Fairchild FQAF33N10L service manual

现货库存、技术资料、百科信息、热点资讯，精彩尽在鼎好!

FQAF33N10L

FQAF33N10L

100V LOGIC N-Channel MOSFET

September 2000

QFET

QFET

QFETQFET

TM

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as high efficiency
switching DC/DC converters, and DC motor control.

G

SD

Absolute Maximum Ratings T

Symbol Parameter FQAF33N10L Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

T

, T

J

STG

T

L

Drain-Source Voltage 100 V
Drain Current

Drain Current - Pulsed
Gate-Source Voltage ± 20 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

- Continuous (T

- Continuous (T

- Derate above 25°C 0.56 W/°C

TO-3PF

FQAF Series

= 25°C unless otherwise noted

C

= 25°C)

C

= 100°C)

C

Features

• 25.8A, 100V, R

• Low gate charge ( typical 30 nC)

• Low Crss ( typical 70 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

(Note 1)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

= 0.052Ω @VGS = 10 V

DS(on)

D

!

!

"

"

"

"

!

!

"

!

!

G

"
"

"

!

!

S

25.8 A

18.2 A

103.2 A

430 mJ

25.8 A

8.3 mJ

6.0 V/ns
83 W

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

©2000 Fairchild Semiconductor International

Thermal Resistance, Junction-to-Case -- 1.8 °C/W
Thermal Resistance, Junction-to-Ambient -- 40 °C/W

Rev. A, September 2000

FQAF33N10L

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 100 V, VGS = 0 V

DS

V

= 80 V, TC = 150°C

DS

V

= 20 V, VDS = 0 V

GS

= -20 V, VDS = 0 V

V

GS

100 -- -- V

-- 0.09 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

V

= 10 V, ID = 12.9 A

GS

= 5 V, ID = 12.9 A

V

GS

V

= 30 V, ID = 12.9 A

DS

(Note 4)

1.0 -- 2.0 V

0.039

--

0.043

0.052

0.055

-- 25 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 305 400 pF
Reverse Transfer Capacitance -- 70 90 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 1250 163 0 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 470 950 ns
Turn-Off Delay Time -- 70 150 ns
Turn-Off Fall Time -- 120 25 0 n s
Total Gate Charge
Gate-Source Charge -- 4.7 -- nC
Gate-Drain Charge -- 16 -- nC

= 50 V, ID = 33 A,

V

DD

= 25 Ω

R

G

= 80 V, ID = 33 A,

V

DS

V

GS

= 5 V

(Note 4, 5)

(Note 4, 5)

-- 17 45 ns

-- 30 40 nC

Ω

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 0.97mH, IAS = 33A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 33A, di/dt ≤ 300A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2000 Fairchild Semiconductor International

Maximum Continuous Drain-Source Diode Forward Current -- -- 25.8 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 103.2 A

= 0 V, IS = 25.8 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 0.26 -- µC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 33 A,

V

GS

/ dt = 100 A/µs

dI

F

(Note 6)

(Note 4)

-- -- 1.5 V

-- 90 -- ns

Rev. A, September 2000

Typical Characteristics

FQAF33N10L

10

10

, Drain Current [A]

D

I

10

2

V
Top : 10.0 V

8.0 V

6.0 V

5.0 V

4.5 V

4.0 V

3.5 V
Bottom : 3.0 V

1

0

-1

10

GS

※

Notes :

1. 250μs Pulse Test

℃

= 25

2. T

C

0

10

1

10

VDS, Drai n -Source Voltag e [V]

0.20

0.16

0.12

],

Ω

[

0.08

DS(ON)

R

0.04

Drain-Source On-Resistance

0.00
0306090120

VGS = 5V

VGS = 10V

※

Note : T

℃

= 25

J

ID, Dra i n Current [A]

2

10

1

10

℃

175

℃

25

0

10

, Drain Current [A]

D

I

-1

10

0246810

-55

℃

※

Notes :

1. V

= 30V

DS

2. 250μs Pulse Test

VGS, Gate-Source V oltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

2

10

1

10

0

10

℃

175

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

℃

25

VSD, Sou r c e-Drain voltage [V]

※

Notes :

= 0V

1. V

GS

2. 250μs Pulse Test

Figure 3. On-Resistance Variati on vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

VDS = 80V

VDS = 50V

※

Note : I

3600

3000

2400

1800

1200

Capacitance [pF]

600

0

-1

10

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

※

10

1

Notes :

= 0 V

1. V

GS

2. f = 1 MHz

C

iss

C

oss

C

rss

0

10

VDS, Drain-Source Voltage [V]

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

01020304050

QG, Tota l Gate Charge [n C]

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics

D

= 33A

Rev. A, September 2000©2000 Fairchild Semiconductor International