Fairchild FQB50N06, FQI50N06 service manual

FQB50N06 / FQI50N06

FQB50N06 / FQI50N06

60V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.

D

G

S

D2-PAK

FQB Series

G

D

S

October 2008

QFET

Features

• 50A, 60V, R

• Low gate charge ( typical 31 nC)

• Low Crss ( typical 65 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

• RoHS Compliant

I2-PAK

FQI Series

= 0.022Ω @VGS = 10 V

DS(on)

G

D

!

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®

Absolute Maximum Ratings T

= 25°C unless otherwise noted

C

Symbol Parameter FQB50N06 / FQI50N06 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

Drain-Source Voltage 60 V
Drain Current

- Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

50 A

35.4 A
200 A

Gate-Source Voltage ± 25 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TA = 25°C) *
Power Dissipation (T

= 25°C)

C

(Note 2)
(Note 1)
(Note 1)
(Note 3)

490 mJ

50 A
12 mJ

7.0 V/ns

3.75 W
120 W

- Derate above 25°C 0.8 W/°C

, T

T

J

STG

T

L

Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300 °C

Thermal Charac teristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

R

θJA

* When mounted on the minimum pad size recommended (PCB Mount)

Thermal Resistance, Junction-to-Case -- 1.24 °C/W
Thermal Resistance, Junction-to-Ambient * -- 40 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

©2008 Fairchild Semiconductor Corporation Rev. A2. Oct 2008

FQB50N06 / FQI50N06

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter T e s t Conditions Min Typ Max Units

Off Characteristics

BV
∆BV
/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

V

= 0 V, ID = 250 µA

GS

= 250 µA, Referenced to 25°C

I

D

V

= 60 V, VGS = 0 V

DS

= 48 V, TC = 150°C

V

DS

V

= 25 V, VDS = 0 V

GS

V

= -25 V, VDS = 0 V

GS

60 -- -- V

-- 0.06 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V , ID = 25 A

V

GS

V

= 25 V, ID = 25 A

DS

(Note 4)

2.0 -- 4.0 V

-- 0.018 0.022 Ω

-- 22 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 440 580 pF
Reverse Transfer Capacitance -- 65 90 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 1180 1540 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 105 220 ns
Turn-Off Delay Time -- 60 130 ns
Turn-Off Fall Time -- 65 140 ns
Total Gate Charge
Gate-Source Charge -- 8 -- nC
Gate-Drain Charge -- 13 -- nC

V

= 30 V, ID = 25 A,

DD

R

= 25 Ω

G

V

= 48 V, ID = 50 A,

DS

V

GS

= 10 V

(Note 4, 5)

(Note 4, 5)

-- 15 40 ns

-- 31 41 nC

Drain-So urce Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 230µH, IAS = 50A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 50A, di/dt ≤ 300A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Maximum Continuous Drain-Source Diode Forward Current -- -- 50 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 200 A

V

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 75 -- nC

Starting TJ = 25°C

DSS,

= 0 V, IS = 50 A

GS

= 0 V, IS = 50 A,

V

GS

dI

/ dt = 100 A/µs

F

-- -- 1.5 V

-- 52 -- ns

(Note 4)

Rev. A2. Oct 2008©2008 Fairchild Semiconductor Corporation

Typical Characteristics

FQB50N06 / FQI50N06

℃

-55

, Gate-Source Voltage [V]

※

Note s :

1. V

= 30V

DS

2. 250μs Pulse Test

2

10

1

10

, Drain Current [A]

D

I

0

10

10

V
Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V
Botto m : 4 .5 V

-1

GS

10

VDS, Drain-Source Voltage [V]

※

Note s :

1. 250μs Pulse Test

℃

2. T

= 25

C

0

2

10

1

10

1

10

℃

175

, Drain Current [A]

D

I

℃

25

0

10

246810

V

GS

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i st ics

0.05

2

0.04

10

VGS = 10V

],

0.03

Ω

[

DS(ON)

0.02

R

VGS = 20V

1

10

0.01

Drain-Source On-Resistance

0.00
0 50 100 150 200

※

Note : T

ID, Drain Current [A]

Figure 3. On-Resistance Variati on vs .

Drain Current and Gate Voltage

℃

= 25

J

, Reverse Drain Current [A]

DR

I

10

175

0

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

℃

℃

25

※

Note s :

1. V

2. 250μs Pulse Test

VSD, Source-Drain voltage [V]

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

VDS = 30V

VDS = 48V

Capacitance [pF]

3000

2500

2000

1500

1000

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

gd

C

oss

C

iss

C

500

0

-1

10

rss

0

10

10

※

1. V

2. f = 1 M H z

1

Notes :

= 0 V

GS

VDS, Drain-Source Voltage [V]

12

10

8

6

4

2

, Gate-Source Voltage [V]

GS

V

0

0 5 10 15 20 25 30 35

QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

※

= 0V

GS

Note : I

D

= 50A

©2008 Fairchild Semiconductor Corporation Rev. A2. Oct 2008