, IS = 5 A,

V

GS

dI

/ dt = 100 A/µs

F

(Note 4)

-- -- 1.4 V

-- 263 -- ns

Rev. A1, Oct 2008©2003 Fairchild Semiconductor Corporation

Typical Characteristics

FQB5N50C/FQI5N50C

V

GS

Top : 1 5 .0 V

10.0 V

8.0 V

1

10

7.0 V

6.5 V

6.0 V

5.5 V
Botto m : 5.0 V

0

10

, Drain Current [A]

D

I

!

-1

10

-1

10

0

10

Note s :

1. 25 0#s Pulse Test

2. T

1

10

VDS, Drain-Source Voltage [V]

4.5

4.0

3.5

3.0

],

$

[

2.5

DS(ON)

R

2.0

1.5

Drain-Source On-Resistance

1.0

0.5
0 5 10 15

VGS = 10V

!

ID, Drain Current [A]

= 25

C

Note : T

"

VGS = 20V

= 25

J

1

10

150oC

25oC

0

10

, Drain Current [A]

D

I

-1

10

246810

-55oC

!

Note s :

= 40V

1. V

DS

2. 250#s Pulse Test

VGS, Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i st ics

1

10

"

0

10

"

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4

150

"

25

!

Note s :

= 0V

1. V

GS

2. 250#s Pulse Test

VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

1200

1000

800

600

400

Capacitance [pF]

200

0

-1

10

VDS, Drain-Source Voltage [V]

C

= C

+ Cgd (Cds = shorted)

iss

gs

= Cds + C

C

oss

gd

C

= C

rss

gd

C

iss

C

oss

!

C

rss

0

10

Note s ;

1. V

2. f = 1 MHz

1

10

= 0 V

GS

12

10

8

6

4

, Gate-Source Voltage [V]

GS

2

V

0

0 5 10 15 20

QG, Tota l G a te C h a rg e [n C ]

VDS = 100V

VDS = 250V

VDS = 400V

!

Note : I

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

= 5A

D

Rev. A1, Oct 2008©2008 Fairchild Semiconductor Corporation