Fairchild FQB34P10, FQI34P10 service manual
FQB34P10 / FQI34P10
100V P-Channel MOSFET
FQB34P10 / FQI34P10
®
QFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
Features
• -33.5A, -100V, R
• Low gate charge ( typical 85 nC)
• Low Crss ( typical 170 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
DS(on)
= 0.06Ω @V
= -10 V
GS
high efficiency switching DC/DC converters, and DC motor
control.
S
!!!!
D
GS
D2-PAK
FQB Series
Absolute Maximum Ratings
I2-PAK
GSD
TC = 25°C unless otherw ise noted
FQI Series
G
!!!!
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D
Symbol Parameter FQB34P10 / FQI34P10 Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
Drain-Source Voltage -100 V
Drain Current
- Continuous (T
- Continuous (T
Drain Current - Pulsed
= 25°C)
C
= 100°C)
C
(Note 1)
-33.5 A
-23.5 A
-134 A
Gate-Source Voltage ± 25 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TA = 25°C) *
Power Dissipation (T
= 25°C)
C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
2200 mJ
-33.5 A
15.5 mJ
-6.0 V/ns
3.75 W
155 W
- Derate above 25°C 1.03 W/°C
, T
T
J
STG
T
L
Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Thermal Characteristics
Symbol Parameter Typ Max Units
R
θJC
R
θJA
R
θJA
* When mounted on the minimum pad size recommended (PCB Mount)
©2004 Fairchild Semiconductor Corporation
Thermal Resistance, Junction-to-Case -- 0.97 °C/W
Thermal Resistance, Junction-to-Ambient * -- 40 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
Rev. B, June 2004
FQB34P10 / FQI34P10
Electrical Characteristics
TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Unit s
Off Characteristics
BV
DSS
∆BV
DSS
/ ∆T
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
= 0 V, I
V
GS
I
= -250 µA, Referenced to 25°C
D
V
= -100 V, VGS = 0 V
DS
= -80 V, TC = 150°C
V
DS
= -25 V, VDS = 0 V
V
GS
= 25 V, VDS = 0 V
V
GS
= -250 µA
D
-100 -- -- V
-- -0.1 -- V/°C
-- -- -1 µA
-- -- -10 µA
-- -- -100 nA
-- -- 100 nA
On Characteristics
V
R
g
FS
GS(th)
DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
= VGS, I
V
DS
= -10 V, ID = -16.75 A
V
GS
= -40 V, ID = -16.75 A
V
DS
= -250 µA
D
(Note 4)
-2.0 -- -4.0 V
-- 0.049 0.06 Ω
-- 23 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance -- 730 950 pF
Reverse Transfer Capacitance -- 170 220 pF
= -25 V, VGS = 0 V,
V
DS
f = 1.0 MHz
-- 2240 2910 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time -- 250 510 ns
Turn-Off Delay Time -- 160 330 ns
Turn-Off Fall Time -- 210 430 ns
Total Gate Charge
Gate-Source Charge -- 15 -- nC
Gate-Drain Charge -- 45 -- nC
= -50 V, ID = -33.5 A,
V
DD
= 25 Ω
R
G
(Note 4, 5)
V
= -80 V, ID = -33.5 A,
DS
V
= -10 V
GS
(Note 4, 5 )
-- 25 60 ns
-- 85 110 nC
Drain-Source Diod e Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L =mH, I
3. I
≤ -33.5A, di/dt ≤ 300A/µs, VDD ≤ BV
SD
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2004 Fairchild Semiconductor Corporation
Maximum Continuous Drain-Source Diode Forward Current -- -- -33.5 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- -134 A
= 0 V, IS = -33.5 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 0.88 -- µC
= -33.5A, VDD = -25V, R
AS
= 25 Ω, Starting T
G
Starting TJ = 25°C
DSS,
= 25°C
J
V
GS
= 0 V, IS = -33.5 A,
V
GS
/ dt = 100 A/µs
dI
F
-- -- -4.0 V
-- 160 -- ns
(Note 4)
Rev. B, June 2004
Typical Characteristics
FQB34P10 / FQI34P10
2
V
Top : -15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
1
-5.5 V
-5.0 V
Bottom : -4.5 V
0
-1
-2
-1
10
GS
Note :
※
1. 250µ s Pulse Test
2. T
= 25
℃
C
0
10
10
10
10
10
, Drain Current [A]
D
-I
10
10
-VDS, Drain-Source Voltage [V]
0.35
0.30
0.25
],
Ω
0.20
[
DS(on)
R
0.15
0.10
Drain-Source On-Resistance
0.05
0.00
0 25 50 75 100 125 150 175 200
VGS = - 10V
VGS = - 20V
※
-ID , Drain Current [A]
1
Note : T
2
10
175
℃
1
10
25
℃
0
10
, Drain Current [A]
D
-I
-1
10
246810
-55
℃
Notes :
※
1. VDS = -40V
2. 250µ s Pulse Test
-VGS , Gate-Source Voltage [V]
Figure 2. Transfer CharacteristicsFigure 1. On-Region Charact er i st ics
2
10
1
10
0
10
25
℃
175
, Reverse Drain Current [A]
= 25
℃
J
-I
℃
DR
-1
10
0.0 0.5 1. 0 1.5 2.0 2. 5 3.0
-VSD , Source- Dr ain Voltage [ V]
Notes :
※
1. VGS = 0V
2. 250µ s Pulse Test
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
6500
6000
5500
5000
4500
4000
3500
3000
2500
2000
Capacitances [pF]
1500
1000
500
0
-1
10
Figure 5. Capacitance Characteristi cs Fig ure 6. Gate Charge Chara c t eristics
©2004 Fairchild Semiconductor Corporation
C
oss
C
iss
C
rss
0
10
VDS, Drai n-Source Voltage [V]
C
= Cgs + Cgd (Cds = shorted)
iss
= Cds + C
C
oss
gd
C
= C
rss
gd
Notes :
※
1. VGS = 0 V
2. f = 1 MHz
1
10
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
VDS = -50V
VDS = -80V
VDS = -20V
※
Note : I
= -33.5 A
D
Rev. B, June 2004
12
10
8
6
4
, Gate-Source Voltage [V]
GS
2
-V
0
0 20406080100
QG, Total Gate Charge [nC]
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