Fairchild FQB13N50C, FQI13N50C service manual

FQB13N50C/FQI13N50C

FQB13N50C/FQI13N50C

500V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.

D

GS

D2-PAK

FQB Series

GSD

Features

• 13A, 500V, R

• Low gate charge ( typical 43nC)

• Low Crss ( typical 20pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

RoHS Compliant

•

I2-PAK

FQI Series

= 0.48Ω @VGS = 10 V

DS(on)

G

!

!

October 2008

QFET

D

!

!

"

"

"

"

!

!

"

"
"

"

!

!

S

®

Absolute Maximum Ratings T

= 25°C unless otherwise noted

C

Symbol Parameter FQB13N50C / FQI13N50C Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

Drain-Source Voltage 500 V
Drain Current

- Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

13 A

8A

52 A
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

860 mJ

13 A

19.5 mJ

4.5 V/ns

195 W

- Derate above 25°C 1.56 W/°C

, T

T

J

STG

T

L

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300 °C

Thermal Charac teristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

R

θJA

* When mounted on the minium pad size recommended (PCB Mount).

Thermal Resistance, Junction-to-Case -- 0.64 °C/W
Thermal Resistance, Junction-to-Ambient * -- 40 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

©2008 Fairchild Semiconductor Corporation Rev. A1, October 2008

FQB13N50C/FQI13N50C

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter T e s t Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

V

= 0 V, ID = 250 µA

GS

= 250 µA, Referenced to 25°C

I

D

V

= 500 V, VGS = 0 V

DS

= 400 V, TC = 125°C

V

DS

V

= 30 V, VDS = 0 V

GS

V

= -30 V, VDS = 0 V

GS

500 -- -- V

-- 0.5 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V, ID = 6.5 A

V

GS

V

= 40 V, ID = 6.5 A

DS

(Note 4)

2.0 -- 4.0 V

-- 0.39 0.48 Ω

-- 15 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 180 235 pF
Reverse Transfer Capacitance -- 20 25 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 1580 2055 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 100 210 ns
Turn-Off Delay Time -- 130 270 ns
Turn-Off Fall Time -- 100 21 0 n s
Total Gate Charge
Gate-Source Charge -- 7.5 -- nC
Gate-Drain Charge -- 18.5 -- nC

V

= 250 V, ID = 13 A,

DD

R

= 25 Ω

G

(Note 4, 5)

V

= 400 V, ID = 13 A,

DS

V

GS

(Note 4, 5)

= 10 V

-- 25 60 ns

-- 43 56 nC

Drain-So urce Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L =6.0 mH, IAS = 13A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 13A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Maximum Continuous Drain-Source Diode Forward Current -- -- 13 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 52 A

V

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 4.5 -- µC

Starting TJ = 25°C

DSS,

= 0 V, IS = 13 A

GS

= 0 V, IS = 13 A,

V

GS

dI

/ dt = 100 A/µs

F

(Note 4)

-- -- 1.4 V

-- 410 -- ns

Rev. A1, October 2008©2008 Fairchild Semiconductor Corporation

Typical Characteristics

FQB13N50C/FQI13N50C

V

GS

Top : 1 5.0 V

10.0 V

8.0 V

7.0 V

6.0 V

1

10

5.5 V

5.0 V
Bottom : 4 .5 V

0

10

, Drain Current [A]

D

I

-1

10

-1

10

0

10

VDS, Drain-Source Voltage [V]

1.5

VGS = 10V

],

$

[

1.0

DS(ON)

R

Drain-Source On-Resistance

0.5

0 5 10 15 20 25 30 35

ID, Drain Current [A]

"

Note s :

1. 250#s Pulse Tes t

!

= 25

2. T

C

1

10

"

No te : T

VGS = 20V

= 25

J

1

10

150oC

25oC

0

10

, Dra in C u r re n t [A ]

D

I

-1

10

246810

-55oC

"

Note s :

= 40V

1. V

DS

2. 250#s Pulse Test

VGS, Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i st ics

1

10

0

10

!

, Reverse Drain Current [A]

DR

!

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4

150

!

25

"

Note s :

= 0V

1. V

GS

2. 250#s Pulse Te st

VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

3000

2500

2000

1500

1000

Capacitance [pF]

500

0

-1

10

C

iss

C

oss

C

rss

0

10

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

"

Notes ;

1. V

2. f = 1 MHz

1

10

= 0 V

GS

12

10

8

6

4

, Gate-Source Voltage [V]

GS

2

V

0

0 1020304050

VDS, Drain-Source Voltage [V]

VDS = 100V

VDS = 250V

VDS = 400V

QG, Tota l G a te Cha rg e [n C ]

"

Note : I

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

D

= 13A

Rev. A1, October 2008©2008 Fairchild Semiconductor Corporation