Fairchild FQB44N10, FQI44N10 service manual

FQB44N10 / FQI44N10

100V N-Channel MOSFET

October 2008

QFET

®

General Description

These N-Channel enhancement mode power field effect

FQB44N10 / FQI44N10

transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor

Features

• 43.5A, 100V, R

• Low gate charge ( typical 48 nC)

• Low Crss ( typical 85 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

• RoHS Compliant

= 0.039Ω @VGS = 10 V

DS(on)

control.

D

!

!

G

S

D2-PAK

FQB Series

G

D

Absolute Maximum Ratings T

S

= 25°C unless otherwise noted

C

I2-PAK

FQI Series

G

Symbol Parameter FQB44N10 / FQI44N10 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

Drain-Source Voltage 100 V
Drain Current

- Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

43.5 A

30.8 A
174 A

Gate-Source Voltage ± 25 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TA = 25°C) *
Power Dissipation (T

= 25°C)

C

(Note 2)
(Note 1)
(Note 1)
(Note 3)

530 mJ

43.5 A

14.6 mJ

6.0 V/ns

3.75 W
146 W

- Derate above 25°C 0.97 W/°C

, T

T

J

STG

T

L

Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300 °C

!

!

D

!

!

"

"

"

"

"

"
"

"

!

!

S

Thermal Charac teristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

R

θJA

* When mounted on the minimum pad size recommended (PCB Mount)

©2008 Fairchild Semiconductor International Rev. A1, Oct 2008

Thermal Resistance, Junction-to-Case -- 1.03 °C/W
Thermal Resistance, Junction-to-Ambient * -- 40 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

FQB44N10 / FQI44N10

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter T e s t Conditions Min Typ Max Units

Off Characteristics

BV
∆BV
/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

V

= 0 V, ID = 250 µA

GS

= 250 µA, Referenced to 25°C

I

D

V

= 100 V, VGS = 0 V

DS

= 80 V, TC = 150°C

V

DS

V

= 25 V, VDS = 0 V

GS

V

= -25 V, VDS = 0 V

GS

100 -- -- V

-- 0.1 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V, ID = 21.75 A

V

GS

V

= 40 V, ID = 21.75 A

DS

(Note 4)

2.0 -- 4.0 V

-- 0.03 0.039 Ω

-- 30 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 425 550 pF
Reverse Transfer Capacitance -- 85 110 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 1400 1800 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 190 390 ns
Turn-Off Delay Time -- 90 190 ns
Turn-Off Fall Time -- 100 21 0 n s
Total Gate Charge
Gate-Source Charge -- 9.0 -- nC
Gate-Drain Charge -- 24 -- nC

V

= 50 V, ID = 43.5 A,

DD

R

= 25 Ω

G

V

= 80 V, ID = 43.5 A,

DS

V

GS

= 10 V

(Note 4, 5)

(Note 4, 5)

-- 19 45 ns

-- 48 62 nC

Drain-So urce Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 0.42mH, IAS = 43.5A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 43.5A, di/dt ≤ 300A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2008 Fairchild Semiconductor International

Maximum Continuous Drain-Source Diode Forward Current -- -- 43.5 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 174 A

V

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 360 -- nC

Starting TJ = 25°C

DSS,

= 0 V, IS = 43.5 A

GS

= 0 V, IS = 43.5 A,

V

GS

dI

/ dt = 100 A/µs

F

-- -- 1.5 V

-- 98 -- ns

(Note 4)

Rev. A1, Oct 2008

Typical Characteristics

V

GS

Top : 15.0 V

2

10

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V
Bottom : 4.5 V

1

10

FQB44N10 / FQI44N10

, Drain Current [A]

D

I

0

10

-1

10

0

10

※

Notes :

1. 250μs Pulse Test

℃

2. T

= 25

C

1

10

VDS, Drain-Source Voltage [V]

2

10

1

10

10

, Dra in Curre n t [A ]

D

I

10

℃

175

℃

25

0

-1

246810

VGS , Gate-Source Voltage [V]

℃

-55

※

Note s :

1. V

= 40V

DS

2. 250μs Pulse Test

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i st ics

0.15

0.12

],

Ω

0.09

[

DS(on)

R

0.06

Drain-Source On-Resistance

0.03

0.00
0 30 60 90 120 150 180

VGS = 10V

VGS = 20V

ID , Drain Curren t [A ]

※

Note : T

2

10

1

10

0

10

, Reverse Drain Current [A]

DR

I

℃

= 25

J

175

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

℃

℃

25

VSD , Source-Drain Voltage [V]

※

Notes :

1. V

= 0V

GS

2. 250μs Pulse Te st

Figure 3. On-Resistance Variati on vs .

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

4000

3500

3000

2500

2000

1500

Capacitance [pF]

1000

500

0

-1

10

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

C

iss

C

oss

C

rss

0

10

10

1

※

Notes :

1. V

= 0 V

GS

2. f = 1 MH z

VDS, Drain-Source Voltage [V]

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

01020304050

QG, Tota l Gate Charge [n C]

VDS = 50V

VDS = 80V

※

Note : I

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics

= 43.5A

D

Rev. A1, Oct 2008©2008 Fairchild Semiconductor International