Fairchild FQB4N90, FQI4N90 service manual

FQB4N90 / FQI4N90

900V N-Channel MOSFET

FQB4N90 / FQI4N90

October 2001

TM

QFET

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well

Features

• 4.2A, 900V, R

• Low gate charge ( typically 24 nC)

• Low Crss ( typically 9.5 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

= 3.3 Ω @ VGS = 10 V

DS(on)

suited for high efficiency switch mode power supplies.

!

!

D

!

!

"

"

"

"

"

"
"

"

!

!

S

D

GS

2

-PAK

D

FQB Series

GSD

Absolute Maximum Ratings T

I2-PAK

FQI Series

= 25°C unless otherwise noted

C

!

!

G

Symbol Parameter FQB4N90 / FQI4N90 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

Drain-Source Voltage 900 V
Drain Current

- Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

4.2 A

2.65 A

16.8 A
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TA = 25°C) *
Power Dissipation (T

= 25°C)

C

(Note 2)
(Note 1)
(Note 1)
(Note 3)

570 mJ

4.2 A
14 mJ

4.0 V

3.13 W
140 W

- Derate above 25°C 1.12 W/°C

, T

T

J

stg

T

L

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

R

θJA

* When mounted on the minimum pad size recommended (PCB Mount)

©2001 Fairchild Semiconductor Corporation

Thermal Resistance, Junction-to-Case -- 0.89 °C/W
Thermal Resistance, Junction-to-Ambient * -- 40 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

Rev. B, October 2001

FQB4N90 / FQI4N90

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV
∆BV
/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 900 V, VGS = 0 V

DS

V

= 720 V, TC = 125°C

DS

V

= 30 V, VDS = 0 V

GS

= -30 V, VDS = 0 V

V

GS

900 -- -- V

-- 0.9 -- V/°C

-- -- 10 µA

-- -- 100 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

V

= 10 V, ID = 2.1 A

GS

= 50 V, ID = 2.1 A

V

DS

(Note 4)

3.0 -- 5.0 V

-- 2.7 3.3 Ω

-- 3.5 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 90 120 pF
Reverse Transfer Capacitance -- 9.5 12.5 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 860 1100 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 70 150 ns
Turn-Off Delay Time -- 45 10 0 ns
Turn-Off Fall Time -- 40 90 ns
Total Gate Charge
Gate-Source Charge -- 5.8 -- nC
Gate-Drain Charge -- 11.5 -- nC

= 450 V, ID = 4.2 A,

V

DD

= 25 Ω

R

G

V

= 720 V, ID = 4.2 A,

DS

V

GS

= 10 V

(Note 4, 5)

(Note 4, 5)

-- 25 60 ns

-- 24 30 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 61mH, IAS = 4.2A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 4.2A, di/dt ≤ 200A/µs, VDD≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2001 Fairchild Semiconductor Corporation

Maximum Continuous Drain-Source Diode Forward Current -- -- 4.2 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 16.8 A

= 0 V, IS = 4.2 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 3.3 -- µC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 4.2 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- 1.4 V

-- 440 -- ns

(Note 4)

Rev. B, October 2001

Typical Characteristics

FQB4N90 / FQI4N90

V

GS

1

Top : 1 5 .0 V

10

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V
Bottom : 5.5 V

0

10

, Dra in Curre n t [A ]

D

I

-1

10

-1

10

0

10

※

Note s :

1. 250μs Pulse Tes t

℃

2. T

= 25

C

1

10

VDS, Drain-Source Voltage [V]

10

8

6

[Ω],

DS(on)

R

4

Drain-Source On-Resistance

2

0

036912

VGS = 20V

VGS = 10V

※

Note : T

℃

= 25

J

ID , Drai n Curren t [A ]

1

10

℃

150

0

10

, Dra in C u rre n t [A]

D

I

-1

10

246810

℃

25

℃

-55

※

Note s :

= 50V

1. V

DS

2. 250μs Pulse Test

VGS , Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

1

10

0

10

℃

, Reverse Drain Current [A]

150

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4

℃

25

※

Note s :

1. V

= 0V

GS

2. 250μs Pulse Test

VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variati on vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current and

Temperature

VDS = 180V

VDS = 450V

VDS = 720V

※

Note : I

1500

1200

900

600

Capacitance [pF]

300

0

-1

10

VDS, Drain-Source Voltage [V]

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

10

gd

1

※

Note s :

1. V

= 0 V

GS

2. f = 1 MHz

C

iss

C

oss

C

rss

0

10

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 5 10 15 20 25 30

QG, Tota l Gate Charge [n C]

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics

= 4.2 A

D

Rev. B, October 2001©2001 Fairchild Semiconductor Corporation