Fairchild FQAF22P10 service manual

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FQAF22P10

100V P-Channel MOSFET

FQAF22P10

TM

QFET

General Description

These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.

GSD

Absolute Maximum Ratings T

Symbol Parameter FQAF22P10 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

T

, T

J

STG

T

L

Drain-Source Voltage -100 V
Drain Current

Drain Current - Pulsed
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

- Continuous (T

- Continuous (T

- Derate above 25°C 0.48 W/°C

TO-3PF

FQAF Series

= 25°C unless otherwise noted

C

= 25°C)

C

= 100°C)

C

Features

• -16.6A, -100V, R

• Low gate charge ( typically 40 nC)

• Low Crss ( typically 160 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

G

(Note 1)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

= 0.125Ω @VGS = -10 V

DS(on)

D

S

-16.6 A

-11.7 A

-66.4 A

710 mJ

-16.6 A

7.0 mJ

-6.0 V/ns
70 W

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

©2002 Fairchild Semiconductor Corporation

Thermal Resistance, Junction-to-Case -- 2.1 °C/W
Thermal Resistance, Junction-to-Ambient -- 40 °C/W

Rev. B, August 2002

FQAF22P10

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Te st Conditions Min Typ Max Units

Off Characteristics

BV
∆BV
/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = -250 µA

V

GS

I

= -250 µA, Referenced to 25°C

D

V

= -100 V, VGS = 0 V

DS

V

= -80 V, TC = 125°C

DS

V

= -30 V, VDS = 0 V

GS

= 30 V, VDS = 0 V

V

GS

-100 -- -- V

-- -0.1 -- V/°C

-- -- -1 µA

-- -- -10 µA

-- -- -100 nA

-- -- 100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = -250 µA

DS

= -10 V, ID = -8.3 A

V

GS

= -40 V, ID = -8.3 A

V

DS

(Note 4)

-2.0 -- -4.0 V

-- 0.096 0.125 Ω

-- 12 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 460 600 pF
Reverse Transfer Capacitance -- 160 200 pF

= -25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 1170 1500 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 170 350 ns
Turn-Off Delay Time -- 60 130 ns
Turn-Off Fall Time -- 110 230 ns
Total Gate Charge
Gate-Source Charge -- 7.0 -- nC
Gate-Drain Charge -- 21 -- nC

= -50 V, ID = -22 A,

V

DD

= 25 Ω

R

G

V

= -80 V, ID = -22 A,

DS

V

GS

= -10 V

(Note 4, 5)

(Note 4, 5)

-- 17 45 ns

-- 40 50 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 3.85mH, IAS = -16.6A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ -22A, di/dt ≤ 300A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2002 Fairchild Semiconductor Corporation

Maximum Continuous Drain-Source Diode Forward Current -- -- -16.6 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- -66.4 A

= 0 V, IS = -16.6 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 0.6 -- µC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = -22 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- -4.0 V

-- 110 -- ns

(Note 4)

Rev. B, August 2002

Typical Characteristics

FQAF22P10

V

GS

Top : -1 5 .0 V

-10.0 V

-8.0 V

-7.0 V

-6.0 V

-5.5 V

-5.0 V

1

Bottom : -4.5 V

10

, Dra in Curre n t [A ]

D

-I

0

10

-1

10

0

10

※

Note s :

1. 250μs Pulse Test

2. T

= 25

C

1

10

-VDS, Drain-Source Voltage [V]

0.5

0.4

],

Ω

0.3

[

DS(on)

R

0.2

Drain-Source On-Resistance

0.1

0.0
0 102030405060708090100

VGS = - 10V

VGS = - 20V

※

Note : T

-ID , Drai n Curren t [A]

1

10

℃

175

℃

25

0

10

, Drain Current [A]

D

-I

℃

-1

10

246810

℃

-55

※

Notes :

= -40V

1. V

DS

2. 250μs Pulse Test

-VGS , Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

1

10

0

10

, Reverse Drain Current [A]

DR

℃

= 25

J

-I

10

℃

175

℃

25

※

Note s :

= 0V

1. V

GS

2. 250μs Pulse Te st

-1

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6

-VSD , So u rc e- D ra in V o ltag e [V ]

Figure 3. On-Resistance Variati on vs.

Drain Current and Gate Voltage

3500

3000

2500

2000

1500

Capacitance [pF]

1000

500

0

10

C

iss

C

oss

C

rss

-1

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics

©2002 Fairchild Semiconductor Corporation

C
C
C

0

10

-VDS, Drain-Source Voltage [V]

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

oss

gd

= C

rss

gd

※

Note s :

1. V

GS

2. f = 1 MHz

1

10

= 0 V

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

VDS = -20V

VDS = -50V

VDS = -80V

※

Note : I

= -22 A

D

Rev. B, August 2002

12

10

8

6

4

, Gate-Source Voltage [V]

GS

2

-V

0

01020304050

QG, Tota l Gate Charge [n C]