Fairchild FQB34P10, FQI34P10 service manual

FQB34P10 / FQI34P10

100V P-Channel MOSFET

FQB34P10 / FQI34P10

®

QFET

General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier,

Features

• -33.5A, -100V, R

• Low gate charge ( typical 85 nC)

• Low Crss ( typical 170 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

DS(on)

= 0.06Ω @V

= -10 V

GS

high efficiency switching DC/DC converters, and DC motor control.

S

!!!!

D

GS

D2-PAK

FQB Series

Absolute Maximum Ratings

I2-PAK

GSD

TC = 25°C unless otherw ise noted

FQI Series

G

!!!!

●●●●

▶▶▶▶

▲▲▲▲

●●●●

!!!!

D

Symbol Parameter FQB34P10 / FQI34P10 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt

P

D

Drain-Source Voltage -100 V

Drain Current

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

-33.5 A

-23.5 A

-134 A

Gate-Source Voltage ± 25 V

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Power Dissipation (TA = 25°C) *

Power Dissipation (T

= 25°C)

C

(Note 2)

(Note 1)

(Note 3)

2200 mJ

-33.5 A

15.5 mJ

-6.0 V/ns

3.75 W

155 W

- Derate above 25°C 1.03 W/°C

, T

T

J

STG

T

L

Operating and Storage Temperature Range -55 to +175 °C

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

R

θJA

* When mounted on the minimum pad size recommended (PCB Mount)

Thermal Resistance, Junction-to-Case -- 0.97 °C/W Thermal Resistance, Junction-to-Ambient * -- 40 °C/W Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

Rev. B, June 2004

FQB34P10 / FQI34P10

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Unit s

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T

I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

J

Zero Gate Voltage Drain Current

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, I

V

GS

I

= -250 µA, Referenced to 25°C

D

V

= -100 V, VGS = 0 V

DS

= -80 V, TC = 150°C

V

DS

= -25 V, VDS = 0 V

V

GS

= 25 V, VDS = 0 V

V

GS

= -250 µA

D

-100 -- -- V

-- -0.1 -- V/°C

-- -- -1 µA

-- -- -10 µA

-- -- -100 nA

-- -- 100 nA

On Characteristics

V

R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance

= VGS, I

V

DS

= -10 V, ID = -16.75 A

V

GS

= -40 V, ID = -16.75 A

V

DS

= -250 µA

D

(Note 4)

-2.0 -- -4.0 V

-- 0.049 0.06 Ω

-- 23 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance

Output Capacitance -- 730 950 pF

Reverse Transfer Capacitance -- 170 220 pF

= -25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 2240 2910 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

gs

gd

Turn-On Delay Time

Turn-On Rise Time -- 250 510 ns

Turn-Off Delay Time -- 160 330 ns

Turn-Off Fall Time -- 210 430 ns

Total Gate Charge

Gate-Source Charge -- 15 -- nC

Gate-Drain Charge -- 45 -- nC

= -50 V, ID = -33.5 A,

V

DD

= 25 Ω

R

G

(Note 4, 5)

V

= -80 V, ID = -33.5 A,

DS

V

= -10 V

GS

(Note 4, 5 )

-- 25 60 ns

-- 85 110 nC

Drain-Source Diod e Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L =mH, I

3. I

≤ -33.5A, di/dt ≤ 300A/µs, VDD ≤ BV

SD

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Maximum Continuous Drain-Source Diode Forward Current -- -- -33.5 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- -134 A

= 0 V, IS = -33.5 A

Drain-Source Diode Forward Voltage

Reverse Recovery Time Reverse Recovery Charge -- 0.88 -- µC

= -33.5A, VDD = -25V, R

AS

= 25 Ω, Starting T

G

Starting TJ = 25°C

DSS,

= 25°C

J

V

GS

= 0 V, IS = -33.5 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- -4.0 V

-- 160 -- ns

(Note 4)

Rev. B, June 2004

Typical Characteristics

FQB34P10 / FQI34P10

2

V Top : -15.0 V

-10.0 V

-8.0 V

-7.0 V

-6.5 V

1

-5.5 V

-5.0 V Bottom : -4.5 V

0

-1

-2

-1

10

GS

Note :

※

1. 250µ s Pulse Test

2. T

= 25

℃

C

0

10

, Drain Current [A]

D

-I

10

-VDS, Drain-Source Voltage [V]

0.35

0.30

0.25

],

Ω

0.20

[

DS(on)

R

0.15

0.10

Drain-Source On-Resistance

0.05

0.00 0 25 50 75 100 125 150 175 200

VGS = - 10V

VGS = - 20V

※

-ID , Drain Current [A]

1

Note : T

2

10

175

℃

1

10

25

℃

0

10

, Drain Current [A]

D

-I

-1

10

246810

-55

℃

Notes :

※

1. VDS = -40V

2. 250µ s Pulse Test

-VGS , Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Charact er i st ics

2

10

1

10

0

10

25

℃

175

, Reverse Drain Current [A]

= 25

℃

J

-I

℃

DR

-1

10

0.0 0.5 1. 0 1.5 2.0 2. 5 3.0

-VSD , Source- Dr ain Voltage [ V]

Notes :

※

1. VGS = 0V

2. 250µ s Pulse Test

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

6500

6000

5500

5000

4500

4000

3500

3000

2500

2000

Capacitances [pF]

1500

1000

500

0

-1

10

Figure 5. Capacitance Characteristi cs Fig ure 6. Gate Charge Chara c t eristics

C

oss

C

iss

C

rss

0

10

VDS, Drai n-Source Voltage [V]

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

Notes :

※

1. VGS = 0 V

2. f = 1 MHz

1

10

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

VDS = -50V

VDS = -80V

VDS = -20V

※

Note : I

= -33.5 A

D

Rev. B, June 2004

12

10

8

6

4

, Gate-Source Voltage [V]

GS

2

-V

0

0 20406080100

QG, Total Gate Charge [nC]

FQB34P10 / FQI34P10

Typical Characteristics

Notes :

※

1. TC = 25 oC

2. T

= 175 oC

J

3. Single Pulse

1

10

DC

1.2

1.1

1.0

, (Normalized)

DSS

-BV

0.9

Drain-So urce Break down Voltage

0.8

-100 -50 0 50 100 150 200

TJ, Juncti on Temperature [oC]

Figure 7. Breakdo w n Voltage Variation

vs. Temperature

Operation in This Ar ea is Limit ed by R

2

10

1

10

, Drain Current [A]

D

0

-I

10

-1

10

0

10

DS(on)

-VDS, Drai n-Source Voltage [V]

(Continued)

Notes :

※

1. VGS = 0 V

2. I

= -250 µ A

D

100 µs

1 ms

10 ms

2.5

2.0

1.5

, (Normalized)

1.0

DS(ON)

R

0.5

Drain-Source On-Resistance

0.0

-100 -50 0 50 100 150 200

Notes :

※

1. VGS = -10 V = -16.7 5 A

2. I

D

TJ, Junct ion Temperature [oC]

Figure 8. On-Resistance Variation

vs. Temperature

40

35

30

25

2

10

20

15

, Drain Current [A]

D

-I

10

5

0

25 50 75 100 125 150 175

TC, Case Temperature [ ]

℃

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

0

10

D=0.5

0.2

-1

0.1

10

0.05

0.02

0.01

(t), Thermal Response

θ JC

Z

-2

10

-5

10

single pulse

-4

10

-3

10

t1, Square Wave Pulse Duration [sec]

Notes :

※

1. Z

2. Duty Factor , D=t1/t

3. TJM - TC = PDM * Z

-2

10

Figure 11. Tr ans ient Ther m al Res pons e Cur ve

vs. Case Temperature

(t) = 0.97 /W M ax.

℃

θ JC

P

DM

-1

2

(t)

θ JC

t

1

t

2

0

10

1

10

Rev. B, June 2004

12V

200nF

-3mA

50KΩ

V

Gate Charge Test Circuit & Waveform

V

GS

300nF

Same Type

as DUT

DUT

V

DS

GS

-10V

Resistive Switching Test Circuit & Waveforms

FQB34P10 / FQI34P10

Q

g

Q

gs

Q

gd

Charge

-10V

R

L

DUT

L

V

DD

V

GS

10%

V

DS

V

DS

V

GS

R

G

90%

t

d(on)tr

t

on

t

off

t

d(of f)

t

f

Unclamped Inductive Switching Test Circuit & Waveforms

BV

DSS

L

LL

V

DS

I

IDI

D

V

DD

BV

DD

I

AS

DSS

R

G

DUT

t

p

V

DD

1

----

E

=LI

E

=LI

E

AS

2

AS

t

p

I

(t)

D

DSS

--------------------

-------------------BV

BV

DSS-VDD

Time

V

(t)

V

(t)

DS

Rev. B, June 2004

Peak Diode Recovery dv /dt Test Circuit & Waveforms

+

V

DS

DUT

I

SD

Driver

R

G

V

GS

_

L

LL

Compliment of DUT

(N-Channel)

• dv/dt controlled by R

•ISDcontrolled by pulse period

G

FQB34P10 / FQI34P10

V

DD

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

Gate Pulse Width

--------------------------

D =

Gate Pulse Period

Body Diode Reverse Current

I

RM

IFM, Body Diode Forward Current

V

SD

Body Diode

Forward Voltage Drop

Body Diode Recovery dv/dt

di/dt

10V

V

DD

Rev. B, June 2004

Mechanical Dimensions

FQB34P10 / FQI34P10

D2 - PAK

Dimensions in Millimeters

Rev. B, June 2004

Mechanical Dimensions

FQB34P10 / FQI34P10

I2 - PAK

Dimensions in Millimeters

Rev. B, June 2004

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

A

CEx™ ActiveArray™ Bottomless™ CoolFET™

CROSSVOLT™

DOME™ EcoSPARK™

2

E

CMOS™ EnSigna™ FACT™ FACT Quiet Series™

Across the board. Around the world.™ The Power Franchise Programmable Active Droop™

®

FAST FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™

i-Lo™

ImpliedDisconnect™

®

ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC

®

OPTOPLANAR™ PACMAN™ POP™

Power247™ PowerSaver™ PowerTrench QFET

®

QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™

µSerDes™

SILENT SWITCHER SMART START™ SPM™ Stealth™

SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET

®

VCX™

®

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Semiconductor reserves the right to make changes at any time without notice in order to improve design.

that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. I11

Fairchild FQB34P10, FQI34P10 service manual

Specifications and Main Features

Frequently Asked Questions

User Manual