Fairchild FQAF17P10 service manual

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FQAF17P10

100V P-Channel MOSFET

FQAF17P10

TM

QFET

General Description

These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.

GSD

Absolute Maximum Ratings T

Symbol Parameter FQAF17P10 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

T

, T

J

STG

T

L

Drain-Source Voltage -100 V
Drain Current

Drain Current - Pulsed
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

- Continuous (T

- Continuous (T

- Derate above 25°C 0.37 W/°C

TO-3PF

FQAF Series

= 25°C unless otherwise noted

C

= 25°C)

C

= 100°C)

C

Features

• -12.4A, -100V, R

• Low gate charge ( typical 30 nC)

• Low Crss ( typical 100 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

(Note 1)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

= 0.19Ω @VGS = -10 V

DS(on)

D

G

S

-12.4 A

-8.8 A

-49.6 A

580 mJ

-12.4 A

5.6 mJ

-6.0 V/ns
56 W

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

©2002 Fairchild Semiconductor Corporation

Thermal Resistance, Junction-to-Case -- 2.68 °C/W
Thermal Resistance, Junction-to-Ambient -- 40 °C/W

Rev. B, August 2002

FQAF17P10

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Te st Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = -250 µA

V

GS

I

= -250 µA, Referenced to 25°C

D

V

= -100 V, VGS = 0 V

DS

V

= -80 V, TC = 150°C

DS

V

= -30 V, VDS = 0 V

GS

= 30 V, VDS = 0 V

V

GS

-100 -- -- V

-- -0.1 -- V/°C

-- -- -1 µA

-- -- -10 µA

-- -- -100 nA

-- -- 100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = -250 µA

DS

= -10 V, ID = -6.2 A

V

GS

= -40 V, ID = -6.2 A

V

DS

(Note 4)

-2.0 -- -4.0 V

-- 0.14 0.19 Ω

-- 8.9 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 310 400 pF
Reverse Transfer Capacitance -- 100 130 pF

= -25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 850 1100 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 200 410 ns
Turn-Off Delay Time -- 45 100 ns
Turn-Off Fall Time -- 100 210 ns
Total Gate Charge
Gate-Source Charge -- 4.8 -- nC
Gate-Drain Charge -- 17 -- nC

= -50 V, ID = -16.5 A,

V

DD

= 25 Ω

R

G

V

= -80 V, ID = -16.5 A,

DS

V

GS

= -10 V

(Note 4, 5)

(Note 4, 5)

-- 17 45 ns

-- 30 39 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 5.7mH, IAS = -12.4A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ -16.5A, di/dt ≤ 300A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2002 Fairchild Semiconductor Corporation

Maximum Continuous Drain-Source Diode Forward Current -- -- -12.4 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- -49.6 A

= 0 V, IS = -12.4 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 0.52 -- µC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = -16.5 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- -4.0 V

-- 120 -- ns

(Note 4)

Rev. B, August 2002

Typical Characteristics

V

GS

Top : -15.0 V

-10.0 V

-8.0 V

-7.0 V

1

10

-6.5 V

-5.5 V

-5.0 V
Botto m : -4.5 V

0

10

, Drain Current [A]

D

-I

-1

10

-1

10

0

10

-VDS, Drain-Source Voltage [V]

※

Notes :

1. 250μs Pulse Test

℃

= 25

2. T

C

1

10

FQAF17P10

1

10

℃

175

0

10

℃

25

, Drain Current [A]

D

-I

-1

10

246810

℃

-55

※

Notes :

1. V

= -40V

DS

2. 250μs Pulse Test

-VGS , Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

0.7

0.6

0.5

],

Ω

0.4

[

DS(on)

0.3

R

VGS = - 10V

VGS = - 20V

0.2

Drain-Source On-Resistance

0.1

0.0
0 20406080

※

Note : T

℃

= 25

J

-ID , Drai n Curren t [A]

Figure 3. On-Resistance Variati on vs.

Drain Current and Gate Voltage

2200
2000
1800
1600
1400
1200
1000

800

Capacitance [pF]

600
400
200

0

-1

10

C

oss

C

iss

C

rss

VDS, Drain-Source Voltage [V]

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

※

Notes :

= 0 V

1. V

GS

2. f = 1 MHz

0

10

1

10

1

10

0

10

℃

25

℃

175

, Reve rs e D ra in Current [A ]

DR

-I

-1

10

0.0 0.5 1.0 1.5 2.0 2.5 3.0

※

Notes :

= 0V

1. V

GS

2. 250μs Pulse Test

-VSD , Source-Drain Voltage [V]

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

VDS = -50V

VDS = -80V

VDS = -20V

※

Note : I

= -16.5 A

D

12

10

8

6

4

, Gate-Source Voltage [V]

GS

2

-V

0

0 5 10 15 20 25 30 35

QG, Tota l Gate Charge [n C]

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics

©2002 Fairchild Semiconductor Corporation

Rev. B, August 2002