Fairchild FQB30N06L, FQI30N06L service manual
FQB30N06L / FQI30N06L
FQB30N06L / FQI3 0N06L
60V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.
D
G
S
D2-PAK
FQB Series
G
D
S
October 2008
QFET
Features
• 32A, 60V, R
• Low gate charge ( typical 15 nC)
• Low Crss ( typical 50 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• RoHS Compliant
I2-PAK
FQI Series
= 0.035Ω @V
DS(on)
= 10 V
GS
D
!
!
"
"
"
"
!
!
"
!
!
G
"
"
"
!
!
S
®
Absolute Maximum Ratings T
= 25°C unless otherwise noted
C
Symbol Parameter FQB30N06L / FQI30N06L Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
Drain-Source Voltage 60 V
Drain Current
- Continuous (T
- Continuous (T
Drain Current - Pulsed
= 25°C)
C
= 100°C)
C
(Note 1)
32 A
22.6 A
128 A
Gate-Source Voltage ± 20 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TA = 25°C) *
Power Dissipation (T
= 25°C)
C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
350 mJ
32 A
7.9 mJ
7.0 V/ns
3.75 W
79 W
- Derate above 25°C 0.53 W/°C
, T
T
J
STG
T
L
Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Thermal Charac teristics
Symbol Parameter Typ Max Units
R
θJC
R
θJA
R
θJA
* When mounted on the minimum pad size recommended (PCB Mount)
Thermal Resistance, Junction-to-Case -- 1.90 °C/W
Thermal Resistance, Junction-to-Ambient * -- 40 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
©2008 Fairchild Semiconductor Corporation Rev. A2. Oct 2008
FQB30N06L / FQI30N06L
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter T e s t Conditions Min Typ Max Units
Off Characteristics
BV
∆BV
/ ∆T
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
DSS
Breakdown Voltage Temperature
DSS
Coefficient
J
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
= 0 V, I
GS
= 250 µA, Referenced to 25°C
I
D
V
= 60 V, VGS = 0 V
DS
= 48 V, TC = 150°C
V
DS
V
= 20 V, VDS = 0 V
GS
V
= -20 V, VDS = 0 V
GS
= 250 µA
D
60 -- -- V
-- 0.06 -- V/°C
-- -- 1 µA
-- -- 10 µA
-- -- 100 nA
-- -- -100 nA
On Characteristics
V
R
g
FS
GS(th)
DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
= VGS, I
DS
V
= 10 V, ID = 16 A
GS
= 5 V, ID =16 A
V
GS
= 25 V, ID = 16 A
V
DS
= 250 µA
D
(Note 4)
1.0 -- 2.5 V
----0.027
0.035
0.035
0.045
-- 24 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance -- 270 350 pF
Reverse Transfer Capacitance -- 50 65 pF
= 25 V, VGS = 0 V,
V
DS
f = 1.0 MHz
-- 800 1040 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time -- 210 430 ns
Turn-Off Delay Time -- 60 130 ns
Turn-Off Fall Time -- 110 230 ns
Total Gate Charge
Gate-Source Charge -- 3.5 -- nC
Gate-Drain Charge -- 8.5 -- nC
V
= 30 V, ID = 16 A,
DD
R
= 25 Ω
G
= 48 V, ID = 32 A,
V
DS
V
GS
= 5 V
(Note 4, 5)
(Note 4, 5)
-- 15 40 ns
-- 15 20 nC
Ω
Drain-So urce Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 400µH, I
3. ISD ≤ 32A, di/dt ≤ 300A/us, VDD ≤ BV
4. Pulse Test : Pulse width ≤ 300us, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Maximum Continuous Drain-Source Diode Forward Current -- -- 32 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 128 A
V
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 90 -- nC
= 32A, VDD = 25V, R
AS
= 25 Ω, Starting T
G
Starting TJ = 25°C
DSS,
= 25°C
J
= 0 V, IS = 32 A
GS
= 0 V, IS = 32 A,
V
GS
dI
/ dt = 100 A/µs
F
-- -- 1.5 V
-- 60 -- ns
(Note 4)
Rev. A2. Oct 2008©2008 Fairchild Semiconductor Corporation
Typical Characteristics
FQB30N06L / FQI30N06L
2
V
Top : 10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
1
0
-1
10
GS
!
Notes :
1. 250"s Pulse Test
#
2. T
= 25
C
0
10
10
10
10
, Drain Current [A]
D
I
10
VDS, Drain-Source Voltage [V]
80
60
],
$
40
[m
DS(ON)
R
20
Drain-Source On-Resistance
0
0 20406080100120
VGS = 5V
VGS = 10V
!
Not e : T
= 25
J
ID, Drain Current [A]
2
10
1
1
10
#
175
, Drain Current [ A]
D
I
#
25
#
0
10
0246810
-55
V
, Gate-Source Voltage [V]
GS
!
Notes :
= 25V
1. V
DS
2. 250"s Pulse Test
Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i st ics
2
10
1
10
, Re ver se Drain Curr ent [ A]
#
175
DR
#
I
0
10
0.4 0.6 0.8 1.0 1.2 1.4 1.6
#
25
!
Notes :
= 0V
1. V
GS
2. 250"s Pulse Test
VSD, Source-Drai n voltage [ V]
Figure 3. On-Resistance Variati on vs .
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
VDS = 30V
VDS = 48V
!
Note : I
= 32A
D
2000
C
1500
1000
Capacitance [ pF]
500
0
-1
10
oss
C
iss
C
rss
VDS, Drain- Source Volt age [V]
C
= Cgs + Cgd (Cds = short ed)
iss
C
= Cds + C
oss
gd
C
= C
rss
gd
!
Notes :
= 0 V
1. V
GS
2. f = 1 MHz
0
10
1
10
12
10
8
6
4
2
, Gate-Source Voltage [V]
GS
V
0
0 5 10 15 20 25 30
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
©2008 Fairchild Semiconductor Corporation Rev. A2. Oct 2008
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