Fairchild FQB27P06, FQI27P06 service manual
FQB27P06 / FQI27P06
October 2008
QFET
FQB27P06 / FQI27P06
60V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as automotive,
DC/DC converters, and high efficiency switching fo r power
management in portable and battery operated products.
D
G
S
D2-PAK
FQB Series
Absolute Maximum Ratings T
Symbol Parameter FQB27P06 / FQI27P06 Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
, T
T
J
STG
T
L
Drain-Source Voltage -60 V
Drain Current
Drain Current - Pulsed
Gate-Source Voltage ± 25 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TA = 25°C) *
Power Dissipation (T
Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
G
D
S
= 25°C unless otherwise noted
C
- Continuous (T
- Continuous (T
= 25°C)
C
= 25°C)
C
= 100°C)
C
- Derate above 25°C 0.8 W/°C
Features
• -27A, -60V, R
• Low gate charge ( typical 33 nC)
• Low Crss ( typical 120 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
RoHS Compliant
•
I2-PAK
FQI Series
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
= 0.07Ω @VGS = -10 V
DS(on)
G
!!!!
!!!!
-27 A
-19.1 A
-108 A
560 mJ
-27 A
12 mJ
-7.0 V/ns
3.75 W
120 W
300 °C
S
!!!!
!!!!
●●●●
●●●●
●●●●
●●●●
▶▶▶▶
▶▶▶▶
●●●●
●●●●
!!!!
!!!!
D
▲▲▲▲
▲▲▲▲
®
Thermal Charac teristics
Symbol Parameter Typ Max Units
R
θJC
R
θJA
R
θJA
* When mounted on the minimum pad size recommended (PCB Mount)
©2008 Fairchild Semiconductor Corporation Rev. A3. Oct 2008
Thermal Resistance, Junction-to-Case -- 1.25 °C/W
Thermal Resistance, Junction-to-Ambient * -- 40 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
FQB27P06 / FQI27P06
Elerical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Te st Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
/ ∆T
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
= 0 V, ID = -250 µA
GS
= -250 µA, Referenced to 25°C
I
D
V
= -60 V, VGS = 0 V
DS
= -48 V, TC = 150°C
V
DS
V
= -25 V, VDS = 0 V
GS
V
= 25 V, VDS = 0 V
GS
-60 -- -- V
-- -0.06 -- V/°C
-- -- -1 µA
-- -- -10 µA
-- -- -100 nA
-- -- 100 nA
On Characteristics
V
R
g
FS
GS(th)
DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
= VGS, ID = -250 µA
DS
= -10 V, ID = -13.5 A
V
GS
V
= -30 V, ID = -13.5 A
DS
(Note 4)
-2.0 -- -4.0 V
-- 0.055 0.07 Ω
-- 12.4 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance -- 510 660 pF
Reverse Transfer Capacitance -- 120 155 pF
= -25 V, VGS = 0 V,
V
DS
f = 1.0 MHz
-- 1100 1400 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time -- 185 380 ns
Turn-Off Delay Time -- 30 70 n s
Turn-Off Fall Time -- 90 190 ns
Total Gate Charge
Gate-Source Charge -- 6.8 -- nC
Gate-Drain Charge -- 18 -- nC
V
= -30 V, ID = -13.5 A,
DD
R
= 25 Ω
G
V
= -48 V, ID = -27 A,
DS
V
GS
= -10 V
(Note 4, 5)
(Note 4, 5)
-- 18 45 ns
-- 33 43 nC
Drain-So urce Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.9mH, IAS = -27A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ -27A, di/dt ≤ 300A/µs, VDD ≤ BV
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Maximum Continuous Drain-Source Diode Forward Current -- -- -27 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- -108 A
V
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 0.41 -- µC
Starting TJ = 25°C
DSS,
= 0 V, IS = -27 A
GS
= 0 V, IS = -27 A,
V
GS
dI
/ dt = 100 A/µs
F
-- -- -4.0 V
-- 105 -- ns
(Note 4)
Rev. A3. Oct 2008©2008 Fairchild Semiconductor Corporation
Typical Characteristics
FQB27P06 / FQI27P06
10
10
, Drain Current [A]
D
-I
10
2
V
Top : - 15.0 V
- 10.0 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
1
Bottom : - 4.5 V
0
-1
10
GS
※
1. 250μs Pulse Test
2. T
0
10
-VDS, Drain-Source Voltage [V]
0.24
0.20
0.16
],
Ω
[
0.12
DS(on)
R
0.08
Drain-Source On-Resistance
0.04
0.00
0 10 20 30 40 50 60 70 80 90 100 110 120 130
VGS = - 10V
VGS = - 20V
-ID , Drain Curren t [A ]
Notes :
※
Note : T
2
10
1
10
℃
175
℃
25
0
10
, Drain Current [A]
D
-I
℃
= 25
C
1
10
-1
10
246810
℃
-55
※
Notes :
1. V
= -30V
DS
2. 250μs Pulse Test
-VGS , Gate-Source Voltage [V]
Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i st ics
※
Notes :
= 0V
1. V
GS
2. 250μs Pulse Test
= 25
J
2
10
1
10
0
10
℃
175
℃
, Reve rs e D ra in Current [A ]
℃
DR
-I
-1
10
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
25
-VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variati on vs .
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
3000
2500
2000
1500
1000
Capacitance [pF]
500
0
-1
10
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
gd
C
= C
rss
gd
C
oss
C
iss
C
rss
0
10
10
1
※
Notes :
1. V
= 0 V
GS
2. f = 1 MH z
12
10
8
6
4
, Gate-Source Voltage [V]
GS
2
-V
0
0 5 10 15 20 25 30 35
VDS, Drain-Source Voltage [V]
VDS = -30V
VDS = -48V
QG, Tota l Gate Charge [n C]
※
Note : I
= -27 A
D
Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristi cs
©2008 Fairchild Semiconductor Corporation Rev. A3. Oct 2008
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