Fairchild FQB22P10, FQI22P10 service manual
FQB22P10 / FQI22P10
FQB22P10 / FQI22P10
100V P-Chann el MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
D
GS
D2-PAK
FQB Series
GSD
October 2008
QFET
Features
• -22A, -100V, R
• Low gate charge ( typical 40 nC)
• Low Crss ( typical 160 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
RoHS Compliant
•
I2-PAK
FQI Series
= 0.125Ω @VGS = -10 V
DS(on)
G
D
S
®
Absolute Maximum Ratings T
= 25°C unless otherwise noted
C
Symbol Parameter FQB22P10 / FQI22P10 Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
Drain-Source Voltage -100 V
Drain Current
- Continuous (T
- Continuous (T
Drain Current - Pulsed
= 25°C)
C
= 100°C)
C
(Note 1)
-22 A
-15.6 A
-88 A
Gate-Source Voltage ±30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TA = 25°C) *
Power Dissipation (T
= 25°C)
C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
710 mJ
-22 A
12.5 mJ
-6.0 V/ns
3.75 W
125 W
- Derate above 25°C 0.83 W/°C
, T
T
J
STG
T
L
Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Thermal Charac teristics
Symbol Parameter Typ Max Units
R
θJC
R
θJA
R
θJA
* When mounted on the minimum pad size recommended (PCB Mount)
Thermal Resistance, Junction-to-Case -- 1.2 °C/W
Thermal Resistance, Junction-to-Ambient * -- 40 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
©2008 Fairchild Semiconductor Corporation
Rev. C1, Oct 2008
FQB22P10 / FQI22P10
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Te st Conditions Min Typ Max Units
Off Characteristics
BV
∆BV
/ ∆T
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
DSS
Breakdown Voltage Temperature
DSS
Coefficient
J
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
= 0 V, ID = -250 µA
GS
= -250 µA, Referenced to 25°C
I
D
V
= -100 V, VGS = 0 V
DS
= -80 V, TC = 125°C
V
DS
V
= -30 V, VDS = 0 V
GS
V
= 30 V, VDS = 0 V
GS
-100 -- -- V
-- -0.1 -- V/°C
-- -- -1 µA
-- -- -10 µA
-- -- -100 nA
-- -- 100 nA
On Characteristics
V
R
g
FS
GS(th)
DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
= VGS, ID = -250 µA
DS
= -10 V, ID = -11 A
V
GS
V
= -40 V, ID = -11 A
DS
(Note 4)
-2.0 -- -4.0 V
-- 0.096 0.125 Ω
-- 13.5 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance -- 460 600 pF
Reverse Transfer Capacitance -- 160 200 pF
= -25 V, VGS = 0 V,
V
DS
f = 1.0 MHz
-- 1170 1500 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time -- 170 350 ns
Turn-Off Delay Time -- 60 130 ns
Turn-Off Fall Time -- 110 230 ns
Total Gate Charge
Gate-Source Charge -- 7.0 -- nC
Gate-Drain Charge -- 21 -- nC
V
= -50 V, ID = -22 A,
DD
R
= 25 Ω
G
V
= -80 V, ID = -22 A,
DS
V
GS
= -10 V
(Note 4, 5)
(Note 4, 5)
-- 17 45 ns
-- 40 50 nC
Drain-So urce Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 2.2mH, IAS = -22A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ -22A, di/dt ≤ 300A/µs, VDD ≤ BV
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2008 Fairchild Semiconductor Corporation
Maximum Continuous Drain-Source Diode Forward Current -- -- -22 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- -88 A
V
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 0.6 -- µC
Starting TJ = 25°C
DSS,
= 0 V, IS = -22 A
GS
= 0 V, IS = -22 A,
V
GS
dI
/ dt = 100 A/µs
F
-- -- -4.0 V
-- 110 -- ns
(Note 4)
Rev. C1, Oct 2008
Typical Characteristics
FQB22P10 / FQI22P10
V
GS
Top : -1 5 .0 V
-10.0 V
-8.0 V
-7.0 V
-6.0 V
-5.5 V
-5.0 V
Bottom : -4.5 V
1
10
, Dra in Curre n t [A ]
D
-I
0
10
-1
10
0
10
※
Note s :
1. 250μs Pulse Test
℃
2. T
= 25
C
1
10
-VDS, Drain-Source Voltage [V]
Figure 1. On-Region Char act er i st ics
0.5
0.4
],
Ω
0.3
[
DS(on)
R
0.2
Drain-Source On-Resistance
0.1
0.0
0 102030405060708090100
VGS = - 10V
VGS = - 20V
-ID , Drain Current [A]
※
Note : T
= 25
J
1
10
℃
175
℃
25
0
10
, Drain Current [A]
D
-I
-1
10
246810
℃
-55
※
Notes :
= -40V
1. V
DS
2. 250μs Pulse Test
-VGS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
Figure 2. Transfer Characteristics
1
10
0
10
, Reverse Drain Current [A]
DR
-I
℃
10
℃
175
℃
25
-1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
-VSD , So u rc e- D ra in V o ltag e [V ]
※
Note s :
= 0V
1. V
GS
2. 250μs Pulse Te st
Figure 3. On-Resistance Variati on vs .
Drain Current and Gate Voltage
3500
3000
2500
2000
1500
Capacitance [pF]
1000
500
0
10
C
iss
C
oss
C
rss
-1
Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics
©2008 Fairchild Semiconductor Corporation
C
C
C
0
10
-VDS, Drain-Source Voltage [V]
= Cgs + Cgd (Cds = shorted)
iss
= Cds + C
oss
gd
= C
rss
gd
※
Note s :
1. V
GS
2. f = 1 MHz
1
10
= 0 V
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
VDS = -20V
VDS = -50V
VDS = -80V
※
Note : I
= -22 A
D
Rev. C1, Oct 2008
12
10
8
6
4
, Gate-Source Voltage [V]
GS
2
-V
0
01020304050
QG, Tota l Gate Charge [n C]
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