Fairchild FQAF19N60 service manual

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FQAF19N60

FQAF19N60

600V N-Channel MOSFET

April 2000

QFET

QFET

QFETQFET

TM

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.

G

SD

Absolute Maximum Ratings

Symbol Parameter FQAF19N60 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

T

, T

J

STG

T

L

Drain-Source Voltage 600 V
Drain Current

Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds

- Continuous (T

- Continuous (T

- Derate above 25°C 0.96 W/°C

TO-3PF

FQAF Series



TC = 25°C unless otherwise noted

= 25°C)

C

= 100°C)

C

Features

• 11.2A, 600V, R

• Low gate charge ( typical 70 nC)

• Low Crss ( typical 35 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

G

!

!

(Note 1)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

= 0.38 Ω @ VGS = 10 V

DS(on)

D

!

!

"

"

"

"

!

!

"

"
"

"

!

!

S

11.2 A

7.0 A

44.8 A

±

30 V

1150 mJ

11.2 A
12 mJ

4.5

120 W

300 °C

Vns

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θ

JC

R

θ

JA

©2000 Fairchild Semiconductor International

Thermal Resistance, Junction-to-Case -- 1.04 °CW
Thermal Resistance, Junction-to-Ambient -- 40 °CW

Rev. A, April 2000

FQAF19N60

Electrical Characteristics



TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

∆

BV
/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

= 250 µA, Referenced to 25°C

I

D

V

= 600 V, VGS = 0 V

DS

V

= 480 V, TC = 125°C

DS

= 30 V, VDS = 0 V

V

GS

V

= -30 V, VDS = 0 V

GS

600 -- -- V

-- 0.65 -- V/°C

-- -- 10

-- -- 100

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

= VGS, ID = 250 µA

V

DS

= 10 V, ID = 5.6 A

V

GS

= 50 V, ID = 5.6 A

V

DS

(Note 4)

3.0 -- 5.0 V

-- 0.3 0.38

-- 12 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 350 450 pF
Reverse Transfer Capacitance -- 35 45 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 2800 3600 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 210 430 ns
Turn-Off Delay Time -- 150 310 n s
Turn-Off Fall Time -- 135 28 0 n s
Total Gate Charge
Gate-Source Charge -- 17 -- nC
Gate-Drain Charge -- 33 -- nC

= 300 V, ID = 18.5 A,

V

DD

Ω

= 25

R

G

V

= 480 V, ID = 18.5 A,

DS

V

GS

= 10 V

(Note 4, 5)

(Note 4, 5)

-- 65 140 ns

-- 70 90 nC

µ

A

µ

A

Ω

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 16.8mH, I

3. ISD  18.5A, di/dt  200A/µs, VDD  BV

4. Pulse Test : Pulse width 300µs, Duty cycle 2%

5. Essentially independent of operating temperature

©2000 Fairchild Semiconductor International

Maximum Continuous Drain-Source Diode Forward Current -- -- 11.2 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 44.8 A

= 0 V, IS = 11.2 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 4.7 --

= 11.2A, VDD = 50V, RG = 25

AS

Ω,

Starting TJ = 25°C

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 18.5 A,

V

GS

/ dt = 100 A/µs

dI

F

(Note 4)

-- -- 1.4 V

-- 420 -- ns

µ

Rev. A, April 2000

C

Typical Characteristics

V

GS

Top : 1 5 V

1

10

0

, Dra in Curre n t [A]

D

10

I

10

10 V

8.0 V

7.0 V

6.5 V

6.0 V
Bottom : 5.5 V

-1

0

10

VDS , Drain -S o u rce V o ltag e [V ]



Note s :

1. 250s Pulse Test



= 25

2. T

C

1

10

1

10



0

10

, Drain Current [A]

D

I

-1

10

246810

150



25

VGS , Gate-Source Voltage [V]

FQAF19N60



-55



Notes :

= 50V

1. V

DS

2. 250s Pulse Test

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

1.2

1.0

0.8

],



[

0.6

DS(ON)

R

0.4

Drain-Source On-Resistance

0.2

0.0
0 10203040506070

VGS = 20V

VGS = 10V



Note : T

ID, Dra i n Current [A ]

1

10

0

10

, Reverse Drain Current [A]

DR

I



= 25

J

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6



150

25

VSD , Source-Drain Voltage [V]





Note s :

= 0V

1. V

GS

2. 250s Pulse Test

Figure 3. On-Resistan ce Vari ation vs.

Drain Current and Gate Voltage

5000

4000

3000

2000

Capacitance [pF]

1000

0

-1

10

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Ch a ra ct eristics

©2000 Fairchild Semiconductor International

C

iss

C

oss

C

rss

0

10

VDS, Drain-Source Voltage [V]

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

gd



Note s :

1. V

2. f = 1 MHz

1

10

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current and

Temperature

12

10

8

= 0 V

GS

6

4

, Gate-Source Voltage [V]

2

GS

V

0

01530456075

QG, Tota l Gate Charg e [nC]

VDS = 120V

VDS = 300V

VDS = 480V



Note : I

= 18.5 A

D

Rev. A, April 2000