Fairchild FQB19N20C, FQI19N20C service manual

FQB19N20C/FQI19N20C

FQB19N20C/FQI19N20C

200V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.

D

GS

D2-PAK

FQB Series

GSD

Features

• 19.0A, 200V, R

• Low gate charge ( typical 40.5 nC)

• Low Crss ( typical 85 pF)

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• RoHS Compliant

I2-PAK

FQI Series

= 0.17Ω @VGS = 10 V

DS(on)

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G

October 2008

QFET

D

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Absolute Maximum Ratings T

= 25°C unless otherwise noted

C

Symbol Parameter FQB19N20C / FQI19N20C Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt

P

D

Drain-Source Voltage 200 V

Drain Current

- Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

19.0 A

12.1 A

76.0 A

Gate-Source Voltage ± 30 V

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Power Dissipation (TA = 25°C)*

Power Dissipation (T

= 25°C)

C

(Note 2)

(Note 1)

(Note 1)

(Note 3)

433 mJ

19.0 A

13.9 mJ

5.5 V/ns

3.13 W

139 W

- Derate above 25°C 1.11 W/°C

, T

T

J

STG

T

L

Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

R

θJA

* When mounted on the minimum pad size recommended (PCB Mount)

Thermal Resistance, Junction-to-Case -- 0.9 °C/W

Thermal Resistance, Junction-to-Ambient* -- 40 °C/W

Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

©2008 Fairchild Semiconductor Corporation Rev. A1, Oct 2008

FQB19N20C/FQI19N20C

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T

I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature
Coefficient

J

Zero Gate Voltage Drain Current

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

= 250 µA, Referenced to 25°C

I

D

= 200 V, VGS = 0 V

V

DS

= 160 V, TC = 125°C

V

DS

V

= 30 V, VDS = 0 V

GS

= -30 V, VDS = 0 V

V

GS

200 -- -- V

-- 0.24 -- V/°C

-- -- 10 µA

-- -- 100 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage

Static Drain-Source
On-Resistance

Forward Transconductance

= VGS, ID = 250 µA

V

DS

= 10 V, ID = 9.5 A

V

GS

V

= 40 V, ID = 9.5 A (Not e 4)

DS

2.0 -- 4.0 V

-- 0.14 0.17 Ω

-- 10.8 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance

Output Capacitance -- 195 255 pF

Reverse Transfer Capacitance -- 85 110 pF

V

= 25 V, VGS = 0 V,

DS

f = 1.0 MHz

-- 830 1080 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Q

Q

g

gs

gd

Turn-On Delay Time

Turn-On Rise Time -- 150 310 ns

Turn-Off Delay Time -- 135 280 ns

Turn-Off Fall Time -- 115 240 ns

Total Gate Charge

Gate-Source Charge -- 6.0 -- nC

Gate-Drain Charge -- 22.5 -- nC

V

= 100 V, ID = 19.0 A,

DD

= 25 Ω

R

G

(N ote 4, 5)

V

= 160 V, ID = 19.0 A,

DS

V

= 10 V

GS

(N ote 4, 5)

-- 15 40 ns

-- 40.5 53.0 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 1.8mH, I

3. I

≤ 19.0A, di/dt ≤ 300A/µs, VDD ≤ BV

SD

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2008 Fairchild Semiconductor Corporation

Maximum Continuous Drain-Source Diode Forward Current -- -- 19.0 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- 76.0 A

= 0 V, IS = 19.0 A

Drain-Source Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge -- 1.63 -- µC

= 19.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

AS

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 19.0 A,

V

GS

dI

/ dt = 100 A/µs (Not e 4)

F

-- -- 1.5 V

-- 208 -- ns

Rev. A1, Oct 2008

Typical Characteristics

FQB19N20C/FQI19N20C

V

GS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

1

10

5.0 V
Bottom : 4.5 V

, Drain Current [A]

D

I

0

10

-1

10

0

10

Notes :※

1. 250µ s Pulse Test

= 25℃

2. T

C

1

10

VDS, Drain-Source Volt age [V]

0.8

0.6

[Ω ],

0.4

DS(ON)

R

0.2

VGS = 10V

VGS = 20V

Drain-Source On-Resistance

Note : T※J = 25℃

0.0
0 102030405060

ID, Drain Current [A]

1

10

150oC

25oC

0

10

, Drain Current [A]

D

I

-1

10

246810

-55oC

Notes :※

1. VDS = 40V

2. 250µ s Pulse Tes t

VGS, Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

1

10

0

10

, Reverse Drain Current [A]

DR

I

-1

10

0.0 0.4 0.8 1.2 1.6 2. 0 2.4

150℃

25℃

Notes :※

1. VGS = 0V

2. 250µ s Pulse Test

VSD, Source-Drai n voltage [ V]

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

3000

2500

2000

1500

1000

Capacitance [pF]

Notes :※

500

1. VGS = 0 V

2. f = 1 MHz

0

-1

10

VDS, Drain-Source Voltage [V]

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

C

iss

C

oss

C

rss

0

10

1

10

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 1020304050

QG, Total Gate Charge [nC]

VDS = 40V

VDS = 100V

VDS = 160V

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Note : I※D = 19.0A

Rev. A1, Oct 2008©2008 Fairchild Semiconductor Corporation