Fairchild FQB4N80, FQI4N80 service manual

FQB4N80 / FQI4N80

FQB4N80 / FQI4N80

800V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.

D

G

S

D2-PAK

FQB Series

G

D

S

Features

• 3.9A, 800V, R

• Low gate charge ( typical 19 nC)

• Low Crss ( typical 8.6 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• RoHS Compliant

I2-PAK

FQI Series

DS(on)

= 3.6Ω @V

G

!

!

October 2008

QFET

= 10 V

GS

D

!

!

"

"

"

"
"

"

!

!

S

®

Absolute Maximum Ratings

TC = 25°C unless otherwise noted

Symbol Parameter FQB4N80 / FQI4N80 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt

P

D

Drain-Source Voltage 800 V

Drain Current

- Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

3.9 A

2.47 A

15.6 A

Gate-Source Voltage ± 30 V

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Power Dissipation (TA = 25°C) *

Power Dissipation (T

= 25°C)

C

(Note 2)

(Note 1)

(Note 1)

(Note 3)

460 mJ

3.9 A

13 mJ

4.0 V/ns

3.13 W

130 W

- Derate above 25°C 1.04 W/°C

, T

T

J

STG

T

L

Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

R

θJA

* When mounted on the minimum pad size recommended (PCB Mount)

Thermal Resistance, Junction-to-Case -- 0.96 °C/W
Thermal Resistance, Junction-to-Ambient * -- 40 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

©2008 Fairchild Semiconductor International Rev. A1, Oct 2008

1

FQB4N80 / FQI4N80

Electrical Characteristics

T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T

I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature
Coefficient

J

Zero Gate Voltage Drain Current

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

V

= 0 V, I

GS

= 250 µA, Referenced to 25°C

I

D

V

= 800 V, VGS = 0 V

DS

= 640 V, TC = 125°C

V

DS

V

= 30 V, VDS = 0 V

GS

V

= -30 V, VDS = 0 V

GS

= 250 µA

D

800 -- -- V

-- 0.95 -- V/°C

-- -- 10 µA

-- -- 100 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V

R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage

Static Drain-Source
On-Resistance

Forward Transconductance

V

= VGS, I

DS

= 10 V, ID = 1.95 A

V

GS

V

= 50 V, ID = 1.95 A

DS

= 250 µA

D

(Note 4)

3.0 -- 5.0 V

-- 2.8 3.6 Ω

-- 3.8 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance

Output Capacitance -- 75 100 pF

Reverse Transfer Capacitance -- 8.6 12 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 680 880 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Q

Q

g

gs

gd

Turn-On Delay Time

Turn-On Rise Time -- 45 100 ns

Turn-Off Delay Time -- 35 80 ns

Turn-Off Fall Time -- 35 80 ns

Total Gate Charge

Gate-Source Charge -- 4.2 -- nC

Gate-Drain Charge -- 9.1 -- nC

V

= 400 V, ID = 3.9 A,

DD

R

= 25 Ω

G

V

= 640 V, ID = 3.9 A,

DS

V

GS

= 10 V

(Note 4, 5)

(Note 4, 5)

-- 16 40 ns

-- 19 25 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 57mH, IAS = 3.9A, VDD = 50V, R

3. I

SD

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2008 Fairchild Semiconductor International

Maximum Continuous Drain-Source Diode Forward Current -- -- 3.9 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- 15.6 A

Drain-Source Diode Forward Voltage

Reverse Recovery Time
Reverse Recovery Charge -- 3.65 -- µC

≤ 3.9A, di/dt ≤ 200A/µs, V

= 25 Ω, Starting T

G

≤ BV

DD

DSS,

= 25°C

J

Starting TJ = 25°C

V

= 0 V, IS = 3.9 A

GS

= 0 V, IS = 3.9 A,

V

GS

dI

/ dt = 100 A/µs

F

2

-- -- 1.4 V

-- 575 -- ns

(Note 4)

Rev. A1, Oct 2008

Typical Characteristics

FQB4N80 / FQI4N80

V

1

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

0

Bottom : 5.5 V

-1

-2

-1

10

GS

※

Notes :

1. 250μs Pulse Test

℃

2. T

= 25

C

0

10

1

10

10

10

10

, Drai n Current [A]

D

I

10

VDS, Drain- Source Voltage [ V]

VGS = 20V

VGS = 10V

※

Note : T

℃

= 25

J

7

6

],

5

Ω

[

DS(ON)

4

R

3

Drain-Sour ce On-Resi stance

2

0246810

ID, Drain Cur rent [A]

1

10

150oC

0

10

, Drain Current [A]

D

I

-1

10

246810

25oC

-55oC

※

Notes :

1. V

= 50V

DS

2. 250μs Pulse Test

VGS, Gate- Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

1

10

0

10

℃

, Reverse Drain Curr ent [ A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2

150

℃

25

※

Notes :

= 0V

1. V

GS

2. 250μs Pulse Test

VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

1200

1000

800

600

400

Capacitance [pF]

200

0

-1

10

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

C

iss

C

oss

C

rss

0

10

10

※

1. V

2. f = 1 MHz

1

Notes :

GS

= 0 V

VDS, Drain- Source Volt age [V]

12

10

8

6

4

, Gate- Source Vol tage [ V]

2

GS

V

0

0 4 8 12 16 20

QG, Total Gate Charge [nC]

VDS = 160V

VDS = 400V

VDS = 640V

※

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

3

Note : I

= 3.9A

D

Rev. A1, Oct 2008©2008 Fairchild Semiconductor International