Fairchild FQB47P06, FQI47P06 service manual
FQB47P06/FQI47P06 60V P-Channel MOSFET
October 2008
QFET
FQB47P06 / FQI47P06
60V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as automotive,
DC/DC converters, and high efficiency switching for power
management in portable and battery operated products.
D
G
S
D2-PAK
FQB Series
Absolute Maximum Ratings T
Symbol Parameter FQB47P06 / FQI47P06 Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
, T
T
J
STG
T
L
Drain-Source Voltage -60 V
Drain Current
Drain Current - Pulsed
Gate-Source Voltage ± 25 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TA = 25°C) *
Power Dissipation (T
Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
G
D
S
= 25°C unless otherwise noted
C
- Continuous (T
- Continuous (T
= 25°C)
C
= 25°C)
C
= 100°C)
C
- Derate above 25°C 1.06 W/°C
Features
• -47A, -60V, R
• Low gate charge ( typical 84 nC)
• Low Crss ( typical 320 pF)
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• RoHS Compliant
I2-PAK
FQI Series
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
= 0.026Ω @VGS = -10 V
DS(on)
G
-47 A
-33.2 A
-188 A
820 mJ
-47 A
16 mJ
-7.0 V/ns
3.75 W
160 W
300 °C
S
D
®
Thermal Characteristics
Symbol Parameter Typ Max Units
R
θJC
R
θJA
R
θJA
* When mounted on the minimum pad size recommended (PCB Mount)
©2008 Fairchild Semiconductor Corporation
FQB47P06/FQI47P06 Rev. A
Thermal Resistance, Junction-to-Case -- 0.94 °C/W
Thermal Resistance, Junction-to-Ambient * -- 40 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
3
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FQB47P06/FQI47P06 60V P-Channel MOSFET
Elerical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
∆BV
/∆T
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
DSS
Breakdown Voltage Temperature
DSS
Coefficient
J
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
= 0 V, ID = -250 µA
V
GS
= -250 µA, Referenced to 25°C
I
D
= -60 V, VGS = 0 V
V
DS
= -48 V, TC = 150°C
V
DS
V
= -25 V, VDS = 0 V
GS
= 25 V, VDS = 0 V
V
GS
-60 -- -- V
-- -0.06 -- V/°C
-- -- -1 µA
-- -- -10 µA
-- -- -100 nA
-- -- 100 nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
= VGS, ID = -250 µA
V
DS
= -10 V, ID = -23.5 A
V
GS
V
= -30 V, ID = -23.5 A
DS
(Note 4)
-2.0 -- -4.0 V
-- 0.021 0.026 Ω
-- 21 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance -- 1300 1700 pF
Reverse Transfer Capacitance -- 320 420 pF
V
= -25 V, VGS = 0 V,
DS
f = 1.0 MHz
-- 2800 3600 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time -- 450 910 ns
Turn-Off Delay Time -- 100 210 ns
Turn-Off Fall Time -- 195 400 ns
Total Gate Charge
Gate-Source Charge -- 18 -- nC
Gate-Drain Charge -- 44 -- nC
V
= -30 V, ID = -23.5 A,
DD
= 25 Ω
R
G
V
= -48 V, ID = -47 A,
DS
V
= -10 V
GS
(Note 4, 5)
(Note 4, 5)
-- 50 110 ns
-- 84 110 nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.43mH, I
3. I
SD
4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%
5. Essentially independent of operating temperature
FQB47P06/FQI47P06 Rev. A
Maximum Continuous Drain-Source Diode Forward Current -- -- -47 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- -188 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 0.55 -- µC
= -47A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C
AS
≤ -47A, di/dt ≤ 300A/µs, VDD ≤ BV
3
Starting TJ = 25°C
DSS,
= 0 V, IS = -47 A
V
GS
= 0 V, IS = -47 A,
V
GS
dI
/ dt = 100 A/µs
F
-- -- -4.0 V
-- 130 -- ns
(Note 4)
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Typical Characteristics
FQB47P06/FQI47P06 60V P-Channel MOSFET
V
GS
2
Top : - 15.0 V
10
- 10.0 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom : - 4.5 V
1
10
, Drain Current [A]
D
-I
0
10
-1
10
0
10
-VDS, Drain-Source Voltage [V]
0.10
0.08
0.06
[Ω],
DS(on)
R
0.04
0.02
Drain-Source On-Resistance
0.00
0 100 200 300 400
VGS = - 10V
VGS = - 20V
-ID , Drain Current [ A]
* Notes :
µs Pulse Test
1. 250
= 25oC
2. T
C
1
10
* Note : TJ = 25oC
2
10
1
10
175oC
0
25oC
10
, Drain Current [A]
D
-I
-1
10
246810
-55oC
* Notes :
1. V
2. 250
= -30V
DS
µs Pulse Test
-VGS , Gate-Source Voltage [V]
Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics
2
10
1
10
0
10
175oC
, Reverse Drain Current [A]
DR
-I
-1
10
0.00.20.40.60.81.01.21.41.61.8 2.02.22.42.62.8
25oC
* Notes :
1. V
2. 250
= 0V
GS
µs Pulse Test
-VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
8000
7000
6000
5000
4000
3000
Capacitance [pF]
2000
1000
0
-1
10
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FQB47P06/FQI47P06 Rev. A3
Drain Current and Gate Voltage
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
gd
C
= C
rss
gd
C
oss
C
iss
C
rss
0
10
VDS, Drain-Source Voltage [V]
10
1
* Notes :
1. V
2. f = 1 MHz
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
8
= 0 V
GS
6
4
, Gate-Source Voltage [V]
2
GS
-V
0
0 102030405060708090
VDS = -30V
VDS = -48V
* Note : ID = -47 A
QG, Total Gate Charge [nC]
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